Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation

Random Access Memories: Magnetic

Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies on the effects of ionizing radiation on the STT-MRAM writing process are lacking for MTJs with perpendicular magnetic anisotropy (pMTJs) required for scalable applications. Particularly, the question of the impact of extreme total ionizing dose on perpendicular magnetic anisotropy, which plays a crucial role on thermal stability and critical writing current, remains open. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale pMTJs used in STT-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the current-induced switching before and after irradiation. Our results demonstrate that all these key properties of nanoscale MTJs relevant to STT-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. These results indicate that nanoscale MTJs are promising building blocks for radiation-hard non-von Neumann computing.

The Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been identified, by the International Technology Roadmap for Semiconductors (ITRS), as one of the most promising emerging technology. Different works handled the retention and reliability of STT-MRAM. However, to the best of our knowledge, the impact of a pulsed laser beam on STT-MRAM reliability and security has not been investigated so far as proposed in this paper. Since STT-MRAM are Back-end Of Line devices, we exposed the bit cells from the front-side to a 1064 nm wavelength laser pulse. The devices are electrically characterized (switching conditions between the two logical states) before and after the laser irradiation. The main result of this study is the demonstration of a resistance switching from Anti-Parallel (AP) to Parallel (P) state after the laser irradiation. That is how data integrity was altered by this irradiation, flipping the bit stored in this memory.

Spin transfer torque magnetic random access memory (STT-MRAM) is one of the most promising new non-volatile memory technologies. Recently, STT-MRAM has become popular as a DRAM alternative in main memories particularly for tablets and palmtop computers in part due to its non-volatile properties and potential for improved device scalability. However, STT-MRAM is well known for its asymmetric access properties and considerable attention has been applied to the device, circuit, and architecture designs to mitigate its write energy concerns. In this work, we propose a new method to reduce the write energy consumption using a combination of pulse width scaling and error correction coding schemes for STT-MRAM main memories. The introduced methodology works by dynamically adjusting the pulse width based on the compressibility of the written data. We evaluate the efficiency of the proposed method on Android applications. Experimental results show an average improvement of more than 10% in the write energy consumption, in addition to the 46% reduction achieved by compression.

The emerging spin-transfer torque magnetic random-access memory (STT-RAM) has attracted a lot of interest from both academia and industry in recent years. It has been considered as a promising replacement of SRAM and DRAM in the cache and memory system design thanks to many advantages, including non-volatility, low leakage power, SRAM comparable read performance and read energy consumption, higher density than SRAM, better scalability than conventional CMOS technologies, and good CMOS compatibility. However, the disadvantages of STT-RAM, such as higher write energy and longer write latency than SRAM, also bring design challenges. This paper introduces state-of-the-art architectural approaches to adopt STT-RAM in the cache and memory system design by taking advantage of the opportunities brought by STT-RAM as well as overcoming the challenges. © 2016 IEEE.

Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthroughs that have brought perpendicular STT-MRAM to the cusp of mass production.

One of the most promising emerging memory technologies is the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), due to its high speed, high endurance, low area, low power consumption, and good scaling capability. In this paper, we estimate the STT-MRAM cell reliability under fabrication- and aging-induced process variability, by evaluating its failure probability. We analyze the effect of control voltage tuning on the fresh and aged cell failure probabilities and, as a result, we propose a power- and aging-aware circuit level variability mitigation technique based on control voltage tuning. We observed that increasing the values of control voltages, the cell failure probability is reduced at different extends (according to the control voltage under variation), but also that the power consumption is increased. As a result, we have identified the control voltage with the highest impact on the fresh cell reliability, and on the endurance of the cell under study. Subsequently, by performing a power/reliability trade-off analysis, the appropriate value of this control voltage is determined.

In recent years, the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under today aggressive technology scaling requirements, the STT-MRAM is affected by process variability and aging phenomena, making reliability prediction a growing concern. In this paper, we provide a methodology for predicting the reliability of an STT-MRAM based memory at block level for different block sizes and access rates. The proposed methodology also allows for an exploration of required error correction capabilities as function of code word size to achieve the desired reliability target for the memory under study.

Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising emerging memory technology because of its various advantageous features such as scalability, non-volatility, density, endurance, and soft-error immunity. However, high write energy and long write latency are the major obstacles for this technology. The long write latency of the STT-MRAM is primarily due to two reasons. First, the bit-cell switching is asymmetric, which means that one write direction is significantly slower than the other. Second, the stochastic switching behavior of the bit-cell mandates a significant margin for a target write error rate (WER). In this paper, we propose static and dynamic circuit-level techniques to reduce the overall write latency. The static technique reduces the impact of write asymmetry by increasing the write current only for the slow writes. The dynamic technique additionally targets the write margin by dynamically increasing the write current in a stepwise manner to mitigate the negative impact of the stochastic switching behavior. Experimental results show that our proposed dynamic method can reduce the overall write latency by 71% while maintaining the same WER. Applying this technique to a 512 kB L2-cache of a microprocessor improves its performance by 11% and saves energy by 10% on average.

Spin Transfer Torque Magnetic RAM (STT-MRAM) is one of the most promising on-chip technologies, which delivers high density, non-volatility, and near-zero leakage power. However, Spin Transfer Torque Magnetic RAM (STT-MRAM) suffers from three reliability issues, namely, read disturbance, write failure, and retention failure, that present significant challenges to its use as a reliable on-chip memory. All of these three reliability challenges become even more threatening with any increase in STT-MRAM cell temperature. Write operations are regarded as the main source of heat generation and temperature increase in STT-MRAM on-chip memories. This article first presents experiments to show how the heat generated by consecutive writes affects the reliability of an STT-MRAM on-chip cache. Then, it proposes the WiSE framework, an approach to reduce the STT-MRAM-based cache memory temperature and improve its reliability. WiSE utilizes the Reinforcement Learning (Reinforcement Learning (RL)) technique to detect high-density write operation patterns in STT-MRAM cache. To manage the write operations across the STT-MRAM caches, WiSE introduces a new temperature-aware replacement policy. The simulation results show that while WiSE imposes only about 1% performance overhead, it improves retention failure rate, read disturbance rate and write failure rate by 64%, 57%, and 47%, respectively, compared to Least Recently Used (Least Recently Used (LRU)) replacement policy.

Due to the memory wall in conventional Von-Neumann computer architectures, the limited bandwidth between processors and memories has become one of the most critical bottlenecks to improve system performance. With the emerging of non-volatile memories, the computing-in-memory (CIM) paradigm has regained interest to tackle the issue at the architecture level. CIM can effectively alleviate the stress on the limitted bandwidth by performing logic operations within memories. However, CIMs are not yet studied carefully at the circuit level, and even its reliability and performance. In this paper, we proposed a CIM implementation: dual reference (DualRef) scheme at the circuit level within STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) array. Simulations were carried out to verify the functionality and assess the reliability and performance of DualRef scheme in terms of operation error rate, sensing margin, operation delay and dynamic energy consumption. Simulation results validate DualRef scheme and reveal that it is reliable to perform bitwise logic opertions within STT-MRAM while the TMR (Tunnel Magnetoresistance Ratio) varying between 100% and 300% and supply voltage Vdd varying from 0.9V to 1.2V. This work provides a robust circuitry scheme and design space to effectively implement CIM in STT-MRAM.

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The magnonic pulses are used to destabilize the magnetic free layer from its initial direction, and are followed immediately by a bipolar electric current exerting conventional spin-transfer torque on the free layer. The combination of thermal and electric currents greatly reduces switching errors, and simultaneously reduces the electric switching current density by more than an order of magnitude as compared to conventional STT-MRAM. The energy efficiency of several possible electro-thermal circuit designs have been analyzed numerically. As compared to STT-MRAM with perpendicular magnetic anisotropy, magnonic STT-MRAM reduces the overall switching energy by almost 80%. Furthermore, the lower electric current density allows the use of thicker tunnel barriers, which should result in higher tunneling magneto-resistance and improved tunnel barrier reliability. The combination of lower power, improved reliability, higher integration density, and larger read margin make magnonic STT-MRAM a promising choice for future non-volatile storage.

Spin transfer torque magnetic random access memory (STT-MRAM) is an emerging memory technology which exhibits nonvolatility, high density, high endurance, and nano-second read and write times. These characteristics make STT-MRAM suitable for last-level cache and other embedded applications. The STT-MRAM bit-cell consists of a magnetic tunnel junction (MTJ) which is composed of two ferromagnetic layers (free and fixed layers) and one insulating layer in between. As STT-MRAM arrays become denser to meet cost and requirements of high performance computing, the distance between adjacent MTJ bits reduces. This aggravates the magnetic coupling from free and fixed layer of one MTJ bit to its neighbors. Even though magnetic coupling is expected to become stronger as MTJ scales down, its impacts on static and dynamic properties on MTJ is relatively unexplored. In this paper, we present a model of the magnetic field coupling in high-density MTJ arrays for three different types of MTJ stacks and evaluate the effect of magnetic field induced coupling on static and dynamic properties. Lastly, we show how process induced variations in MTJ characteristics affect the magnitude of magnetic coupling and their effect on the electrical characteristics of the STT-RAM arrays.

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is an emerging non-volatile memory technology, as a leading candidate to replace conventional on-chip memories due to its various advantages such as high density, non-volatility, scalability, high endurance and CMOS compatibility. However, read and write operations in STT-MRAM are extremely vulnerable to manufacturing variations. In particular, the read operation is becoming more susceptible to failures since the read timing and read-disturb failures have conflicting requirements of read period. To overcome this issue, we propose a technique to reduce the read period without sacrificing the target reliability requirements. The reduced read period, in turn, results in improved read performance and reduced read-disturb rates. The results show that using this technique, the read period can be reduced by 50%, and the read-disturb probability by 51%.

Spin-transfer torque magnetic random access memory (STT-RAM) technology has emerged as a potential replacement of SRAM in cache design, especially for building large-scale and energy-efficient last level caches. Compared with single-level cell (SLC), multi-level cell (MLC) STT-RAM is expected to double cache capacity and increase system performance. However, the two-step read/write access schemes incur considerable energy consumption and performance degradation. In this paper, we propose two techniques using data compression to optimize MLC STT-RAM cache design. The first technique tries to compress a cache line and fit it into only the soft-bit region of the cells, so that reading or writing this cache line takes only one step which is fast and energy-efficient. We introduce a second technique to increase the cache capacity by enabling the left hard-bit region to store another compressed cache line, which can improve the system performance for memory intensive workloads. The experimental results show that, compared with a conventional MLC STT-RAM last level cache design, our overhead minimized technique reduces the dynamic energy consumption by 38.2% on average with the same system performance, and our capacity augmented technique boosts the system performance by 6.1% with 19.2% dynamic energy saving on average, across the evaluated multi-programmed benchmarks.