- Research Article
- 10.1109/led.2025.3636677
Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10 <sup>4</sup>
- Feb 01, 2026
- IEEE Electron Device Letters
- James Spencer Lundh + 17 more +17
We report 850 °C operation of ultrawide bandgap (UWBG) Al-rich Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.68</sub>Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.32</sub>N channel high electron mobility transistors (HEMTs) at atmospheric pressure in nitrogen ambient. Temperature dependent DC electrical characteristics were measured in situ up to 850 °C, after exposure to 850 °C for 60 minutes, and at 25 °C after high temperature testing. At 850 °C (time, t = 0 min), all HEMTs tested maintained an on/off ratio greater than 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> (maximum of 4.6×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup>). The threshold voltage demonstrated excellent stability with less than ±10% deviation. After returning to 25 °C, the devices showed negligible degradation. In fact, the off-state gate current decreased and on/off ratio slightly increased. The robustness of these UWBG AlGaN transistors at temperatures up to 850 °C demonstrates their viability for extreme environment applications.
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