International Rectifier (United Kingdom)

Denken des Dazwischen. Poetik des Medialen« lautete der Titel der Tagung im April 2022 an der HAW Hamburg, zu der dieser Beitrag entstanden ist. 1 In den Künsten zeigt sich diese Poetik, Aristoteles bezieht 1 In meiner 2022 verteidigten Doktorarbeit Radikale Kontingenz aushalten. Die Dialektik der ästhetischen Langweile in der Gegenwartskunst arbeite ich im dritten Kapitel die Frage des Dazwischen als Zwischenort und zeit weiter aus. Der hier vorliegende Beitrag ist eine kondensierte Form dieser Überlegungen, die sich aber in Teilen wortwörtlich mit dem Abschnitt zu Manon de Boer aus der Dis-

A população em geral toma decisões diariamente antes de se deslocar, buscando rotas mais convenientes possíveis. Diversos fatores podem influenciar nessa escolha, desde o tempo de deslocamento até mesmo à paisagem. Porém, nesta pesquisa buscou-se avaliar parâmetros relacionados ao pavimento, que seriam: tipo e condição. Para isso, foram escolhidos três trechos que interligam uma farmácia à uma escola, na cidade de Campo Grande/RN. Foi aplicada pesquisa de opinião à população que utiliza como modo de transporte, principalmente, os veículos pesados, os carros e as motos, a fim de identificar se o tipo e a condição do pavimento são fatores importantes na escolha de rota. Além disso, foram determinados o Levantamento Visual Contínuo (LVC), de acordo com a norma DNIT 008/2003 – PRO e o Índice de Irregularidade Internacional (IRI), por meio do aplicativo Roadlab Pro, a fim de medir a condição do pavimento e correlacionar esses dados com as escolhas dos usuários. Verificou-se que a rota com pavimento em paralelepípedo (trecho 1) foi o trecho menos escolhido e avaliada como condição ruim, independentemente do tipo de transporte. O segundo e o terceiro trecho, ambos em pavimento asfáltico, apesar de ligeira irregularidade demonstrada pelo IRI, ainda assim foram os preferidos por carros e motos. Por apresentar geometria mais propícia ao deslocamento de veículos pesados, o trecho 3 foi o mais selecionado por essa classe. De forma geral, foi possível notar que o pavimento também pode ser um parâmetro relevante e influente na escolha de rotas dos usuários.

The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles: SRAMs and power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results. Testing to high fluence levels is required to detect rare events. This increases the probability of nuclear interactions. This is typically the case for power MOSFETs, which are tested at high fluences for single event burnout or gate rupture detection, and for single-event-upset (SEU) measurement in SRAMs below the direct ionization threshold. Differences between various test conditions (e.g., “in air” or vacuum irradiations, with or without degraders) are also explored. Nuclear interactions with any materials in the beam's path can increase the number of high collected charge events potentially impacting the experimental results. A “species” effect has been observed in the power MOSFET devices examined in this work. When the beam energy increases, the single-event-burnout (SEB) voltage is constant, such that the SEB voltage is determined only by the species of the ion beam. The species effect is shown to be due to high collected charge events induced by nuclear interactions, which can lead to premature SEB. If a device is sensitive to the species effect, the worst-case test conditions will be for the heaviest ion species, which can produce the largest linear-energy-transfer (LET) secondaries. SRAMs can also be sensitive to the species effect below the direct ionization threshold LET. For the devices used in this work, the worst-case energy for SEU characterization is <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\sim 10'{\rm s}~{\rm MeV/u}$</tex> </formula> where the species dominates the device response. In the 10's MeV/u range the heaviest species result in the largest cross sections. However, at very high energies (100's MeV/u), the species is not the dominant parameter because of differences in the population of secondaries created by nuclear interactions. At very high energies the SEU cross section below the direct ionization threshold LET decreases by several orders of magnitude compared to 10's MeV/u SEU data. The results of this work emphasize that there is no such thing as an “ideal” test facility. Nevertheless, these results can be used by experimenters to optimize the integrity of their results for given test conditions.

Nanowire arrays of copper indium diselenide (CuInSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) were fabricated using an electrochemical deposition process. Custom anodized aluminum oxide (AAO) membranes on a glass substrate with a Ti interlayer served as templates for this electrodeposition. Typical diameter of electrodeposited nanowires was 60 nm although process parameters for anodization could be varied in a controlled way to obtain pore diameters as low as 20 nm. Elemental composition of these CuInSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanowires on titanium substrate was studied using energy dispersive x-ray analysis (EDX). The atomic percentage ratio for as deposited nanowires was Cu: In: Se= 1:1.16:2.53. The electrolyte composition and other deposition parameters were optimized in order to yield slightly In-rich structures because it is well known that such films result in better photovoltaic devices. It is thought that, with material properties ideally suited for photovoltaic (PV) applications, the use of CIS nanowire arrays would enable a new generation of PV device architectures.

The increasing demand for higher power density and lower cost in high voltage power supplies has driven semiconductor manufacturers to expand IGBT performance for high switching frequency beyond 100 kHz. An ultra thin punch-through IGBT with a blocking voltage of 650V has been developed and optimized targeting DC-DC conversion up to 200 kHz. Its high Tjmax of 175°C further enhances the converter compactness. This paper describes the feature of this ultra fast IGBT in a critical comparison with equivalent products available on the market today.

In this paper, we demonstrate the feasibility of controlling the speed of an induction motor using a wireless position feedback over an RF link, and compare its performance under dynamic- and steady-state conditions with those obtained by using a wire-based position feedback control. The wireless scheme precludes the need for the cable that feeds the position from the sensor to the controller, thereby minimizing feedback noise pickup and cost for some applications. It also raises the possibility of using a low-resolution, low-cost sensor, which, along with the use of simple estimation algorithms, may potentially provide an alternative to or backup support for conventional position sensorless control for a wide range of motors and speeds. Further, using a composite Lyapunov-function-based approach, we determine the effect of time delay (due to wireless communication) on the stability of the overall system.

De nombreuses etudes l'ont confirme, le facteur socio-economique en est un des plus determinant et discriminant quant aux risques de decrochage scolaire. En effet, lorsqu'on compare les eleves de familles plus fortunees a ceux issus de familles qui le sont beaucoup moins, regle generale, ces derniers enfants issus d'un milieu defavorise sont beaucoup plus susceptibles d'eprouver des difficultes a l'ecole. Dans le meme sens, les jeunes issus d'un milieu familial defavorise socio-economiquement ont un net desavantage par rapport aux autres provenant de familles aisees, quant a la possibilite d'atteindre et de reussir des etudes secondaires ou post-secondaires, et cet ecart se dessine plus particulierement au niveau universitaire. Les theories macrosociologiques sont egalement fort pessimistes quant aux chances de mobilite sociale ascendante d'individus issus de milieux caracterises par la pauvrete. Cependant, certaines personnes echappent a ce « determinisme » et peu de chercheurs en education se sont penches sur leur cas. Ainsi, c'est a ce phenomene malheureusement encore exceptionnel que s'est interesse cette recherche de maitrise en tentant de repondre a la question suivante : Par quels motifs des personnes issues d'un milieu familial defavorise socio-economiquement, et ayant atteint ou reussi des etudes universitaires, expliquent-elles leur cheminement (ou reussite) scolaire? C'est donc dans un cadre epistemologique qualitatif/ interpretatif, et selon une logique d'investigation comprehensive, que le but poursuivi par cette recherche est de comprendre et d'interpreter, suivant une logique ethnosociologique, la reussite scolaire de personnes issues d'un milieu familial socio-economiquement defavorise ou, en d'autres mots, on veut comprendre et interpreter les motifs lies a la reussite scolaire selon ces memes personnes. Et c'est dans un cadre theorique et conceptuel prenant assise a travers differents concepts tires de la microsociologie que s'est articule la cueillette et l'analyse des donnees. C'est donc a partir de donnees tirees de recits de vie scolaire recueillis aupres de douze informateurs (ou sujets de recherche), sept femmes et cinq hommes issus d'un milieu caracterise par la pauvrete et ayant frequente les etudes universitaires, que certains elements de reponse a caractere sociologique ont emerge, cela bien que chaque recit ou trajectoire scolaire et sociale soit indeniablement original. L'analyse thematique/ comparative, ayant pris essentiellement la forme de tableaux comparatifs, a ete celle privilegiee au cours de cette recherche. Les thematiques retenues aux fins d'analyse ont ete les suivantes : le rapport a l'ecole des sujets et la conception de l'education scolaire dans leur milieu familial; les aspirations, les motivations et les domaines d'etudes des sujets; les elements ayant supporte les sujets au cours de leur cheminement scolaire et ceux les ayant contraints. Les resultats obtenus sont nombreux et diversifies. De maniere generale, il est apparu que la majorite des informateurs avait une representation positive de leur parcours scolaire et que la mere en particulier, a travers son attitude de valorisation des etudes ou de neutralite face a la scolarisation, a ete un « element » favorisant leur persistance aux etudes. De plus, contrairement a ce qu'on aurait pu croire au depart, les sujets avaient un rendement bon a moyen au cours de leurs etudes, sans etre des premiers de classe. On retient egalement que la majorite d'entre eux aspirait a un statut social plus eleve que celui de leurs parents (reve de mobilite sociale). De meme, certains acteurs ont joue un role significatif dans le parcours scolaire des sujets : la mere, les amis et certains enseignants ont ete des personnes aidantes par leur appui moral, par leur attitude de valorisation, etc. D'autres acteurs ont ete davantage des modeles, notamment a travers leur persistance aux etudes. Il est egalement apparu que certains elements ont particulierement supporte les sujets au cours de leur cheminement scolaire, tel le fait de pouvoir concilier le travail et les etudes, la possibilite d'avoir acces a une aide financiere gouvernementale via le systeme de prets et bourses, ou la proximite des etablissements d'enseignement frequentes. Quant aux elements ayant contraint les sujets, ils ont ete dans la plupart des cas a caractere familial (par exemple, etat de sante precaire ou alcoolisme des parents) ou financier, ce dernier element ayant eu un impact variable sur le cheminement scolaire de chacun des sujets, en demeurant tout de meme pour eux une contrainte a surmonter.

&lt;div class="htmlview paragraph"&gt;A demonstration inverter has been built to illustrate the feasibility of implementing an ISA inverter in a 42V automotive powernet using discrete semiconductor switches. The high current carrying capability of the package (300A) enables the component count to be reduced to a minimum of two per switch. For a 10kW inverter, the current carrying requirements of each switch is about 400A peak. With careful layout and design, this solution could be a viable alternative to a module solution, which typically would have the same FET component count.&lt;/div&gt;