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Introduction to the Dielectric Science and Technology Division

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Abstract

The front cover of Interface illustrates one of the greatest challenges and successes of dielectrics in microelectronics today, the growth of a layer of SiO2, 60 nanometers long and 1.2 nanometers thick, that is essentially defect free. This electronic gate, approximately 240 atoms long by 5 atoms thick, permits precise control of the flow of electrons across the channel of the transistor. The work shown here was done by Greg Timp and his colleagues at Bell Labs, Lucent Technologies. In this case, it is the insulator that ultimately controls the performance of the transistor. The work represented on the cover is just one example of how the interests of the Dielectric Science and Technology Division of ECS are having some of the greatest impact in the field of microelectronics.

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