An explanation for invalidity of working currents' derating on improving light-emitting diode devices' reliability

With the emergence of new color-mixing LED systems based on LED devices of different color temperatures, the need for a new modeling technique for LED systems with nonidentical LED devices becomes imminent. This paper presents a modeling tech- nique for LED systems with LED arrays comprising nonidenti- cal LED devices that have nonidentical optical-thermal-electrical properties. Based on a general 3-D photo-electro-thermal LED node model, LED devices of different kinds can be arranged in var- ious array forms according to their system construction and design. By linking the system matrix to the correlated-color-temperature prediction, the proposed modeling technique provides an accu- rate prediction of the temperature distribution, luminous flux, and correlated color temperature of the LED systems. The tempera- ture distribution and light output of the LED systems have been measured using an infrared imaging system and a spectrophoto- colorimeter with an integrating sphere. The modeling technique has been successfully demonstrated and experimentally verified on several LED systems comprising nonidentical LED devices. It is particularly useful as a modeling tool to study new color-mixing LED systems based on different types of LED devices. Index Terms—Correlated color temperature (CCT), light- emitting diodes (LED), lighting system, nonidentical LEDs, photo- electro-thermal (PET), thermal model.

The efficiency of light-emitting diode (LED) devices is a significant factor that reflects the capability of these devices to convert electrical power into optical power. In this study, a method for estimating the efficiency of LED devices is proposed. An efficiency model and a heat power model are established as convenient tools for LED performance evaluation. Such models can aid in the design of LED drivers and in the reliability evaluation of LED devices. The proposed estimation method for the efficiency and heat power of LED devices is verified by experimentally testing two types of commercial LED devices.

The fabrication of supramolecular light-harvesting systems (LHS) with sequential energy transfer is of significance in utilizing light energy. In this study, we report the non-covalent self-assembly of a sequential LHS by pillar[5]arene-based host-guest interaction in water and its applications in white light-emitting diode (LED) device and latent fingerprint imaging. The host-guest complex WP5 G self-assembles into nanoparticles in water and shows enhanced aggregation-induced emission (AIE) effect. The nanoparticles can be further used to construct sequential LHS with fluorescent dyes 4,7-di(2-thienyl)-benzo[2,1,3]thiadiazole (DBT) and sulforhodamine 101 (SR101). Impressively, the system shows white-light emission when the molar ratio of WP5 G/DBT/SR101 is 1100/2/16. The material can be coated on a LED bulb to achieve white-light emission. In addition, the sequential LHS exhibit multicolor fluorescence including red emission, which have been successfully applied to high-resolution imaging of latent fingerprints. Therefore, we demonstrated a general strategy for the construction of sequential LHS in water based on macrocyclic host-guest interaction and explored its multi-functional applications in white-light LED device and imaging of latent fingerprints, which will promote future development and application of supramolecular LHSs.

We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm−2 is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10−4, 1.6 × 10−4, and 6.4 lm W−1 of PE, and 1.3 × 10−4, 2.9 × 10−4, and 12 cd A−1 of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively.

With a long experience in optoelectronics, CEA-LETI has focused on Light Emitting Diode (LED) lighting since 2006. Today, all the technical challenges in the implementation of GaN LED based solid state lighting (SSL) are addressed at CEA-LETI who is now an RandD player throughout the entire value chain of LED lighting. The SSL Line at CEA-LETI first deals with the simulation of the active structures and LED devices. Then the growth is addressed in particular 2D growth on 200 mm silicon substrates. Then, technological steps are developed for the fabrication of LED dies with innovative architectures. For instance, Versatile LED Array Devices are currently being developed with a dedicated μLED technology. The objective in this case is to achieve monolithical LED arrays reported and interconnected through a silicon submount. In addition to the required bonding and 3D integration technologies, new solutions for LED chip packaging, thermal management of LED lamps and luminaires are also addressed. LETI is also active in Smart Lighting concepts which offer the possibility of new application fields for SSL technologies. An example is the recent development at CEA LETI of Visible Light Communication Technology also called LiFi. With this technology, we demonstrated a transmission rate up to 10 Mb/s and real time HD-Video transmission.

Light emitting diodes (LED) and laser diodes (LD) based on III-Nitrides emitting in visible spectrum have seen an interesting advance these last few years. Here, we present a simulation study of a multi quantum well MQW InGaN/GaN light emitting diode LED, where the diode active region is formed by a series of several periods of InGaN quantum wells (QWs) and GaN quantum barriers (QBs). We will, first, present free carriers distribution within LED active region and device electroluminescence under forward polarisation. We will, secondly, see indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on LED optical properties.

Filling the cyan gap toward full-visible-spectrum LED lighting with Ca2LaHf2Al3O12:Ce3+ broadband green phosphor

This paper presents a dynamic photo-electro-thermal theory for LED systems. In addition to photometric, electrical and thermal aspects, this theory incorporates the time domain into the generalized equations. A dynamic model for a general LED system is developed for system analysis. This theory highlights the fact that the luminous output of an LED system will decrease with time from the initial operation to the steady-state due to the rising temperature of the heatsink and the LED devices. The essential thermal time constants involved in the LED systems are explained. The time factor is critical in understanding how much the luminous output will decrease with time and is essential to the optimal designs of LED systems that are operated continuously (e.g general lighting) or momentarily (e.g. traffic lights). Experiments on several LED systems at different time frames have been conducted and the practical measurements confirm the validity of this theory.

Metalorganic vapor phase epitaxial (MOVPE) growth of GaN on nanopatterned AGOG sapphire substrates was performed, and characteristics of the light-emitting diode (LED) devices grown on patterned sapphire and planar substrates were compared. The nanopatterned sapphire substrates were fabricated by a novel process (AGOG) whereby aluminum nanomesas were epitaxially converted into crystalline Al2O3 via a two-stage annealing process. The GaN template grown on the nanopatterned sapphire substrate was done via an abbreviated growth mode, where a 15-nm thick, low-temperature GaN buffer layer was used, without the use of an etch-back and recovery process during the epitaxy. InGaN quantum wells (QWs) LEDs were grown on the GaN template on the nanopatterned sapphire, employing the abbreviated growth mode. The optimized InGaN QW LEDs grown on the patterned AGOG sapphire substrate exhibited a 24% improvement in output power as compared to LEDs on GaN templates grown using the conventional method. The increase in output power of the LEDs is attributed to improved internal quantum efficiency of the LEDs.

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It is found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is ∼1012 cm−2, which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 °C and increases by two orders of magnitude when the temperature is reduced to 600 °C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 1018 cm−3 in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.

This study presents the development of a high power (15 W) chip on board (COB) type package with multiarray module for 200 W light emitting diode (LED) lamp system. The LED device is COB package that is mounted directly on the metal PCB to reduce thermal resistance from the chip to PCB. Numerical simulation was performed to investigate the maximum junction temperature of the LED package by using the computational fluid dynamics solver, FLOTHERM V.9·2. The simulation result was compared to the experimental data. The influences of various operational conditions such as dissipation power, the number of chip arrays and the orientation of heat sink on the junction temperature were discussed. Efficient methodologies of reducing the junction temperature were also proposed in this study. This paper presents a simple algorithm to predict the thermal resistance/junction temperature of the high power LED module. The results provide useful information for the optimum design of the heat sink and the development of multiarray modules.

청색 발광다이오드(LED) InGaN/GaN의 방사 피크 파장에 따른 LED 소자의 성능 저하를 광학적 및 전기적 특성을 고려하여 조사하였다. 방사 피크 파장이 437~452 nm인 LED 소자에 전류를 각각 60 mA, 75 mA, 그리고 90 mA로 구동하여 장시간 동안 스트레스를 주었다. 형광체의 유무에 따라서 LED 소자의 광 감쇠 특성을 관측하였다. 형광체가 없는 소자의 광 감쇠 특성은 피크 파장이 단파장일수록 급속하게 떨어진다. 형광체가 있는 소자는 형광체가 없는 것보다 감쇠 특성이 둔감해진다. 전기적 특성은 방사 피크 파장에 의존하지 않고, 스트레스 시간에 따른 LED의 내부 저항이 서서히 증가하는 현상으로 나타난다. 피크 파장에 따른 외형변화는 동일 전류 조건에서 단파장일 때 열화현상이 심하게 발생한다. 이는 청색 발광다이오드에서 발생한 빛의 파장이 단파장영역으로 갈수록 칩 외의 재료에서 단파장 광 흡수가 증가하여 열화현상이 가속화되는 것으로 분석된다. 따라서 LED 소자의 장수명을 얻기 위해서는 청색 칩의 방사 피크 파장과 소자재료의 광 열화해석이 중요하다. The dependance of degradation on the blue-peak wavelength is investigated with the blue light-emitting diode (LED) of InGaN/GaN with respect to the optical and the electrical characteristics of the devices. The LED devices emitting the blue-peak wavelength ranging from 437 nm to 452 nm is prepared to be stressed for a long aging time with three different currents of 60 mA, 75 mA and 90 mA, respectively. The degradation of optical intensity is observed with and without phosphor in the devices. The device without phosphor has been degraded significantly as the wavelength of blue-peak is decreased while the optical intensity of LED device with phosphor become less sensitive than that of device without phosphor. The electrical property does not depend on the emission peak wavelength. However, the series-resistance of LED device is slowly increased as the aging time is increased. The deformation of device is observed severely the short wavelength of blue-peak even with the same current since the short wavelength is absorbed substantially at the materials of device during the aging time. Consequently, in order to enhance the lifetime of LED devices, it is important to understand the optical degradation property of the materials against the specific wavelengths emitted from the blue chip.

This paper is on a novel use of lighting or signaling devices constructed by light-emitting diodes (LEDs) as a positioning beacon. The idea is that the surface of the LED lighting device is divided into regions and used to show different visual patterns that are not noticeable by the human eye due to the high-frequency switching of the LEDs. A digital camera is used as a receiver to capture a sequence of images of the LED positioning beacon transmitter. Image-processing algorithms are used to decode the location code that is encoded in the visual patterns transmitted by the LED device. This idea can be applied to any LED traffic lights or signaling devices on the road and turn them into parts of a positioning beacon system. Such a system made up of high-brightness visible LEDs can provide the function of open-space wireless broadcasting of the positioning signal. The LED signaling method, transmission protocol, camera frame rate, LED flash rate, together with an implemented system and the experimental results, are presented in this paper.

Home-use light-emitting diodes (LEDs) are attracting growing attention regarding their anti-aging effects. Although most previous studies on the use of LED devices as a form of low-level laser therapy reported no significant adverse events, questions regarding the safety of using a light source on secretory tissues have been raised. This study aimed to assess the safety and efficacy of a home-use LED device for neck skin rejuvenation, particularly regarding its effect on thyroid gland morphology and function. Thyroid function tests and ultrasonographic analyses showed no significant changes after 16 weeks of LED use. Evaluation using the Lemperle wrinkle scale and global improvement scales by both investigators and subjects showed significant improvement after 16 weeks of daily application, as well as 8 weeks after discontinuation. Biophysical parameters, such as hydration, elasticity, and density, also showed significant improvements. Hence, the long-term use of the LED device was safe and effective for neck rejuvenation, and showed no significant side effects on the adjacent thyroid and parathyroid glands.

In this study, the growth of GaN-films-based light emitting diodes(LEDs), have been clearly demonstrated on wet-etching patterned sapphire substrate (PSS) and conventional LEDs. The wet-etching PSS LED device showed a significantly higher performance than the conventional LED device. The wet-etching PSS LED device exhibited a leakage current of 9 mA under a bias of 8 V, an external quantum efficiency and output powers of 35.09 % and19.23 mW under 20 mA injection current as compared to 12 mA, 27.23%, and 15.02 mW of the conventional LED device.