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This paper presents a novel method by using resonators in both input and output matching networks to design a tri-band GaN HEMT power amplifier. Two parallel resonators in series as one frequency selection element are used for each operation frequency. By applying this frequency selection element in both input and output matching networks constructed with microstrip line, tri-band matching network is realized. With our proposed frequency selection element, we can use the conventional L-type structure to design matching network for three frequencies so that the design analysis procedure is easier. We also propose a new simplified output matching network by using bias line to match the output impedance to reduce the number of resonators. To demonstrate our method, we fabricate a tri-band power amplifier that can work at 1 GHz, 1.5 GHz, and 2.5 GHz concurrently. Experimental results show that the output power is 39.8 dBm, 40.8 dBm, and 39.2 dBm with 56.4%, 58.3%, and 43.4% power added efficiency (PAE) at 1 GHz, 1.5 GHz and 2.5 GHz, respectively.

Improvement of power amplifier’s performance is the desired topic in communication systems. There are many efforts are made to provide good input and output matching, high efficiency, sufficient power gain and appropriate output power. This paper presents a power amplifier with optimized input and output matching networks. In the proposed approach, a new structure of the Hidden Markov Model with 20 hidden states is used for modeling the power amplifier. The widths and lengths of the microstrip lines in the input and output matching networks are defined as the parameters that the Hidden Markov Model should optimize. For validating our algorithm, a power amplifier has been realized based on a 10W GaN HEMT with part number CG2H40010F from the Cree corporation. Measurement results have shown a PAE higher than 50%, a Gain of about 14 dB, and input and output return losses lower than -10 dB over the frequency range of 1.8–2.5 GHz. The proposed PA can be used in wireless applications such as radar systems.

This article presents a reconfigurable dual-path dual-band low noise amplifier (LNA) for fifth generation (5G) millimeter-wave (mmW) communications. A novel band-switching input matching architecture based on the cross-connected transistors is proposed to achieve optimal dual-band input matching and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$g_{m}$</tex-math> </inline-formula> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</i>boosting. This architecture allows the dual-band input transistors to share a tri-coupled-transformer-based input matching network (MN) while maintaining independent output paths. Furthermore, an 8-shaped transformer-based decoupling interstage MN provides optimal interstage impedance matching in the low-band and high-band modes while sharing the same footprints with negligible performance degradation. In addition, to suppress interference from image bands, a notch filter based on negative resistance is integrated into the output MN. A prototype of the proposed LNA was fabricated in TSMC 65-nm bulk CMOS process with a compact core size of 0.132 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The measurement results show that the proposed LNA covers the n257 and n260 bands, achieving a peak gain of 17.8/17.9 dB at 28/37.1 GHz and image rejection (IR) of 37.4/25.9 dBc at 38.2/28.5 GHz, respectively. The measured noise figure (NF) reaches minimum values of 3.23/3.63 dB at 28/37.8 GHz. Moreover, the power consumptions of the two modes are 19.9 and 21.2 mW, respectively, from a 1.0-V supply voltage.

In this paper, we employ a novel method by using resonators with microstrip lines to design a dual-band GaN HEMT power amplifier. At both input and output matching networks, we add parallel resonators between series microstrip lines and open-circuited stubs to realize the dual-band operation. With our proposed structure, we can use the conventional L-type structure to design matching network for each operation frequency so that the design is easier. By using just one transistor without any tunable electronic element or switch, a novel dual-band class AB power amplifier working at 1.5 GHz and 2.4 GHz is designed and fabricated to demonstrate our proposed simple method. With dual-band matching networks using resonators, the experimental results show the output power 40.3 dBm and 39.05 dBm with power added efficiency (PAE) 55.63% and 40.25% at 1.5 GHz and 2.4 GHz, respectively.

This paper presents a new method that improves the stability of the C-band GaN power amplifier (PA) while maintaining high PA gain. It is well known that the electromagnetic (EM) coupling between the PA input and output matching network (MN) can degrade the PA stability. In this paper, an iteration method is used to monitor the design of the input MN to compensate the EM coupling and stabilize the whole PA, while the output MN is designed to improve the PA efficiency by carefully controlling the drain impedances at multiple harmonic frequencies. By using the proposed method, a 5.8GHz class-F power amplifier is designed, fabricated and measured. Experimental results reveals that the proposed PA archives a saturation output power of 38.2dBm, drain efficiency of 70.7% and gain of 13.5dB while maintaining a high stability factor over the entire frequency band.

A compact broadband 12 W power amplifier with broadband matching networks is presented. Transistors connected in parallel are used to synthesize the high power. Input, interstage, and output matching networks are also properly designed to meet the requirement of the broadband application. The broadband high power amplifier (HPA) was fabricated using a 0.15‐μm gallium nitride (GaN) HEMT technology, with a maximum saturated measured output power of 43 dBm from 6 to 18 GHz. The measured power added efficiency exceeds 20% in the whole interested band. The proposed HPA also has a compact size of 3.1 mm × 2.96 mm.

A method for characterizing the intrinsic loss characteristics of a symmetrical two port network using a two tier calibration procedure is presented. A first tier calibration to device fixturing ports results in symmetry. The second tier calibration uses a single through line. The resulting characterization is equivalent to the transmission factor of the network with ideal input and output matching networks. This has the effect of putting two ideal matching networks at the input and output of the network. A microstrip bandpass filter measurement and characterization using this technique is presented. The results are compared with deembedded characterization obtained using the TRL calibration procedure.

This paper presents a compact wideband power amplifier (PA) which can be reconfigured in two different wide bands for 5G applications. To achieve the reconfiguration of operation frequencies and reduce the circuit volume, a simple switching T-shaped impedance matching network is adopted, including only one PIN diode, to realize the input matching network (IMN) and output matching network (OMN). The second harmonic control technology is adopted to improve the performance. To demonstrate the reconfigurability of two wide bands, a PA was designed and fabricated to operate at 3.2-3.6 GHz and 4.6-5.0 GHz based on GaN HEMT die device. The size of PA is 43x45 mm. Measured results show that the designed PA achieves 40.5-41.7 dBm output power and 53%-71% drain efficiency in the first band, while 39-40.4 dBm output power and 48%-56% drain efficiency in the second band.

In this research paper, a mm-wave up-conversion mixer with very wide bandwidth is investigated. With most reported designs in the mm-wave range operating at small relative bandwidths, the large potential for data transmission speeds is not harnessed. With this, more spectrally efficient high-order modulation schemes become necessary which require complex digital-to-analog circuits and digital processing, resulting in high DC-power consumption. We study a concept that provides a very large RF bandwidth; this is achieved optimizing the input and output matching networks as well as the order of feeding LO and IF signal. To prove the concept, a chip was implemented in a 130 nm SiGe BiCMOS technology. With 27.2 mW of DC power, a conversion gain of −13 dB is combined with suppressing the LO and third harmonic signal by 20.7 dB and 22.1 dB respectively. At 103.9 GHz of RF bandwidth around a center frequency of 245 GHz, the state of the art is advanced by 23 %. This circuit can enable BPSK operation at transfer speeds higher than 100 Gbps.

Amplification is one of the most basic and prevalent RF/Microwave circuit functions. This paper describes the design of an MIC(microwave integrated circuit) LNA(low noise amplifier) using PHEMT(Pseudomorphic High Electron Mobility Transistor) ATF-36077 in the frequency band 4.8 to 5.2 GHz The amplifier is designed using the Agilent’s ADS (Advanced Design System). The software was used to do minimum noise matching for the input stage and matching for maximum gain for the second stage. ADS has been used to design the input and output matching networks. A completed design of the amplifier was further optimized. The layout generated by the software was used to fabricate the amplifier. Momentum analysis of all the transmission lines and stubs used in the design was carried out to take into account the parasitic effects. Also, the method for the measurement of sub 1 dB noise figure is described for accurate measurement of noise figure. The LNA has demonstrated gain of 23.4 dB and noise figure 0.8-1.1 dB in the desired frequency band.

Multi-switch-controlled multi-mode TRFE with a high-linearity ATRSW for 2.4-GHz ISM applications

In order to meet the requirements of high efficiency and broadband for the wireless communication system, a high efficiency and broadband gallium nitride power amplifier (PA) is designed and verified. Using the step-matching structure, its bandwidth has been improved. Furthermore, its input matching network is constructed by connecting several microband lines serially to reduce the matching Q value. Meanwhile, the harmonic control network is designed as the output matching network, which is built by a quarter-wave (λ/4) line open circuit and short circuit microwave lines in parallel. Thus, its drain efficiency (DE)can be improved. This design is simulated and tested at 2.2–3 GHz with the gallium nitride (GaN) process. After measuring, it attains an output power (Pout) of 39.5–41.5 dBm, Gain of 10.5–12.5 dB, DE of 65.1%–78.3% with power added efficiency (PAE) of 64.8%–76.2%.

Global modeling of microwave and millimeter-wave circuits is important to simulate the electromagnetic (EM) coupling, device-EM wave interaction, and the EM radiation effects of the closely spaced active and passive components of monolithic microwave integrated circuits (MMIC's). In this paper, a global-modeling technique is presented to characterize the millimeter-wave integrated-circuit amplifiers. The characterization of amplifier circuits, including the input and output matching networks, are performed using a full-wave analysis coupled with physical modeling of the semiconductor devices. The entire amplifier is simulated with the finite-difference time-domain (FDTD) algorithm, which also solves for the EM fields inside the transistor. The intensive computer-memory requirement and the large simulation time are reduced by applying a hybridization approach. The small signal as well as the large signal propagation through the amplifier circuit are demonstrated. The scattering parameters are extracted for the amplifier circuit at small and large signals for different frequencies. The global technique is able to model the nonlinearity and the harmonic distortion of the amplifier circuit. The third and fifth harmonic components in the output spectrum at large signal are predicted for different frequencies.

This paper presents a compact transformer-based linear and efficient power amplifier (PA) in 0.13-μm SiGe:C BiCMOS for 5G applications. To reduce the form factor, an ultra-compact neutralized cascode PA core is proposed, which achieves a state-of-the-art power density. To obtain a gain flatness at 5G NR band n257 (26.50-29.50GHz), transformer-based input and output matching networks are designed. The PA demonstrates a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$S_{21}$</tex> 3-dB bandwidth <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(BW_{-3\text{dB}})$</tex> of 10.5GHz from 23.5 to 34GHz. At 28GHz/29GHz, the saturated output power ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$P_{\text{sat}}$</tex> ) are 22.7/22.4dBm with power-added efficiency (PAE) of 38.1/39.8%. The PA also supports 64- and 256-QAM modulated signal tests without digital pre-distortion (DPD). Over 26-30GHz, for 4.8Gb/s 64-QAM signals with peak-to-average power ratio (PAPR) 8.3dB at −25dB EVM, this PA continuously achieves >16dBm average power ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$P_{\text{avg}}$</tex> ) with >11% PAE.

A K-band power amplifier (PA) module with on-chip input and output matching network was fabricated in standard 130-nm CMOS process with 1.5-V supply voltage. The fully integrated PA module consists of 2-stage pseudo-differential cascode configuration PA and on-chip stacked balun based on transformer. At 26GHz, the PA achieved 18.6-dB small-signal gain, 12.2-dBm saturated output power and 22.4% power added efficiency (PAE). The chip occupies an area of 0.88 × 0.62mm2, including all the dc and RF pads.