- Research Article
- 10.54254/2753-8818/2026.33647
Design Status and Loss Mechanisms of AlGaN Deep-Ultraviolet VCSELs
- May 18, 2026
- Theoretical and Natural Science
- Fengzhou Li
Vertical-Cavity Surface-Emitting Lasers (VCSELs) based on Aluminum Gallium Nitride (AlGaN) structures for Deep Ultraviolet (DUV) emission have great potential for use in sterilizers, photolithography, and solar-blind detectors. Unfortunately, the creation of high performance Ultraviolet C (UVC) VCSELs has been hampered by both physical and structural problems that make them difficult to manufacture. In this paper, I examine the design status of DUV VCSELs based upon AlGaN and identify the factors affecting their performance; specifically, they have reduced internal quantum efficiency in Quantum Wells, poor mirror reflectivity, as well as loss of light due to absorption and scattering, occurring within the microcavity. Device design factors that will either limit or benefit VCSEL designs include: AlGaN Multiple Quantum Wells, Distributed Bragg Reflectors and the Microcavity Structure. Other factors relating to minimizing optical losses with fabrication processes will also be discussed in this paper, including substrate removal, Chemical Mechanical Polishing and Surface Smoothing. A review of the most recent UVC (~275-278 nm) and Ultraviolet B (UVB) (~310 nm) device demonstrations will be used to illustrate existing performance deficiencies as well as the disparities between optically pumped and electrically driven devices. Finally, future areas of research are proposed which include: polarization engineering, control of cavity detuning, development of low loss dielectric mirrors compatible with current injection devices and improvements in P-type conductivity using tunneling injection techniques.
Read more