Pulsed Plasma Deposition of Ultrathin Dielectrics for Nanoelectronics Device Fabrication
Introduction Plasma Enhanced Chemical Vapor Deposition (PECVD) has become the predominant dielectric deposition process chosen by the nanoelectronics fabrication industry due to high throughput, low temperature processing and process controllability for a majority of applications and chemistries. This is especially true for the last 25 years with Cu-Low k dielectric including inter-level dielectric, diffusion barriers and hard masks. PECVD does however have innate difficulties in thickness control, uniformity and reproducibility in depositing films in the ultrathin deposition regime (3-10 nm), especially in large 300 mm plasma CVD reactors. For thin film deposition, it is in this ultrathin regime that the initial transient (ITS) phenomena (1,2), nucleation phase, and Plasma stabilization phases of the deposition process most heavily impact the resulting process control and film properties, with the highest impact, and greatest challenges seen at step deposition times (SDT) below 1 second. The ever-shrinking dimensions of semiconductor devices is pushing the boundary of what the historical PECVD processes are capable of, necessitating new developments to enable and prolong these processes into the future. In this paper, the development of “Pulsed Plasma CVD” will be presented to extend the lifetime of the current generation of PECVD equipment, and its relevance into the sub nm technology nodes. Experimental and Discussion The ultrathin dielectrics were deposited sequentially in commercial 300 mm PECVD four-station systems using various chemistries SiH4/N2O /NH3 or TMS/ NH3 at 350-400C, 13.56 MHz RF frequencies. UV cure was used on the layer deposited at the lower temperature. Films were characterized by using various MIM/MIS electrical measurement and other analysis techniques including nano-indentation for modulus (E) and hardness (H) to determine the film electrical and mechanical properties. Other characterization methods, ellipsometry, Fourier Transformed Infrared (FTIR) spectroscopy, X-Ray electron spectroscopy (XPS) was used for the characterization of the bonding structure. and depth profiles measure film’s chemical composition. The key developments that will be discussed center around deposition breaks and sequential partial depositions taking place individually in all four sub-stations. By taking advantage of the ITS phenomena multiple times throughout the deposition, pseudo-independent layers are deposited sequentially forming a stack, wherein the individual layers can be detected through advanced TEM analysis (3) and high sensitivity, low sputter rate SIMS. With the enhanced automatic matching capabilities of current generation equipment, what we have found is that the step deposition time required for plasma stability can be significantly shortened and transitioned into an PE-ALD like state. By doing so the deposition growth rate can be controlled by the number of sequential partial depositions taking place and the significantly shortened SDT. These findings were then transferred to a Nitrogen doped Silicon Carbide PECVD process on a similar platform, with the goal of improving the oxidation barrier properties of the film and further reducing the required film thickness required to maintain adequate diffusion barrier properties. By minimizing the SDT, and significantly increasing the number of cycles, and by increasing the number of times that it is employed the ITS phenomena can be optimized resulting in a thinner, more effective oxidation barrier than previously thought (2) without sacrificing thickness, uniformity control or process repeatability (Figures 1,2,3). By employing a similar flow as the damascene Cu process used in advanced BEOL fabrication, the ultra-thin multilayer SiCN films are deposited on blanket 300mm Silicon wafers with copper and a thin cobalt cap. To evaluate the capping capability and reliability, the wafers undergo multiple rounds of annealing at increased temperatures while in an oxygen environment. Observations for copper oxidation are made between each round. The result is that by increasing the number of cyclic depositions at vastly reduced cycle deposition times, the “Pulsed Plasma CVD” SiCN cap can successfully prevent copper oxidation at film thicknesses 40% less than the base process while maintaining or improving as-deposited uniformity control (Figures 4,5). These advances are made possible by the advanced automatic RF matching capabilities implemented by the equipment vendors, and the improvement of these features will be necessary to continually push the limits that were inherent to previous generations of PECVD Equipment. Summary In summary, by transitioning standard PECVD processes to a Pulsed Plasma CVD scheme, improved thickness control can be attained in the ultrathin regime by the use of advanced RF control systems. These cyclic processes can then be further thinned down while improving the barrier properties to levels previously unattainable using standard non-cyclic PECVD by making repeated use of the initial transient phase of the deposition process. Figure 1
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