Mikron (Russia)

The paper concerns ferroelectric film features and their application in the field of memory ICs design. The results of FRAM test memory cells irradiation are shown and discussed. The current responses of the memory cells are presented as well as the calculated value of polarization The measurement complex used during the experiment is described.

The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.

Results of a comprehensive analysis of process variables of TiN/Ti diffuse barrier structures used in modern microelectronics are presented. To provide reliable spectral ellipsometry results, which is a common technique for postprocess control of these structures during the testing stage of the manufacturing process, a comprehensive approach is suggested that consists in consistent processing of transmission electron microscopy and X-ray reflectometry data. The resulting data were used to calculate the variances of optical coefficients of spectral ellipsometry, which depend on features of the manufacturing process and are required for analysis of the parameters of manufactured diffuse barrier structures.

We present results of a SiGe:C HBT module transfer from a 0.25 μm (IHP) BiCMOS process to a 0.18 μm (Mikron) RF-CMOS baseline. Best possible parameter matching of three different HBT types with BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> values of 2.4 V, 4 V, and 7 V was a challenging task due to a 15 deg higher SD-RTA temperature of the 0.18 μm CMOS. Here, we focus on the high-voltage (7 V) device discussing two effects which result from further differences in the CMOS baselines. First, we deal with the particular importance of collector-substrate capacitance (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CS</sub> ) for the transistor f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> . We show that about 20% gain in f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> was obtained by preventing a C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CS</sub> perimeter component. In result, HBTs are demonstrated showing f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 90 GHz at 7V BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> . Second, we investigate whether adding the 1.5 MeV, NMOS isolation implant to the high-voltage HBT collector brings benefits for the transistor behavior.

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The study of the direct current (dc) glow discharge plasma parameters and active species kinetics in HBr ( p =30-250 Pa, i d =10-30 mA) was carried out using the 0-dimensional self-consistent steady-state model. The model included the Boltzmann kinetic equation, the balance equations for both neutral and charge particles, plasma conductivity equation and the quasi-neutrality conditions for volume densities of charged particles as well as for their fluxes to the reactor walls. The final set of cross-sections of electron impact processes for HBr molecules was optimized based on the recent literature data. The data on the steady-state electron energy distribution function, electron gas characteristics (mean energy, drift rate and transport coefficients) and volume-averaged densities of plasma active species were obtained as functions of gas pressure and discharge current.

A test object for a scanning electron microscope, which has a trapezoidal profile of the relief with large angles of inclination of the side walls, is developed. The test object contains elements (protrusions) with three certified dimensions of the linewidth, situated in two mutually perpendicular directions.