Tan Kah Kee Innovation Laboratory

ABSTRACT In the contemporary landscape of accelerating artificial intelligence (AI) development, multi‐dimensional information recognition has emerged as a critical enabler for enhancing both data computational efficiency and decision‐making precision. However, traditional multi‐dimensional recognition architectures exhibit a fundamental reliance on extensive hardware arrays and complex circuit topologies, posing significant challenges to hardware integration and system‐level miniaturization for AI‐based recognition systems. Here, for the first time, we propose an in situ 4D neuromorphic transistor (I‐FNT) and design a 4D spatiotemporal recognition system based on I‐FNT. Through dynamic encoding of the input port voltages of I‐FNT, programmable switching among three recognition modes (grayscale, depth, and time) is achieved, enabling cross‐dimensional information perception. Compared to existing multi‐dimensional information recognition systems, our 4D spatiotemporal recognition system significantly simplifies hardware while achieving 100% device integration gain. The I‐FNT‐integrated convolutional neural network (CNN) harnesses spatial (depth) information to achieve breakthrough performance in object recognition: 122% higher training efficiency and 345% faster training speed relative to conventional architectures, while attaining 94% accuracy. The system simultaneously facilitates object motion trajectory recognition, demonstrating comprehensive spatiotemporal processing capabilities. Therefore, I‐FNT provides an efficient and accurate novel solution for multi‐dimensional information recognition, representing a significant breakthrough for intelligent sensing and AI‐based recognition systems.

The concurrent enhancement of the dissymmetry factor (glum) and photoluminescence quantum yield (Φlum) remains a long-standing challenge in chiral circularly polarized luminescence (CPL) materials. Here, we propose a multilevel structural design strategy that integrates pH-regulated in situ ligand hydrolysis, mixed-ligand coordination, supramolecular self-assembly, and polymer matrix embedding to address this issue. Through the controlled hydrolysis of chiral oxazoline-based ligands, enantiomeric lanthanide complexes (R-/S-Lna and R-/S-Lnb, Ln = Eu/Tb) were obtained. The mixed-ligand system R-/S-Lnb exhibits larger glum values (0.027/–0.028 for R-/S-Eub, 0.010/–0.012 for R-/S-Tbb) and higher Φlum values ((75.2 ± 0.2)% for R-Eub and (81.5 ± 0.5)% for R-Tbb). By embedding R-/S-Lnb into PMMA matrices, we fabricate optically transparent, stable, and processable CPL-active thin films R-/S-Lnb@PMMA. The Φlum value of R-Tbb@PMMA is as high as (91.6 ± 0.6)%. Taking advantage of the dual photoluminescence and CPL features of R-/S-Lnb@PMMA films, we demonstrate their proof-of-concept applications in optical information storage and encryption.

Indium phosphide quantum dots (InP QDs) are premier candidates for environmentally friendly displays, yet their industrial utility is limited by complex, multistep synthesis methods requiring intermediate purification. Here, we present a kinetic control and ligand synergy strategy enabling the centrifugation-free, one-pot synthesis of high-performance green InP/GaP/ZnS QDs. By pinpointing the nucleation temperature (250 °C) and optimizing the In:myristic acid ratio (1:4), we establish a dynamic ligand environment that successfully suppresses oxidized indium species (InPOx) formation and nonradiative recombination, as validated by X-ray photoelectron spectroscopy. The resulting green-emitting InP/GaP/ZnS QDs achieved an outstanding photoluminescence quantum yield (PLQY) of 86% and a narrow full width at half-maximum of 44 nm, representing the highest reported PLQY for one-pot synthesized InP QDs with GaP intermediate shells. Quantum dot light-emitting diodes fabricated with these QDs demonstrate stable electroluminescence at 535 nm, achieving a maximum external quantum efficiency of 3.02% and a current efficiency of 12.14 cd A–1. This scalable, centrifugation-free approach effectively bridges the performance gap between one-pot and multistep synthesis, offering a viable pathway toward the industrial manufacturing of environmentally benign QDs for display and lighting applications.

Symmetric all-organic proton batteries (SAOPBs) attract increasing attention for large-scale energy storage due to their safe and superior rate performance, which is severely limited by the lack of suitable bipolar electrode materials that integrate reversible dual-redox activity and high operating voltage within a single structure. Herein, we report a bipolar covalent organic framework (TAPT-HAT-COF) as both cathode and anode in symmetric proton battery. In this COF, the electron-deficient pyrazine/carbonyl units and electron-rich phenylimine groups establish two independent and reversible redox couples, achieving a high operating voltage of up to 0.83V. Combined with in situ FTIR spectroscopy and theoretical calculations, TAPT-HAT-COF shows bipolar charge storage mechanism with the C═N and C═O groups served as reversible redox centers. Benefiting from the fully conjugated structure and abundant active sites, the assembled SAOPB exhibits high specific capacity of 108.5 mAh g-1 under 5 A g-1 with stable cycling over 3000 cycles. Moreover, when applied in a practical pouch cell, which delivers a specific capacity of 145.8 mAh g-1 at 0.5 A g-1, confirming the material's potential for practical applications. The work can provide viable design strategy and model of bipolar COF materials for symmetric energy storage systems.