Dual-cavity feedback assisted DFB narrow linewidth laser

Single longitudinal mode (SLM) lasers are important tools for many scientific and commercial applications. SLM operation can be achieved in distributed-feedback (DFB) lasers based on Bragg structures. Semiconductor waveguide DFB lasers are well-established devices, but their output power is limited to a few hundred milliwatts. DFB lasers have also been demonstrated in dielectric waveguides. However, in this case the output power was even lower. Here we present the first monolithic Yb:YAG DFB laser. The waveguide and the DFB structure were fabricated in the volume of an Yb:YAG crystal by ultrafast laser inscription. The DFB laser delivered 2W of output power at a slope efficiency of 61% in SLM operation under pumping with an optically pumped semiconductor laser. This power level outperforms previously demonstrated dielectric DFB waveguide lasers by nearly an order of magnitude. Our approach paves the way for compact, robust, and highly efficient high-power SLM laser sources.

A statistical yield analysis is presented for gain- and index-coupled distributed feedback (DFB) laser structures, allowing a comparison of their single longitudinal mode (SLM) yield capabilities. For the yield calculations, the threshold gain difference and the longitudinal spatial hole burning (SHB) are taken into account. By comparing the experimental and theoretical yield of index-coupled DFB lasers, the significance of SHB for correct yield predictions is illustrated. For the purpose of comparison, yield calculations for various lambda /4-shifted DFB lasers (with low facet reflectivities) are presented. The most emphasis, however, is on partly gain-coupled DFB lasers. Estimations of practical gain coupling coefficient values for gain and for loss gratings are discussed. >

In this paper, we present the theoretical investigation of index-coupled distributed feedback (DFB) laser with tilted single mode ridge waveguides. By tilting part of the ridge waveguide in various degrees, DFB laser with manifold effective grating periods can be realized. The structure is analyzed using couple mode theory in matrix form based on threshold analysis. Important parameters of DFB laser like resonant frequency and threshold gains are obtained by solving the eigen-equation. The results indicate not only that the lasing frequency is modulated by the waveguide titling angle, but also large Gain Margin (GM) can be achieved at the threshold condition which enhance the stable single mode operation in index-coupled DFB laser.

We propose a new kind of distributed feedback (DFB) semiconductor laser based on the sampled Moire grating (SMG) integrated with a grating reflector (GR). Coupling coefficient along the laser cavity can be controlled, and $\pi $ phase shift ( $\pi $ -PS) can be introduced by SMG. The GR, which is a uniform sampled grating, can provide light reflection instead of high reflection (HR) facet coating. Thus, the front and rear facets are both coated with anti-reflection coatings (AR/AR) to avoid the influence of random grating phase at the HR facet. Therefore, more output power, better single longitudinal mode (SLM) operation, and higher wavelength precision can be simultaneously achieved, compared with traditional DFB lasers with AR/HR facet coatings. As an example, an 8-channel DFB laser array based on the proposed structure has been simulated. The proposed laser may benefit the applications requiring both high output power and wavelength precision, such as wavelength division multiplexing (WDM) transmission systems and gas sensors.

Distributed feedback (DFB) semiconductor laser arrays operating at precisely controlled wavelengths are important components for wavelength division multiplexing networks. Recently, precise wavelength control has been realized by the reconstruction-equivalent-chirp (REC) technique based on sampled Bragg gratings (SBGs) [1]. However, the effective coupling coefficient, κ, of a sampled grating is necessarily reduced substantially from that of a uniform grating, compromising the single longitudinal mode (SLM) performance of DFB lasers. To overcome this, designs of SBGs with phase shifted grating sections have been proposed and demonstrated in fibre lasers. In these structures, the (not required) zeroth-order mode is suppressed while the index modulation experienced by the nonzeroth-order channels is enhanced, the ±1st order channels being of particular interest [2]. Here, for the first time, we apply a combination of π-phase shifted gratings with the REC technique to DFB diode lasers. Using a single electron beam lithography (EBL) step we have demonstrated an increased effective coupling coefficient κ and have fabricated an eight-channel laser array with a spacing of 100 GHz (∼0.8 nm @1550 nm). For the same channel spacing using conventional 0th order gratings (Fig. 1(a)), a resolution of about 0.125 nm would be required, which is beyond the typical resolution limit of 0.5 nm of EBL machines.

In this paper we present an experimental analysis of the effect of RF modulation injection current in DFB and FP lasers nearthe first period doubling bifurcation (PDB). By increasing the amplitude of the modulation frequency at the onset of PDB thefirst results of a virtual Hopf phenomenon like behavior has been observed in both types of lasers. We characterized thisobservation by increasing the amplitude of the current modulation where two peaks appear in the spectrum, approaching oneto the other until fmally merging the onset of period doubling bifurcation as predicted by theory. The same virtual Hopfbehavior was observed when we set the amplitude modulation at a fixed value and we sweep the frequency modulation at theonset of the PDB point.Keywords: Laser Diode, Nonlinear Dynamics, Period Doubling Bifurcations. 1. INTRODUCTION Nonlinear dynamics in diode lasers has been the subject of many theoretical and experimental investigations in the lastdecade as they show a rich variety of irregular behavior in their route to chaos1. A single frequency diode laser is commonlystudied by a rate equation model which describes the time evolution of the photon and carrier densities. In these equations,the inclusion of an additional degree of freedom as modulation of the injection current, external light injection or opticalfeedback is needed for nonlinear dynamics to appear2.To our knowledge, the nonlinear behavior in semiconductor diode lasers has been extensively studied by many authors usingdelayed optical feedback and strong current modulation. In the former, the observed route to chaos was through successivesubharmonic bifurcations or by quasi periodic route3'4. In the strong current modulation case the period sequence wastruncated by period tripling before the onset of chaos5'6.On the other hand, the onset of a period doubling bifurcation point in many physical systems brings to nonlinear phenomenasuch as: 1) small signal amplification, 2) shift and suppression of the bifurcation point and 3) the emergence of a closelyspaced set of peaks in the frequency response7.In semiconductor lasers the parametric amplification was observed by Harth and co-workers8'9 which was analyzed byWiesenfeld few years after'°. In the study developed by Wiesenfeld in ref. 10, semiconductor lasers were proposed as goodcandidate to study the rich variety of nonlinear phenomena near period doubling bifurcations. A recent study has shown thatthe effect of Langevin noise in period doubling semiconductor lasers has a virtual Hopf ur12 previously predicted byWiesenfeld'34 as a virtual Hopf phenomenon in systems undergoing a period doubling bifurcations in the presence ofexternal noise.In the present study we have experimentally investigated the nonlinear dynamics of diode lasers in the period doublingbifurcation point. We study the influence of the amplitude modulation in Distributed Feedback (DFB) lasers near perioddoubling bifurcations. In Fabry-Perot (FP) lasers we performed as well the same study as DFB lasers and the analysis of thefrequency modulation near period doubling bifurcation. So in section II we described the experimental procedure for theonset of the first period doubling bifurcation performed in commercial DFB and FP InGaAsP diode lasers at 1,3 tm emission

We report high slope efficiency and low noise characteristics in a distributed feedback (DFB) laser lasing at 1.3 /spl mu/m with narrow beam divergence by employment of a laterally tapered active stripe over the whole cavity. This tapered structure is designed to realize narrow beam divergence, low threshold current, and high longitudinal mode selectivity. The fabricated tapered-active-stripe DFB lasers demonstrated of 9.20/spl times/13.40 and a record slope efficiency, for a narrow beam DFB laser, of 0.59 mW/mA. The temperature characteristics from -10/spl deg/C to 85/spl deg/C shows high output power at high temperature, stable single longitudinal mode oscillation and stable far-field patterns. Furthermore, for the first time ever, a low relative intensity noise characteristic of under -155 dB/Hz has been realized when butt-coupling into a single-mode fiber.

By splitting the electrical contact of a conventional distributed feedback (DFB) laser into two sections, the frequency tuning characteristics of the DFB laser are modified and the DFB two-mode degeneracy becomes electrically controllable. As a result, novel device functions can be achieved. Several applications of two-electrode DFB lasers are described: (1) active single-mode stablization, (2) control of spectral reliability and wavelength chirp under amplitude modulation, (3) logic gate operations utilizing the DFB two-mode degeneracy for switching, routing, and optical computing, and (4) frequency modulation of the DFB laser for FSK coherent communication systems and optical sensing.

An analytic expression for the linewidth of distributed-feedback (DFB) lasers is derived. Local fluctuations in carrier density are shown to provide a significant contribution to laser linewidth in the presence of spatial holeburning. In a single-electrode DFB laser the effect can be avoided by careful optimization of the kl-product, but for a multielectrode DFB laser the linewidth can also be reduced by adjusting the injected current profile to compensate for spatial holeburning. Numerical results for a three-electrode lambda /4-shifted DFB laser are presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

A great improvement in the high-speed characteristics for compressively strained multi-quantum-well (MQW) distributed-feedback (DFB) lasers with self-aligned constricted mesa structures is described. Negative wavelength detuning is an important factor in making possible the extraction of potential advantages for the compressively strained MQW DFB lasers. A 17-GHz bandwidth, which is the highest among the 1.5- mu m MQW DFB lasers, is demonstrated. A wavelength chirp width of 0.42 nm at 10 Gb/s is obtained due to a reduced linewidth enhancement factor that has a magnitude of less than 2. Nonlinear damping K factor in a DFB laser with 45-nm negative detuning has drastically decreased to 0.13 ns, about half of that for unstrained MQW lasers. This is mainly due to an enhanced differential gain as large as 6.9*10/sup -12/ m/sup 3//s. The estimated intrinsic maximum bandwidth is 68 GHz. >

Distributed feedback (DFB) lasers are used extensively as optical sources within fiber optic telecommunications systems. These semiconductor lasers are valued for their single optical mode operation which enables their use in high bit rate digital and broadband analog transmission systems. We discuss requirements imposed upon DFB lasers used in such applications. We briefly review and illustrate general techniques for modeling DFB laser operation by comparison of measured and modeled device characteristics below and above lasing threshold. We focus on the phenomenon of spatial hole burning which substantially affects operation of all DFB lasers, especially those tailored to produce high fiber coupled power from a single mirror facet. We illustrate insights gained by measurement and modeling of DFB lasers using as an example the particular case of analog transmission of multichannel video signals.

The frequency-shift-keyed (FSK) modulation technique has been extensively studied in both direct1 and coherent detection systems. The main advantage of FSK modulation is that both the required modulation current and the resulting frequency chirp are small. This makes close optical channel spacing in an optical frequency-division-multiplexing (FDM) system feasible and therefore enables efficient use of the available bandwidth of a single-mode fiber. The disadvantage, however, is that the nonuniform low-frequency FM response of a single-section distributed-feedback (DFB) laser owing to thermal effect significantly limits the length of the data pattern.

591-Mb/s noncoherent FSK 2/sup 23/-1 PRBS transmission experiments using two different commercial standard DFB (distributed feedback) lasers and a phase-tunable DFB laser have been carried out. The commercial DFB lasers are modulated with an AMI (alternated mark inversion) code and the phase-tunable DFB laser with a NRZ (nonreturn to zero) code. With an optical filter bandwidth of 2.7 GHz, receiver sensitivities (for a 10/sup -10/ BER) of -38 dBm for the phase-tunable DFB laser and -36 dBm for both standard DFB lasers are achieved. The influence of optical filter bandwidth and modulation index on the BER is also evaluated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Several important applications in optical communications require high power fiber coupled laser sources operating at 1.3 /spl mu/m, 1.48 /spl mu/m and 1.55 /spl mu/m. Semiconductor diode lasers for these wavelengths can be fabricated using the InP/lnGaAsP material system. High power operation requires careful selection of the active region, p and n doping and the lateral waveguide structure. Additionally, distributed feedback (DFB) lasers require appropriate choice of grating feedback. High power, narrow linewidth and low noise single mode diode laser sources operating at 1.3 /spl mu/m and 1.55 /spl mu/m wavelengths have applications in cable television transmission systems, microwave photonics, interferometric sensors and as an alternative to diode-pumped solid state lasers. High output power is desirable to overcome losses in external modulators and for large scale distribution systems. It is particularly important for 1.3 /spl mu/m applications as reliable and efficient fiber amplifiers are not commercially available at this wavelength. 1.3 /spl mu/m DFB lasers with 440 mW chip power, over 150 mW fiber coupled power and 100 kHz linewidth have been demonstrated.

To our knowledge, this is the first report of a monolithically integrated distributed feedback (DFB) semiconductor laser array based on reconstruction-equivalent-chirp (REC) technology. A laser bar with 30 different lasers is obtained, lasing at 30 different wavelengths under single longitudinal mode. The typical threshold is about 40mA to 60mA. The typical slope efficiency is about 0.07 mW/mA to .13 mW/mA. Tested under the injection current of 100mA, the side mode suppression ratios (SMSR) range from 24.9dB to 46.8 dB, with an average of 37.2dB. The proposed method is presented in hoping to make a positive contribution to large-scale photonics integrated circuits (PIC) research for the next-generation fiber-optic networks.