This paper studies ferromagnetic films with strong uniaxial easy-plane anisotropy and proves that paired nanoscale perforations in such films can be used as memory cells for recording and storing data in a ternary number system. The problem of reading the state of cells of this type is examined, and an approach to its solution is proposed, which consists of measuring the system’s response to a picosecond pulse of an external magnetic field. The parameters of the system at which the magnitude of this response is maximal are obtained, and estimates of this value are made using both analytical and numerical methods.

The effectiveness of the implementation of the quantum Fourier transform (QFT) and the Grover algorithm on qudit systems is investigated. A comparative analysis of computing resources for quantum states of N ≥ 1024 dimension is carried out. It is shown that using qudits can significantly reduce the number of quantum operations in Grover’s algorithm compared to its qubit counterparts, while for QFT the main advantage is to reduce the number of physical carriers. The effect of noise using the Monte Carlo method on the accuracy of algorithms for qubit systems of various dimensions is analyzed.

This paper presents the design procedure of subbandgap voltage reference intended for energy harvesting systems. The circuit provides a stable nominal output voltage of 1 V, cross supply voltage range from 1.4 to 2.5 V. The best achieved temperature coefficient is 35 ppm/°C, with an average value of 48 ppm/°C over 12 samples Vdd. The designed circuit exhibits strong immunity against supply voltage fluctuation and good overall stability, with an average power supply rejection ratio of 54 dB. Implemented in 65 nm CMOS technology, the circuit occupies an area of 280 × 213 µm2 and consumes an average current of 32 µA under supply voltage range from 1.4 to 2.5 V.

This work presents a comprehensive study of planar ITO/TiO2/graphene/polyethylene terephthalate memristive nanostructures for neuromorphic computing applications. We introduce a novel three-terminal memristor device featuring a graphene gate electrode for active control of resistive switching behavior. Through multiphysics modeling using COMSOL Multiphysics, we demonstrate precise control over conductive filament morphology and switching dynamics via gate potential modulation (–5 to +5 V). The developed mathematical model incorporates oxygen vacancy generation, migration, and recombination processes, accurately describing the memristive behavior observed in practical device structures. Parameter variation studies were conducted for TiO2 layer thickness (2–10 nm) and top interelectrode spacing (3–30 nm). Three distinct operational modes were identified: conductance suppression under positive graphene gate potential (1.3–2.6-fold current reduction), filament reorientation under negative gate bias (4–8 orders of magnitude current decrease), and shunting mode at zero gate potential. These findings validate the proposed architecture as a promising platform for energy-efficient neuromorphic systems, artificial intelligence hardware, and in-memory computing applications, potentially enabling significant improvements in neural network computational efficiency. The material combination employed in the memristor structure demonstrates potential for developing transparent and flexible electronics for next-generation computing systems.

The influence of plasma-enhanced atomic layer deposition (PEALD) process parameters on ruthenium layers using the organometallic precursor Ru(EtCp)2 and oxygen plasma was studied. Ruthenium oxide was shown to deposit at sample temperatures below 325°C. Metallic ruthenium was deposited in the 375–400°C range. Conformal ruthenium deposition in grooves with an aspect ratio of 3–5 was demonstrated. The influence of oxygen plasma treatment duration during PEALD was also studied. The results of studies on the possibilities of anisotropic nanoscale plasma etching of ruthenium film samples with the formation of conductors with cross-sectional dimensions of less than 30 × 30 nm are also presented.

The milestone of the correct simulation of a single electron is to exclude its action upon itself. Only the field created by the environment should be involved into the evolution equation. Two different approaches to cope with the problem are discussed, outlining their advantages and drawbacks. The first strategy is based on the response of environment to the fictitious charge density e|ψ|2 (ψ is a wave-function). This is a fundamental of the theory of polaron. The second strategy is based on the response of environment to a point charge. This approach completely denies an existence of polarons. We propose an experiment with quantum oscillations in a double quantum dot to distinguish what approach is true. The related problem of how to keep only one electron in a dot for fairly long time and distinguish whether the dot is occupied or empty is also regarded and the relevant conditions are derived.

The paper discusses the design and modeling of a TSV-inductor for integration into an interleaved boost converter. The inductor features a topology of vertical TSV connected to rectangular horizontal connections, considering all parasitic effects from the various physical elements in the TSV-inductor. Using MATLAB software, different materials used in the TSV components are explored to enhance inductance values and quality factors, aiming to reduce energy losses. Validation of calculated electrical parameters from physical parameters and materials is done using TINA software through simulation of the interleaved boost converter circuit with the electrical circuit equivalent representation of the TSV-inductor.

The results of the study of the influence of thermal annealing on the formation of ohmic contacts of aluminum-silicon and aluminum-polysilicon at the stage of manufacturing modern integrated circuits (ICs) are presented. It is established that standard thermal annealing at a temperature of 450°C for 20 min in nitrogen leads to both the dissolution of silicon in aluminum contacts with the subsequent formation of recrystallized islands of p-type silicon at the aluminum–silicon interface, and to the dissolution of polysilicon, with its subsequent precipitation in the form of sharp-angled conglomerates. When using rapid thermal annealing (Tmax = 450°C, 7 s, N2), the formation of such conglomerates is not detected. The dissolution of polysilicon (silicon) in aluminum during the formation of aluminum–polysilicon (aluminum–silicon) ohmic contacts leads to a change in the value of the contact resistance of polysilicon resistors and the current–voltage (I–V) characteristics of bipolar transistors.

The issues of creating resists in Russia for electron-beam and ion-beam lithography processes are considered. The manufactured positive resists based on polymethyl methacrylate allow the creation of nanosized structures. Moreover, the possibility of using a combination of the created resists as two-layer resists is demonstrated. The prospects for the development of domestic processes of electron-beam and ion-beam lithography are also demonstrated. At present, technological processes of electron-beam and ion-beam lithography in Russia are at the demonstrator stage. In the near future, domestic installations for electron-beam and ion-beam lithography will be developed. It will take significantly more time to organize the production of ion-beam lithography installations in Russia.

This review studies the structure of thin films of titanium nitride formed by magnetron sputtering. A model of film growth depending on the deposition temperature and nitrogen flow is considered. The model is compared with the experimental results. The effect of annealing on the structure of magnetron titanium nitride films is described.