Genetic algorithm based diode model prameters extraction

Genetic Algorithm Based Diode Model Parameters Extraction

A C++-based automatic executable program is implemented and provided in this article to integrate the current minus the short-circuit current, using the 3/8 integration rule, to compute the Co-Content function. The shunt ( Rsh ) and series resistance ( Rs ), photo ( Iph ) and saturation current ( Isat ), and ideality factor ( n ) (within the one-diode solar cell model) are then automatically calculated by the program, together with their standard deviations. When it is applied to simulated current voltage ( IV ) curves, the five solar cell parameters are extracted with less than 1% error, using only 26 points and in less than 1 s, in the case of noiseless IV curves, while in the case of 0.1% noise of the maximum current, less than 1% error is achieved with 51 points, and also in less than 1 s. The program is applied to measured IV curves in a commercial solar cell, and compared with the usual trapezoidal integration method and another method. All the solar cell parameters are reasonably extracted in under one second, whereas other techniques require at least 7 min.

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, I s , and barrier height, Φ b , were not noticeable after the irradiation. However, the series resistance, R s , has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant.

We report on the microelectronic characteristics of a novel hybrid heterojunction device based on a solution processable semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl)- co-(N,N0-diphenyl)-N,N′di(p-butyl-oxy-pheyl)-1,4-diamino-benzene) (PFB) and p-type silicon (p-Si). The PFB/p-Si heterojunction is prepared by spin coating 20 mg/mL solution of PFB in chloroform on the precleaned polished surface of p-Si substrate. Thermal evaporation of silver (Ag) electrode on top of PFB completes the fabrication of the Ag (90 nm)/PFB (180 nm)/p-Si heterojunction device. Morphology of PFB thin film is studied by using an atomic force microscope (AFM) and scanning electron microscope (SEM), which reveals grains are randomly distributed with slightly different grain sizes and shapes. It leads the film to form nonuniformity and some roughness in its topography that results in limiting the current (I) flow across the film/interface with p-Si. Ultraviolet (UV–vis) absorption and X-ray diffraction (XRD) spectra are measured for optical bandgap and crystal structure analysis of PFB. The key microelectronic parameters—rectification ratio (RR), ideality factor (n), barrier height (Φb), series resistance (Rs) and reverse saturation current (I0)—of the Ag/PFB/p-Si heterojunction are found from current–voltage (I–V) characteristics at room temperature (300 K) in dark conditions (≈0 lux). The Ag/PFB/p-Si heterojunction device exhibits improved microelectronic parameters when compared to those of earlier reported devices that were prepared in the same configuration. This improvement in the device parameters reveals enhancement in the microelectronic properties across the interface/depletion region of the Ag/PFB/p-Si device, which can be attributed to the remarkable electronic properties of PFB such as its relatively high hole mobility and better charge carriers’ conduction. The charge transport mechanisms through the device is also studied. Having the smaller values of I0 ≈ 7 × 10−10 A and n ≈ 3.23, as well as higher shunt resistance (Rsh) of 32 GΩ for the Ag/PFB/p-Si device suggest its potential for many electronic and optoelectronic applications.

\(\hbox {In/ZnIn}_{2}\hbox {Te}_{4}/\hbox {n-Si/Ag}\) diode structure was fabricated by the thermal deposition of a \(\hbox {ZnIn}_{2}\hbox {Te}_{4}\) thin film on n-Si wafer substrate with Ag metal back contact. The structural characteristics of the film were investigated in terms of composition, X-ray diffraction and topographic measurements. The diode structure was completed by evaporating In metal on the film surface as a top contact. The diode parameters as saturation current, barrier height, ideality factor and series resistance values were determined from the semi-logarithmic forward bias current–voltage characteristics of the diode. According to the assumption of the thermionic emission model, the ideality factor was found higher than unity and it was also observed that the barrier height and ideality factor showed a temperature-dependent profile resulting from the non-ideality in the current–voltage behaviour of the diode. As a result, the model was modified by considering inhomogeneous barrier formation and Gaussian distribution was expected to be dominant on 1.37 eV mean barrier height with a deviation of 0.18. In addition, the voltage dependence of these Gaussian diode parameters was investigated. The forward and reverse bias capacitance and conductance measurements showed that there was a slight change in capacitance values with frequency whereas the conductance values decreased with increase in frequency. In addition to the current–voltage analysis, the distribution of density of interface states and the values of series resistance were evaluated as a function of bias voltage and frequency.

The study on the semiconducting properties of herbal dye and various parameters of the herbal dye-based device is an important area of research in the coming days. In this work, we have measured the conductivity and Hall coefficient of turmeric dye in solid thin film form. Using the working principle of the Hall Effect, we have measured the Hall coefficient (HC) of this film. It is found that the curves of Hall voltage (VH) –Hall current (HC) and Hall voltage (VH) – Magnetic field (BH) are linear. The Hall coefficient has been estimated from these curves. The average value of the Hall coefficient (R) is 22.64 × 10-4 . The conductivity (σ) of the film is 1.5 10-10 m-1. We have estimated charge carrier density from this parameter, and its typical value is 2.8 23 m-3. We have also prepared a diode using this turmeric dye and extracted reverse saturation current, rectification ratio, ideality factor, series resistance, etc. It has been noticed that the diode exhibits high ideality factor and series resistance. The presence of traps is one of the main reasons for these high values. So, we have also measured the trapped energy of the device considering exponential trap distribution.

Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio

It is known that compound parabolic concentrators (CPCs) can improve electrical performance of a photovoltaic (PV) flat-plate system. However, a lumped electrical model of a PV cell/module with CPC for assessing performance under different operating conditions is unavailable. In this paper, a six-parameter based model is developed and applied to a PV cell, two PV models with CPC, and a PV module with 2D asymmetric CPC (trough). For validation, CPC with a single PV cell and two CPC modules with 2×2 and 9×9 PV cells are fabricated and measured in an indoor laboratory under standard test conditions. Results show that the optimised algorithm precisely predicts the six model parameters. A sensitivity analysis is performed to identify the importance of each parameter in the model. Ideality factor, circuit current and reverse saturation current are found to be the most dominant factor, while shunt resistance is the least important with CPC gain coefficient and series resistance are in between. Transient performance of a PV cell with CPC under variable outdoor climate conditions is also examined by coupling optical, thermal and electrical effects.

A nanostructured poly (o-toluidine)/silicon nanowires (NPOT/SiNWs) heterojunction has been fabricated with a low cost and simple techniques, where NPOT has been in situ polym- erized upon SiNWs synthesized by chemical etching of a silicon wafer. The morphology of SiNWs before and after deposition of NPOT has been examined by scanning electron micro- scope (SEM). The chemical composition of NPOT has been investigated by Fourier transform infrared (FTIR), ultraviolet-visible (UV-visible) spectroscopy, and X-ray diffraction (XRD) tech- niques. NPOT morphology has also been examined by SEM before being deposited on the SiNWs. I-V measurements of the device have been made at room temperature under dark con- ditions. The heterojunction diode parameters such as turn-on voltage, reverse saturation current (I0), ideality factor (η), barrier height (ΦB) and series resistance (Rs) have been determined from the I − V curves using Schottky equations. The device shows promising characteristics as a candidate for producing heterojunction diodes. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI. (DOI: 10

Organic and inorganic solar cells parameters evaluation from single I– V plot

Extracting dc parameters of solar cells under illumination

Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures

This paper presents Simulated Annealing based approach to estimate solar cell model parameters. Single diode solar cell model is used in this study to validate the proposed approach outcomes. The developed technique is used to estimate different model parameters such as generated photocurrent, saturation current, series resistance, shunt resistance, and ideality factor that govern the current-voltage relationship of a solar cell. A practical case study is used to test and verify the consistency of accurately estimating various parameters of single diode solar cell model. Comparative study among different parameter estimation techniques is presented to show the effectiveness of the developed approach.

Schottky contacts on ZnO thin film have been synthesized using noble metals like Pt, Pd and Au on n-Si substrate using radio frequency sputtering technique. Electrical characterizations of all the three Schottky diodes have been conducted using semiconductor parameter analyzer. Important empiric parameters of the fabricated Schottky diodes such as barrier height, saturation current, ideality factor and series resistance have evaluated at room temperature and compared. Cheung's method has been used along with thermionic emission model to calculate series resistance of the devices. The results have confirmed that the Schottky contacts formed on ZnO thin film are suitable for potential electronic device applications. TCAD simulation using SILVACO ATLAS package has also been done and the Schottky diode parameters are obtained.

Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer