Mapper Lithography (Netherlands)

<p>Livestock transportation is carried out to fullfill the need for consumption as well as for raising the livestock in other areas. The regulation of livestock transportation are not well implemented, and far from the ideal way of livestock transportation, such as the aspects of animal welfare. This paper aims is to describe the transportation process, challenge and its effects on small ruminants. The process of transporting livestock is carried out by preparing thye animal that are going to be transported, and the means of transportation used. Travel distance and road infrastructure conditions provide an affordable connection for the transportation of livestock. Long distances and poor infrastructure conditions can cause stresproblems to livestock transportation. Livestock becomes stres and cortisol levels increased in the blood and physiological responses were affected due to transportation. The Goat Research Institute designed a cage in a truck to transport goats and logistical needs during the trip by land and sea routes and has been used in the distribution of goats. The journey took 1 to 16 days with average goat mortality rate was about 0.3%. Severe impacts during the trip can be overcome by transporting goats with attention to the transportation system and to ensure the welfare of animals during the trip.</p>

The impact of two dietary organic acids (OAs) on nutrient digestibility and intestinal morphology was determined in Nile tilapia under conditions of dissolved oxygen in the water: normoxia and hypoxia. Four diets designated as control (0 g/kg organic acid salt), KDF (2 g/kg potassium diformate), CAB (2 g/kg calcium butyrate) and their combination (4 g/kg of a mixture of KDF and CAB, ration 1:1) were formulated with 520 g/kg of soybean meal in order to produce soybean meal enteritis-like symptoms. The four diets were tested first under normoxic conditions (6 mg/L) for a period of 5 weeks, followed by a test period under hypoxic conditions (3 mg/L). The results showed that OAs were unable to significantly improve growth and nutrient digestibility under normoxic conditions but under hypoxic conditions, there was a significant enhancement of the growth and nutrient digestibility. Fish fed OA-supplemented diets showed improvements in the intestinal morphology under the normoxic conditions, and these effects were more pronounced under the hypoxic conditions. Experimental findings suggest that OAs can improve the nutrient digestibility and intestinal morphology under hypoxic conditions. A synergistic effect by the combination of formic and butyric acid on growth, digestibility and intestinal morphology was not found.

Massively parallel electron beam direct write (MP-EBDW) lithography is a cost-effective patterning solution, complementary to optical lithography, for a variety of applications ranging from 200 to 14 nm. This paper will present last process/integration results to achieve targets for both 28 and 45 nm nodes. For 28 nm node, we mainly focus on line-width roughness (LWR) mitigation by playing with stack, new resist platform and bias design strategy. The lines roughness was reduced by using thicker spin-on-carbon (SOC) hardmask (−14%) or non-chemically amplified (non-CAR) resist with bias writing strategy implementation (−20%). Etch transfer into trilayer has been demonstrated by preserving pattern fidelity and profiles for both CAR and non-CAR resists. For 45 nm node, we demonstrate the electron-beam process integration within optical CMOS flows. Resists based on KrF platform show a full compatibility with multiple stacks to fit with conventional optical flow used for critical layers. Electron-beam resist performances have been optimized to fit the specifications in terms of resolution, energy latitude, LWR and stack compatibility. The patterning process overview showing the latest achievements is mature enough to enable starting the multi-beam technology pre-production mode.

The emerging Massively Parallel-Electron Beam Direct Write (MP-EBDW) is an attractive high resolution high throughput lithography technology. As previously shown, Chemically Amplified Resists (CARs) meet process/integration specifications in terms of dose-to-size, resolution, contrast, and energy latitude. However, they are still limited by their line width roughness. To overcome this issue, we tested an alternative advanced non-CAR and showed it brings a substantial gain in sensitivity compared to CAR. We also implemented and assessed in-line post-lithographic treatments for roughness mitigation. For outgassing-reduction purpose, a top-coat layer is added to the total process stack. A new generation top-coat was tested and showed improved printing performances compared to the previous product, especially avoiding dark erosion: SEM cross-section showed a straight pattern profile. A spin-coatable charge dissipation layer based on conductive polyaniline has also been tested for conductivity and lithographic performances, and compatibility experiments revealed that the underlying resist type has to be carefully chosen when using this product. Finally, the Process Of Reference (POR) trilayer stack defined for 5 kV multi-e-beam lithography was successfully etched with well opened and straight patterns, and no lithography-etch bias.

Fabrication of high density vertical Germanium photodiodes (PDs) on top of 200 mm CMOS wafers coming from an external foundry is discussed. Optical performances of stand-alone PDs are compared lo those of CMOS-coupled PDs.

The MATRIX platform integrates new types of modules for handling and alignment capability and this represents two new and innovative aspects for multi-beam lithography. Results on performances in terms of robustness of the different modules in real manufacturing conditions, including the interface of the MATRIX platform with the SOKUDO DUO track will be reported. A new type of alignment solution was developed by MAPPER. This paper will show the first results on alignment sensor repeatability. Preliminary results on the overlay performance of the MATRIX platform will be presented and discussion will be engaged to position the MAPPER alignment concept with respect to the ITRS roadmap expectations.

High-density germanium photodiode arrays are integrated on top of a dummy CMOS 200-mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested photodiodes with respect to bandwidth, responsivity, and dark current. A very low dark current density in the range of 7 mA/cm2 is obtained. A median bandwidth above 9 GHz is reached with a large 30-μm diameter photodiode.

In the latest ITRS roadmap updated in July 2010, Maskless remains identified as one of the candidate to address lithography needs for the sub-16nm technology nodes. The attractiveness of this solution in terms of cost and flexibility linked to the throughput potential of the massively parallel writing solutions maintain the interest of large scale IC manufacturers, such as TSMC⁽¹⁾ and STMicroelectronics, to push the development of this technology. In July 2009, LETI and MAPPER have initiated an open collaborative program IMAGINE focused on the assessment of the MAPPER technology. This paper reports on the key results obtained during this first assessment year in terms of: resolution capabilities, stitching performances, technology reliability and infrastructure development. It also provides an extensive overview on the maturity degree and the ability of this low energy accelerating voltage multibeam option to answer to the industry needs in the 2015 horizon.

MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing in combination with high speed optical data transport for switching the electron beams. With 13,000 electron beams each delivering a current of 13nA on the wafer, a throughput of 10 wph is realized for 22nm node lithography. By clustering several of these systems together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV. The most mature and reliable electron source currently available that combines a high brightness, a high emission current and uniform emission is the dispenser cathode. For this electron source a reduced brightness of 10⁶ A/m²SrV has been measured, with no restrictions on emission current. With this brightness however it is possible to realize a beam current of 0.3nA (@ 25nm spotsize), which is almost a factor 50 lower than the 13nA that is required for 10 wph. Three methods can be distinguished to increase the throughput: 1. Use an electron source with a 50× higher brightness 2. Increase the number of beams and lenses 50× 3. Patterned beams: Image multiple sub-beams with each projection lens MAPPER has selected option 3) 'Patterned beams' as the method to increase the beam current to 13nA. This because an electron source with a 50x higher brightness is simply not available at this time, and increasing the number of beams and lenses 50× leads to undesirable engineering issues. During the past years MAPPER has been developing the concept of 'Patterned beams'. By imaging 7×7 sub-beams per projection lens the beam current is increased to the required 13nA level. This technique will also be used to maintain throughput at 10 wph for smaller technology nodes by further increasing the number of sub-beams per projection lens. In this paper we will describe the electron optical design used to image these multiple sub-beams per lens, as well as experimental demonstration of this electron optical configuration. Also the writing strategy will be discussed, as well as the first patterning results. One of the key components for 'Patterned beams' is the beam blanker array, since each subbeam must be switched on and off individually. The design of the blanker deflectors, the circuitry, as well as experimental results of the blanker array will be shown. Finally the roadmap to further technology nodes will be discussed.