Critical Dimension Patterning Using SPL

This paper reports on an image processing algorithm for simultaneous photometric correction and defect detection in semiconductor manufacturing. We note that this problem has some resemblance to change detection in real time image analysis. In particular, the changes between the two images are analogous to the defects in our machine vision system. We therefore applied several detection methods and examined their applicability to defect detection. We first performed a sub-pixel image registration, using a phase correlation method together with a singular value decomposition factorization of the correlation matrix to compute the necessary alignment. We then tested a few change detection methods, including the shading model, derivative model, statistical change detection, linear dependence change detector and Wronskian change detection model. We subjected this system to our collection of raw data acquired from an industrial system, and we evaluated the different methods with respect to the detection accuracy, robustness, and speed of the system. We have promising results at this stage, especially in detecting the blob and line defects that are most commonly found, and when the lighting variation is within a certain threshold.

Raman Microprobe Spectroscopy has been used in research laboratories to model the growth of thin film silicide layers and the re-crystallization of α-silicon, however little progress has been made towards using these techniques as either at line or on line tools.At line and on line instrumental techniques such as ellipsometry and X-Ray Fluorescence have been used to characterize the physical properties of thin films in the semiconductor industry, which has lead to improvements in device yields. These techniques, however, do not provide the specificity to determine thin film phase changes which result in improved device performance, whereas Raman Microprobe Spectroscopy can monitor these changes.In order to perform at line or on line measurements, the spectrometer must be moved to the process line floor. The recent improvements in spectrometer design which has produced systems robust enough to endure high technology manufacturing environments will be briefly discussed. Two case studies of semiconductor process monitoring via Raman Microprobe analysis will be presented.

Industrial alarm system management and enhancement have recently become a subject of high interest in the industrial domain as well as in the scientific research area. Alarm system performance is the key point to look at for the examination of whether they work correctly. Few research papers so far have focused on the semiconductor manufacturing process area. This paper summarizes some interesting work applied not long ago in other industries and especially those adapted to semiconductor manufacturing. It represents a concise description of semiconductor manufacturing processes, toward an understanding of the problems and challenges encountered. Furthermore, a basic statistical analysis employed to show some of alarm system performance metrics that have used, as shown in some well-known standards, to assess an alarm system performance as well as highlighting misconfigured alarms based on their recorded histories.

This chapter discusses the application of scanning and transmission electron microscopy techniques, X-ray microscopy, as well as scanning probe microscopy for physical failure analysis. With the scaling-down of transistor features and interconnect dimensions and with the introduction of new processes and materials, physical failure analysis becomes more and more an essential task to exclude both yield-limiting process irregularities and reliabilityrelated failures in the semiconductor industry. Advanced imaging tools and techniques are needed to ensure high manufacturing yield and product reliability. Physical failure analysis is an essential task to exclude both yield-limiting process deviations and reliability-related failures in integrated circuit (IC) manufacturing industry. Its goal is to determine the root cause of failures or parameter deviations as a prerequisite for corrective actions. Polysilicon Gate Roughness, control of the transistor gate critical dimension with nanometer accuracy is a top priority task for leading-edge IC manufacturing.

The use of infrared spectroscopy for production semiconductor process monitoring has evolved recently from primarily unpatterned, i.e. blanket test wafer measurements in a limited historical application space of blanket epitaxial, BPSG, and FSG layers to new applications involving patterned product wafer measurements, and new measurement capabilities. Over the last several years, the semiconductor industry has adopted a new set of materials associated with copper/low‐k interconnects, and new structures incorporating exotic materials including silicon germanium, SOI substrates and high aspect ratio trenches. The new device architectures and more chemically sophisticated materials have raised new process control and metrology challenges that are not addressed by current measurement technology. To address the challenges we have developed a new infrared metrology tool designed for emerging semiconductor production processes, in a package compatible with modern production and R&D environments. The tool incorporates recent advances in reflectance instrumentation including highly accurate signal processing, optimized reflectometry optics, and model‐based calibration and analysis algorithms. To meet the production requirements of the modern automated fab, the measurement hardware has been integrated with a fully automated 300 mm platform incorporating front opening unified pod (FOUP) interfaces, automated pattern recognition and high throughput ultra clean robotics. The tool employs a suite of automated dispersion‐model analysis algorithms capable of extracting a variety of layer properties from measured spectra. The new tool provides excellent measurement precision, tool matching, and a platform for deploying many new production and development applications. In this paper we will explore the use of model based infrared analysis as a tool for characterizing novel bottle capacitor structures employed in high density dynamic random access memory (DRAM) chips. We will explore the capability of the tool for characterizing multiple geometric parameters associated with the manufacturing process that are important to the yield and performance of advanced bottle DRAM devices.

For a case-study of a wafer scanner from the semiconductor industry it is shown how model checking techniques can be used to compute (1) a simple yet optimal deadlock avoidance policy, and (2) an infinite schedule that optimizes throughput. in the absence of errors. Deadlock avoidance is studied based on a simple finite state model using Smv, and for throughput analysis a more detailed timed automaton model has been constructed and analyzed using the Uppaal tool. The Smv and Uppaal models are formally related through the notion of a stuttering bisimulation. The results were obtained within 2 weeks, which confirms once more that model checking techniques may help to improve the design process of realistic, industrial systems. Methodologically, the case study is interesting since two models were used to obtain results that could not have been obtained using only a single model.

Impact of proximity correction on device yield in electron-beam definition of MSM-detectors

Chemical hazards in the semiconductor industry are reviewed with regard to occupational health and safety concerns. Exposure potentials are summarized for each step in the development and processing of semiconductor devices. The hazards associated with replacement substitutes for III-V compounds are also presented. Risk assessment of the hazards involved in these processes requires that redundant control technology be employed. Controls in semiconductor research and development are reviewed with emphasis on those processes and equipment most often involved in losses in the semiconductor industry. These include limiting orifices on compressed gas cylinders, a ventilated gas cabinet for storage of compressed gases, dedicated exhaust risers, exhaust flow sensors, multipoint gas monitoring systems, interlocked devices for exhaust and power failure, smoke and fire detection, and fire suppression. >

Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a 28Si/28SiO2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.

The 3D-AFM technique is a very well known technique as a non destructive reference to calibrate CD-SEM and Scatterometry metrology. However, recent hardware, tip design and tip treatment improvements have offered to the technique new capabilities that pave the way for multiple applications in the semiconductor industry. The 3D-AFM technique is today not only a calibrating technique but also a process control technique that can be use either at the R&D level or in fab environment. In this paper, we will address the limits of the 3D-AFM technique for the semiconductor industry depending on the applications by focusing our study on tip to sample interactions. We will identify, test and validate potential industrial solutions that could extend the 3D-AFM potentialities. Subsequently, we will show some interesting applications of the technique related to LER/LWR transfer during silicon gate patterning and related to advance multiwires devices fabrication.

In this work, we present an attractive and novel fabrication technique that can produce highly-controlled silicon-based nanostructures in wafer-scale by a seldom used material in IC fabrication, amorphous silicon (α-Si), as an etch mask. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate various Si-based nanostructures. It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls. SiO2 nanostructures directly fabricated can be served as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate or other dielectric materials to form electrically functional nanostructures and devices. Several typical Si-based nanostructures, such as nanoline, nanofin and transistor gate patterning, have been fabricated successfully using the simple α-Si material combining with electron beam lithography. Our results demonstrate that the Si-based nanostructures as small as sub-20 nm may be achievable. More significantly, the novel approach is a potentially universal method that is fully compatible with the current existing Si-based CMOS technologies.

In this paper we show that the problem of intrafield line width variations can be effectively solved through a novel application of alternating phase-shifting mask (PSM) technology. To illustrate its advantages, we applied this approach to produce 140 nm transistor gates using DUV (248 nm wavelength, KrF) lithography. We show that: systematic intrafield line width variations can be controlled to within 10 nm (3 (sigma) ), and variations across the wafer held to within 15 nm (3 (sigma) ), with a target k1 factor of K1 equals 0.237 (140 nm target gate lengths).

The study focused on "Deciphering the role of molecular interactions on the interfacial structure of aqueous and non-aqueous interfaces" holds immense significance in diverse scientific and industrial domains. Our primary objective is to unravel the intricate web of molecular interactions occurring at the boundaries between aqueous and non-aqueous phases. The research presented here spans a wide scope, encompassing applications in microelectromechanical systems in the semiconductor industry, energy-efficient membranes for electrochemical separations, and renewable energy storage systems. Molecular dynamics simulations were conducted in collaboration with experimental studies, specifically atomic force microscopy, to achieve insights at the molecular level.The first project centered around comprehending the heterogeneous assembly of water vapor at the solid/vapor aqueous interface in the presence of self-assembled silane molecules. The self-assembly of nano-sized molecules on surfaces at ambient temperature has a technological interest in the design of microelectromechanical systems (MEMSs). Through atomic force microscopy (AFM) and reactive molecular dynamics simulations, a comprehensive understanding of interfacial chemistry was achieved, encompassing the mechanism and the parameters governing the water-driven assembly of trifunctional octadecyltrichlorosilane (OTS) at the solid/vapor aqueous interface. The second project presents the electrode/electrolyte simulations of sodium/glyme-based batteries. Sodium-ion batteries are considered the next generation of large-scale energy storage devices for sustainable development and still need improvements for commercialization. The electrode/electrolyte interface highly affects the battery performance. Sodium ion solvation structures at the interface between electrodes and electrolytes are studied using polarizable carbon electrodes and different glymes with NaTFSI as the electrolyte. The third project presents molecular dynamics simulation studies on ion-conducting polymer electrolytes, which show promising applications in electrochemical separation processes in collaboration with experimental research. Molecular dynamics simulations on polymer electrolytes with different side chain chemistries, ranging from hydrophobic alkyl side chains, to hydrophilic alkoxy and even zwitterionic side chains, were performed to gain insight into the ionic conduction mechanisms of the counterion in these systems. By comprehending the role of molecular interactions at these aqueous and non-aqueous interfaces, we are poised to develop innovative solutions, optimize processes, and drive forward technological advancements that rely on a fundamental understanding of interfacial phenomena.

High performance motion systems in the semiconductor industry can achieve higher tracking accuracy when the structural dynamics of the system are taken into account. This work proposes an LTV feedforward control scheme which is based on the approximation of the system dynamics at low frequencies. The plant approximation contains both the low frequency contribution and resonance dynamics of the dominant modes. As an example of a flexible structure, the damped Euler-Bernoulli beam is investigated with considering the stable inversion of the approximated plant for feedforward control design. The results show a remarkable increase in positioning accuracy of the system being the consequence of the presence of feedforward control forces even when the reference setpoint accelerations equal zero.

In the modern world, computing is essential in all aspects of manufacturing activity. Computers have brought to life terms like artificial intelligence, and have played a critical role in reinvention of manufacturing industry. In continuing quest to decrease the interval time between conceptualization of a product, information technology has been fused with manufacturing practice. This paper describes the use of expert system shell to develop a rule-based expert for an auto wire bond machine fault diagnosis system for hi-tech semiconductor industry. The main aim of the expert fault diagnosis system is to diagnose the problem of auto wire bond machine. In semiconductor industry, production equipment and machine have depended heavily on the use of human expertise for maintenance and it is costly. Without an expert system, his/her experience is lost when human is unavailable. With the developed expert system, the diagnosis process for the auto wire bond machine is standardized and accuracy will be increased compared to the conventional way. Therefore, the quality of products that are produced will improve. The constrains values for the fault diagnosis are based on design data and experience of the engineer. The expert fault diagnosis system is to improve bonding quality by reducing the production yield loss.