United Microelectronics (Taiwan)

Boron neutron capture therapy (BNCT) aimed to treat brain tumor is deteriorated by the poor aqueous solubility of BNCT agent, boronophenyl alanine (BPA). Solubilizers such as sorbitol, mannitol and xylitol...

The kink effect in GaN (Gallium Nitride) High Electron Mobility Transistors (HEMTs) arises from trap-related device behaviors, leading to a sudden increase in drain current in the output (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf>–V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf>) characteristics. Accurate modeling of this effect is essential for reliable circuit design. While previous models based on the Advance SPICE Model (ASM) HEMT framework capture the kink effect, they have limitations in temperature scalability. This work presents an improved ASM-HEMT model with temperature-dependent parameters, enabling accurate prediction of kink onset from −40°C to 150°C. The model, implemented in Verilog-A and validated against both DC and load-pull measurements, demonstrates high accuracy across the wide temperature range, making it suitable for GaN circuit simulation under dynamic thermal conditions.

As datacenter’s demands are growing with Artificial Intelligent (AI) workloads, high-speed interconnect (HSIO) channel design highly depends on cable assemblies to support PCIe connectivity. To enable scalable and flexible system architectures, advanced flat cable innovations have been proposed and developed. This study compares flat and round MCIO cables within a 3-connector HSIO topology, evaluating signal integrity, electrical margin, and functional performance. Flat cables offer greater flexibility for cable management but exhibit higher insertion loss and impedance mismatch with the motherboard, which can impact signal quality. In contrast, round cables demonstrate superior electrical margins and lower signal loss. Despite these differences, both cable types deliver comparable throughput when proper transmitter equalization (Tx EQ) settings are applied. These findings provide valuable guidance for selecting optimal cable types and tuning equalization strategies to ensure robust channel design in AI server platforms.

This paper presents a comprehensive analysis of graded-AlGaN/GaN HEMT on a β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> substrate, with a focus on the impact of an AlGaN back-barrier layer on device performance. Through detailed TCAD simulations, the study evaluates key performance metrics, including linearity, RF characteristics, and breakdown voltage. Results demonstrate that the proposed device exhibits enhanced electron confinement, improved linearity, and a 24.43% higher breakdown voltage compared to conventional HEMTs. Furthermore, a 22.37% higher Johnson’s Figure of Merit (JFOM) has been achieved underscoring its suitability for high-frequency power applications. These findings highlight the potential use of back-barrier designs in advancing GaN HEMT technology for next-generation electronic systems.

Indonesian Government established tax regulation, PMK No. 48/PMK.03/2020 concerning taxes on trade through electronic systems. This regulation was rejected by the public, business entities, and digital commercials, while basically the tariff used was 10% for sales in accordance with the value added tax (VAT) rate. This study aims to analyze whether the application of the e-commerce tax provides an opportunity or challenge in obtaining a source of state revenue to restore the Indonesian economy in the midst of Covid 19. This also supports the point eight of SDGs, economic growth and decent work. By conducting literature review and in-depth interviews, the results indicate that the implementation of e-commerce tax regulations provides an additional source of state revenue. On the other hand, it presents challenges in collecting electronic business taxpayers who are considered difficult to identify. In addition, a review is needed to strengthen and clarify the regulations governing e-commerce taxes.

Laser voltage imaging (LVI) and laser voltage probing (LVP) are laser stimulation techniques to verify a device under test (DUT) and have been widely used for circuit debugging and various frequency-dependent failure modes [1] [2]. In this paper, a scan chain with timing failure study was demonstrated by using LVI and LVP techniques, and further physical failure analysis (PFA) found dislocations in bulk silicon by plan view transmission electron microscopy (TEM). However, on checking the depth of dislocations by 3D-TEM, only deep dislocations were found, and it was hard to explain the phenomenon of channel leakage.In this paper, it is not to introduce the methods for dislocation inspection. The major idea is how to distinguish the dislocations those would induce channel leakage. In this work, we presented a re-thinning technique for shallow dislocation inspection by using EasyLift [5]. The EasyLift system allowed operators to extract the lamella and attach it to a TEM grid, all within the dual beam FIB chamber. Because the lamella had attached to TEM grid, lamella re-thinning and acquisition of TEM images could be performed repeatedly [6]. Using this method makes it possible to partially remove the deep dislocations from bulk silicon and then perform 3D-TEM to acquire the actual depth of target of interest.

The author reported the AlGaZnO photodetector characteristics with various AGO:ZnO co-sputtering power ratio. It was found the optimized on/off ratio and responsivity were about 3.64 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> and 0.15 A/W, respectively, at the 10 V applied bias, and with AGO:ZnO power ratio of 80 W:50 W. The UV to visible rejection ratio was 8.08 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> , indicated the significant response under UV illumination. The on/off ratio and responsivity could further be improved to 4.2 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> and 0.44 A/W, respectively, by annealed at 300°C for an hour, to decrease the defect in the AGZO film. Besides, the photoresponse of the AGZO photodetectors also showed a repeatable and stable switching characteristic. These results indicate the performance of AGZO photodetector were good, and can be a good candidate for low cost, fast fabricated solar-blind application.

A device design technique for boosting output resistance (Rout) characteristics of long-channel halo-doped nMOSFETs for replacement gate (RMG) high-k/metal gate (HK/MG) devices is proposed based on numerical simulations. We show that the self-aligned halo-compensated channel implant (HCCI) that is carried out after dummy poly gate removal provides compensation for the conventional halo doping. This can be utilized to mitigate the magnitude of potential drop beyond saturation at the drain end so that the long-channel Rout can be boosted relative to the conventional halo-doped device. In addition, we achieve an improved Vt roll-off behavior, an advantage to hot carrier injection (HCI) characteristics at high voltage operation, and the lowered short-channel drain-induced barrier lowering (DIBL) and intrinsic delay via the optimization of the source/drain (S/D) doping profile. HCCI technique can be implemented using a process flow that is compatible with the RMG HK/MG system-on-chip (SoC) technology in the mass production.