MOSFET Scaling by CADDET

How economic inequality shapes social class stereotyping

This paper considers the layout design problem of a single block order-picking rack-based warehouse that employs turnover-based storage assignment in both vertical and horizontal dimensions. An analytical expression for vertical travel distance is derived which is incorporated in the pick distance model. The effect of inventory staggering on storage space requirement is considered in arriving at warehouse dimensions. A model that incorporates area cost along with handling cost in optimizing warehouse design is developed and a solution algorithm is presented. The analytical model for vertical travel and the optimization model are applied to data from a real life case. It was found that the model would offer considerable operational cost savings, especially when space costs are high. Computational experiments show that the effect of inventory staggering is quite significant in the estimated storage space. Experiments also demonstrated the importance of segregating products based on turnover in the vertical dimension.

The design of the development of learning methods involves the pattern of organizing elements or components in the curriculum. the development of learning materials listening to correlated core-based learning with the application of listening in action methods seen from two dimensions, namely horizontal and vertical dimensions. The horizontal dimension is related to the compilation of the scope of learning content. This spatial arrangement is often integrated with the learning and teaching process. The vertical dimension concerns the compilation of material sequences based on the order of difficulty. Arranged materials start from the easy ones, then go to the more difficult ones, or start with the basic ones followed by the continuation. This development describes in detail about the components that must be present in each listening learning material that can be used for the learning process. The design of the development of the listening learning material consists of several components, including the objectives of the curriculum, teaching materials or the material or content of the curriculum, teaching strategies or teaching methods, teaching media and teaching evaluation and improving teaching. These components are related to each other in the development of learning materials listening to correlated core-based learning by applying listening in action methods.

The vertical dimension is one of the important aspects that affect facial appearance, because it is related in facial height ratio. The vertical occlusal dimension is the height of the lower face measured from two points (infra-nasal and gnation points) when the maxillary and mandibular teeth were occlusion in the maximum intercuspal position. In complex cases, tooth wear can result in a decrease in facial height because the predominant wear on the anterior teeth encourages downward movement of the condyles when the intercuspal is maximum so that the vertical di-mension decreases. In addition, factors that cause a decrease in the vertical dimension are loss of posterior teeth accompanied by skeletal disharmony or accompanied by tooth abrasion and migration. The purpose of this paper is to explain how to restore the decreased occlusal vertical dimensions. Things that need to be considered are di-vided into two, extraorally and intraorally. Extraoral considerations are in the form of a large reduction in OVD, fa-cial esthetics and conditions of the temporomandibular joint. The parameters considered intraoral were the remain-ing tooth structure and occlusion. It was concluded that tooth wear due to functional and parafunctional activities can result in dimensional changes in facial morphology as well as a decrease in the occlusal vertical dimension. Correct OVD rehabilitation is an important factor in the success of rehabilitation treatment.

An experimental study to investigate thermal-induced damage to SSRL-designed beryllium foil windows was performed at LLNL's Laser Welding Research Facility. The primary goal of this study was to determine the threshold at which thermal-stress-induced damage occurs in these commonly used vacuum barriers. An Nd:Yag pulsed laser with cylindrical optics and a carefully designed test cell provided a test environment that closely resembles the actual beamline conditions at SSRL. Tests performed on two beryllium window geometries, with different vertical aperture dimensions but equal foil thicknesses of 0.254 mm, resulted in two focused total-power thresholds at which incipient damage was determined. For a beam spot size similar to that of the Beamline-X Wiggler Line, onset of surface damage for a 5-mm by 25-mm aperture window was observed at 170 W after 174,000 laser pulses (1.2-ms pulse at 100 pps). A second window with double the vertical aperture dimension (10 mm by 25 mm) was observed to have surface cracking after 180,000 laser pulses with 85 W impinging its front surface. It failed after approximately 1,000,000 pulses. Another window of the same type (10 mm by 25 mm) received 2,160,000 laser pulses at 74.4 W, and subsequent metallographic sectioning revealed no signs of through-thickness damage. Comparison of windows with equal foil thicknesses and aperture dimensions has effectively identified the heat flux limit for incipient failure. The data show that halving the aperture's vertical dimension allows doubling the total incident power for equivalent onsets of thermal-induced damage.

Introduction Experiments on humans and animals indicate that auditory localization develops through the association of sets of monaural and binaural cues and locations in space: this calibration process in guided by vision (Knudsen, 1989).The auditory system lacks a straightforward correspondence between external spatial locations and sensory receptive fields (Ahveninen et al ., 2014), so the development of auditory localization is more complex than visual localization. Aim The main aim is to assess if the development of audio spatial localization in sighted humans:Differs for horizontal and vertical dimensionsDepends on: a)Type of sound: static or motion b)Type of task: verbal or motor Results and DiscussionWe tested audio spatial localization for horizontal and vertical dimensions in sighted humans taking into consideration both the type of sound (static or motion) and the type of response requested by the task (verbal or motor). In audio spatial localization, sighted humans show enhanced sensitivity for the horizontal dimension, irrespective of the type of sound and the type of task. The static sound condition tend to be easier than the sound motion condition and motor responses more accurate than verbal responses. Developmental improvement between 10-15 years of age. Future direction: since vision has a predominant role in the maturation of space cognition in the brain, we aim to assess the development of audio spatial localization for horizontal and vertical dimensions in blind humans.

SUMMARY In this study, we developed a new method that can significantly accelerate the forward modelling of gravity fields generated by large-scale tesseroids while keeping the computational accuracy as high as possible. The cost of the high efficiency is that the method only works under the assumptions that (1) all tesseroids in the same latitude band have the same horizontal dimension, (2) the computation points are located at the same surface level and aligned with the horizontal centres of tesseroids and (3) each tesseroid has a constant or linearly varying density. The new method first integrates the kernel function of the Newton’s volume integral analytically in the radial direction to eliminate its dependence on the vertical dimension of the tesseroid, and then expands the integrated kernel function into a Taylor series up to a certain order. Because the Taylor series expansion term of the integrated kernel function is an odd or even function of the difference between the longitudes of the tesseroid and computation point, there exist shifting or swapping symmetry relations among the gravity field of tesseroids. Consequently, the shifting or swapping symmetry is extended to the tesseroids with unequal vertical dimensions. Numerical experiments using the spherical shell model are conducted to verify the effectiveness of the new method. The results show that the computational speed of the new method is about 30 times faster than that of the traditional method, which employs the Gauss–Legendre quadrature rule and a 2-D adaptive subdivision approach, while keeping almost the same computational accuracy. When applying the new method to an ice shell with unequal thicknesses, the results reveal that the relative errors of calculating V, Vz and Vzz are smaller than 10−8, 10−6 and 10−4, respectively if the Taylor series expansion is truncated at order 4, while the computational time consumed by the new method is about 7 times less than that of the traditional method. Finally, the influence of the truncation order on the computational accuracy and the strategies for dividing the latitude band into several parts to further improve the accuracy are discussed.

Analytic solutions for 2-D incompressible Stokes' flow with lateral variations in viscosity have been developed with a Green's function method and matrix propagator techniques. The analytic solutions are developed based on the observation that lateral variations in viscosity only result in mode coupling between viscosity and buoyancy in the horizontal dimension and not in the vertical dimension. The Green's function solution for flows with a viscosity that varies laterally with an exponential function indicates that, if the lateral variation in viscosity is within one order of magnitude, at very long wavelengths (for example degree 2) the mode coupling between viscosity and buoyancy does not greatly influence the geoid deduced from models ignoring the lateral variations in viscosity. The relatively short-wavelength geoid (degree 4 and higher modes), however, is seriously contaminated by mode coupling. The solutions for sharp lateral variations in viscosity calculated with propagator matrix techniques show that the topography varies rapidly across the viscosity boundaries.

Clinical accuracy and responsiveness of 3D software for measuring facial dimensions at altered vertical dimensions.

Many abstract bipolar concepts are usually represented by metaphors on vertical dimensions (e.g. positive-up, negative-down). However, several studies have found an asymmetry in the way in which individuals process bipolar dimensions, with +polarities being stronger than -polarities. The current research focused on moral metaphors on a vertical dimension (e.g. moral-up and immoral-down) and examined the asymmetric representation of moral and immoral concepts. The first experiment showed a distinct metaphorical association between morality and vertical space, consistent with earlier research. The second experiment showed that moral and immoral words are processed differently depending on whether they are used as metaphorically congruent or incongruent vertical cues. 'Moral-up' association modulated the amplitudes of the N1, P2, and late positive-going potential during the processing of moral words, whereas the 'immoral-down' association only modulated the amplitudes of the late positive-going potential induced during the processing of immoral words. These results suggest that asymmetry in the processing of vertically represented morality metaphors is reflected in the time course of the representation of these bipolar concepts, with the 'moral-up' association having an earlier effect than the 'immoral-down' association.

The relationship of vertical dimension to atypical swallowing with complete dentures

The development of silicon microcomponents and microsystems, being an outgrowth of the processing techniques commonly used for the fabrication of integrated circuits, was constrained to mostly planar dimensions. This was because optical lithography and most photoresists were developed for this specific purpose. In many applications, however, the components require that the vertical dimensions be larger than those obtained by traditional optical lithography methods. This led to the development of high aspect ratio processing in which the vertical dimension can be large compared to the lateral dimensions. While there is no apparent agreed-upon definition of high aspect ratio, the processes are generally characterized by x-ray lithography and/or micromechanical machining methods, with postprocessing and replication methods suitable for the dimensions involved. While there have been many accomplishments toward making these processes as economically viable as integrated circuit processes, much work remains to be done. The following sections describe the high aspect ratio processes and replication techniques. The work is a compilation of efforts worldwide and is meant to provide an overview of the processes and techniques.

An ultra-thin natural-source-based cellulose derivate is used in a bilayer gate dielectric for organic complementary inverters. Extraordinarily high small-signal gains up to 1600, a very sharp transition region (as low as 40 mV), a full rail-to-rail swing, a balanced noise margin of 92.5%, and “long-time” stability are shown, revealing that these inverters are highly suitable for complex circuit designs. For more than a decade now the research in organic electronics was driven by unique consumer markets demanding for electronic circuits on flexible substrates over large areas and ideally at low cost. Meanwhile, versatile macroelectronic applications with attractive form factors such as flexible displays,1-4 large-area sensor arrays,5-11 e-paper,12, 13 low-cost radio-frequency identification tags,14-18 and bendable microprocessors19 have been realized using organic thin-film transistors (OTFTs) as the essential element. In the majority of these applications OTFTs are integrated either in the form of arrays or as digital logic. The fundamental building block of digital logic is the inverter, a circuit that inverts an input signal. Much work has been devoted in the last five years to design unipolar inverters using p-type-only OTFTs.18-23 Unfortunately, unipolar logic based on single gate OTFTs always suffers from high power consumption and low noise margin coupled with high noise margin variability and therefore impedes the fabrication of complex circuits having hundreds or more logic gates.19, 22, 23 In this context, it stands beyond doubt that the integration of both n-type and p-type transistors in complementary organic-based circuits12 is very advantageous due to a lower power dissipation, higher noise margin, better operational stability, and easier design of the circuit.24-27 To date, several major obstacles complicated the development of organic complementary circuits, which are as follows: i) the lack of n-channel OTFTs with a performance comparable to the p-channel OTFTs, ii) the challenge of device stability (difficulty in fabricating OTFTs with hysteresis-free characteristics), and iii) the difficulty in fabricating sufficiently thin gate dielectrics allowing for low supply voltages. Although many recently reported complementary organic inverters are impressive with respect to their low operation voltages (≤5 V),27-36 high static gains (>100 V/V),25, 28, 30, 32 and large noise margins (>80%),25, 35, 37, 38 only few of those can combine low-voltage operation with high gain and sufficient immunity against electrical noise.39 Moreover, there have been few investigations of the influence of hysteresis and threshold voltage shifts on the inverter characteristics, which typically gives rise to electrical instabilities and performance limitations of those devices.32, 39 The inverter's noise margin is the most critical parameter, since it directly determines the maximum complexity of circuits.22 Particularly, interesting applications of organic electronic circuits are found in analog electronics that allow for the read-out and processing of signals from printed large-area sensors and form an interface to silicon electronics. Examples are analog-to-digital (A/D) converters, operational amplifiers, and comparators, all including several tens of transistors, thus requiring both high gain and a large noise margin to be functional as well as sufficient processability. It is interesting to note that the majority of organic complementary inverters already mentioned24-34, 36-40 relied on pentacene as the p-type semiconductor (14 incidences), fluorinated copper phthalocyanine (6 incidences), or N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (5 incidences) as the n-type material. On the contrary, the variation in gate dielectric materials that are used is much higher with an emphasis on hybrid dielectric systems. Hybrid systems allow accounting for both a high dielectric breakdown voltage and an engineered interface to the semiconductor. Moreover, the implementation of biodegradable and biocompatible materials represents a new niche in the organic electronics research, aimed to address the issues of cost and toxicity to humans and environment posed by nowadays electronics, a topic that was recently reviewed elsewhere.41-43 Accordingly, we have demonstrated the usage of a novel hybrid and biodegradable high-k gate dielectric material system based on a cellulose derivative for low-voltage complementary organic circuits with exceptional high noise margins.35 Previous work done in our laboratories demonstrated the fabrication feasibility of complex circuits, where the electrode patterning was performed by a self-aligned photolithography technique.44, 45 This process can easily be transferred to an anodized aluminum (Al2O3) + trimethylsilyl cellulose (TMSC) based bilayer system; the respective results will be published soon. To follow on this preliminary work we have developed an extraordinarily well-performing complementary inverter technology based on a hybrid dielectric composed of a bilayer of alumina (Al2O3) and trimethylsilyl cellulose (TMSC) and pentacene or C60 for the p-channel and the n-channel organic semiconductor, respectively. It outperforms any inverter reported so far with respect to the combination of excellent key parameters, such as record DC gain of above 500 V/V, low operation voltage of only 4 V, and large noise margin up to 92.5%. In order to clarify the origin for this high performance, special attention is given to the investigation of the semiconductor–dielectric interface, the semiconductor morphology, the nature of traps, the influence of mobility levels on the inverter performance and its long-term stability. This article is not meant to report new materials and systems, but rather find explanations and present a thorough analysis of the extraordinary performance of the cellulose derivative (TMSC) dielectric and the TMSC to semiconductor interface in organic field-effect transistors and simple inverter circuits. All OTFTs presented in this work have a bottom gate, top contact device architecture, as illustrated in Figure 1a. The transistor fabrication process is described in detail in the Experimental Section. The semiconducting layer is pentacene for p-type and C60 (fullerene) for n-type conduction. For the gate dielectric, an inorganic (Al2O3)–organic (TMSC) bilayer is chosen with 28 and 30 nm layer thickness, respectively. The dielectric properties of both single-layer TMSC films and bilayer Al2O3 + TMSC films, were investigated by current–voltage (I(V)), capacitance–frequency (C(f)), and capacitance–voltage (C(V)) measurements in appropriate capacitor structures with 72 nm insulator layer thickness of pure TMSC and 28 + 30 nm of bilayer film of Al2O3 + TMSC, respectively. In Figure 1b, the I(V) curves of a representative capacitor formed by a single layer cellulose dielectric is shown, whereas in Figure S1a (in the Supporting Information) the curve with bilayer dielectric is displayed. A comparison of I(V) curves of a single layer and bilayer dielectric is displayed in Figure 1c. At an electric field of 3.0 MV cm−1 (equivalent to ≈22 V) a current density on the order of 10−6 A cm−2 is observed for the single-layer TMSC. A breakdown field of 4.5 ± 0.3 MV cm−1 is extracted from eight appropriate capacitor structures. One representative C(V) measurement is displayed in Figure 1d. Its capacitance of about 29 nF cm−2 corresponds to a dielectric constant of εR = 2.4 ± 0.2 at 1 kHz with an excellent stability at frequencies down to 0.5 mHz (virtually flat dielectric constant and low dielectric losses which are indicative of a high purity and negligible amount of mobile ionic species) as illustrated in Figure 1e.46 In comparison, capacitors based on the bilayer dielectric have three orders of magnitude lower leakage currents (≈10−9 A cm−2) at an electric field of 3.0 MV cm−1 corresponding to ≈17.5 V and an effective capacitance of 53 nF cm−2 at 1 kHz (see Figure S1a,b, Supporting Information). As can be derived from Figure S1c (in the Supporting Information) the permittivity of the bilayer dielectric also shows excellent stability over the tested frequency range (1 mHz to 10 kHz). The measured capacitance value of the dielectric is in good agreement with calculations by assuming a permittivity of 9 and a thickness of 28 nm for the Al2O3 layer as well as a measured permittivity of 2.4 ± 0.2 (Figure 1e) and 30 nm thickness for the TMSC layer (see the Experimental Section). In any OTFT with bottom gate architecture the surface properties of the gate dielectric (surface energy, surface roughness) decisively affect the arrangement and growth of small molecule semiconductors. The surface energy of spin-coated TMSC thin films was determined by contact angle measurements. With a water contact angle of 98.5°, TMSC can be regarded as a hydrophobic, low energy surface material with a total surface energy of γ = 24.2 ± 0.6 mN m−1, separable in a small polar component γP = 1.8 ± 0.5 mN m−1 and a dispersive component γD = 22.4 ± 0.1 mN m−1. The average surface roughness, indicated by the root mean square (rms)–roughness values, was found to be only 0.77 ± 0.1 nm by atomic force microscopy (AFM) measurements. On this smooth and low energy TMSC surface, a small-grain growth mode with average grain sizes between 150 and 300 nm for pentacene (shown in Figure 1a) and 50 nm for C60 was observed by AFM measurements. In Figure 2, typical electrical characteristics of OTFTs with either C60 or pentacene as the semiconducting layer are plotted. Both p- and n-type transistors are based on the inorganic–organic bilayer gate dielectric composed of Al2O3 and TMSC. The output characteristics ID(VDS) are displayed in Figure 2a,b, whereas the transfer characteristics ID(VGS) are shown in Figure 2c,d. Both transistor types display very small hysteresis between forward and reverse voltage sweeps. The output characteristics show clear saturation, but for the pentacene-based OTFT a non-linear behavior of the drain current at very low drain voltages is observable (Figure 2b). Such an S-shape of the output curve has been already observed and reported for many different device configurations and has sometimes been attributed to a lateral field dependent contact resistance.47-55 In Table 1, the critical device parameters Von (onset voltage), Vthr (threshold voltage), S (subthreshold swing), μlin (charge carrier mobility in the linear regime), and μsat (charge carrier mobility in the saturation regime) are compiled and averaged over eight devices for each transistor type. On average, C60-based OTFTs show a charge carrier mobility of 0.7 cm2 V−1 s−1 in the saturation regime, a threshold voltage of 1.3 V, and a small subthreshold swing of 305 mV dec−1. Pentacene-based OTFTs have on average a mean threshold voltage of −4.7 V, a very small subthreshold swing of 225 mV dec−1, and a field-effect mobility of 0.22 cm2 V−1 s−1 in the saturation regime. The gate leakage currents are very low and in the range of 10−10 A. The balanced performance of our p- and n-type OTFTs, as well as the fact that both transistor types strictly behave as normally off transistors at zero applied gate voltage is a good base for integrating them in complementary organic inverters. A schematic image of such a complementary inverter circuit is displayed in Figure 3a together with the voltage transfer characteristics (VTCs) of a typical device and the static gain measured for operation voltages of VDD = 4, 5, 6, and 7 V. The inverter exhibits extraordinarily high small-signal gains; for all operation voltages, gains above 500 V/V are measured with a maximum value of about 1000 V/V for VDD = 7 V. The best performing device even has a maximum gain value of 1600 V/V. Moreover, a very sharp transition regime (ΔVin ≤ 40 mV) and a full rail-to-rail swing are observed. The extracted inverter parameters are compiled in Table 2. The switching threshold voltages VM are found to be very close to the ideal value of VDD/2 at all operation voltages with a nearly perfect fit (e.g., VM = 2.04 V at VDD = 4 V). In Figure 3b, the mismatches of the threshold voltages to the ideal values (ΔVM) are plotted as a function of VDD revealing a linear increase of ΔVM with the supply voltage. This means that the asymmetry of the VTCs increase with increasing the operation voltages. Additionally, the noise margins (NM) are plotted in Figure 3b as a function of VDD, illustrating the linear decrease of the NM with increasing operation voltage. Such a behavior reveals the direct correlation between ΔVM and NM and is an indication of the deviation of the VTCs from perfect symmetry. The noise margin is an important figure of merit of an inverter stage and measures the immunity against inevitable transistor parameter variations and electrical noise.56 There are several ways to determine the noise margin of an inverter. One convenient way is called the “maximum equal criterion” (MEC), where the NM is found by the maximum square that fits between inverter transition curve and the mirrored inverter curve as shown in Figure 3c.22, 35 The NM values for all the supplied voltages are listed in Table 2. The noise margin is mainly limited by the steepness of the transition ΔVin and the position of the switching threshold voltage VM (VM = Vin = Vout) as shown in Figure 3c. High and balanced noise margins are found when the ideal condition VM = VDD/2 is met, thus when VM = Vin =VDD/2 = Vout. The inverter in Figure 3c has a NM of 1.79, which is 90% of the maximum theoretical value for a supply voltage of 4 V, determined by the “maximum equal criterion.” Additionally, the “negative slope criteria” reveals a balanced NM of 1.85 V (92.5%) for a supply voltage of 4 V. The OTFTs with pentacene and C60 semiconductor layers (as used in the complementary inverters) were also analyzed with regard to their long-term stability. The dependence of their onset voltage and charge carrier mobility on the time period after preparation is plotted in Figure 4 based on measurements of at least five devices for each transistor type. The error bars display the standard deviations. p- and n-type devices exhibit an onset voltage shift of +1.3 and +0.95 V, respectively, over a period of 45 days. The main part of the shift occurred either after the first or after the second measurement and then the onset voltage shift tended to saturate. It seems that both pentacene- and fullerene-based devices stabilized their electrical properties after few days. Between day 8 and day 45 no significant change in the transfer characteristics was observed. Concerning the subthreshold swing, no significant change was observed over 45 days (S = 215 mV dec−1 (0 days), 210 mV dec−1 (8 days), and 225 mV dec−1 (45 days)) in the pentacene OTFTs, indicating that the interface trap density is stable. On the contrary, after 8 days an increase of the swing was observed for the C60 devices from 305 mV dec−1 (0 days), to 410 mV dec−1 (8 days), to 430 mV dec−1 (45 days). The mean value of the charge carrier mobility of the pentacene OTFTs showed no significant variation over 45 days: 0.22 cm2 V−1 s−1(fresh sample), 0.19 cm2 V−1 s−1 (after 8 days), 0.21 cm2 V−1 s−1 (after 45 days). In contrast, a strong reduction of about one order of magnitude (from 0.7 to 0.06 cm2 V−1 s−1 within the first 8 days and to 0.05 cm2 V−1 s−1 after 45 days) was observed for the fullerene transistors. In order to test the reliability of our OTFT devices we have also performed negative and positive bias stress tests. The bias stress was done 1 day after fabrication, on devices which had been previously measured only once. A reversible negative onset voltage shift of about 400 mV was observed under negative bias of −7.5 V over 21 hours stress (see Figure 5a,b) The main part of the negative voltage shift occurred during the first 2 hours (300 mV) whereas shift saturation was reached after 6 hours. The positive bias stress resulted in a significantly smaller positive onset voltage shift (ca. +100 mV over 4 hours stressing the device). Devices that were stored for seven months in the glovebox showed no bias stress effect at all (i.e., shift of the onset voltage) when their transistor characteristics were measured at regular intervals during the storage period. In order to investigate the “long-time” behavior of complementary inverters, electrical measurements were done after 1, 4, 8, and 45 days of the respective device preparation. Inverters were measured 1 day after device stabilization (see Figure 4a,b). The “long-time” behavior of complementary inverters is shown in Figure 4c,d where the VTC and gain curves are plotted as a function of time. For the lowest VDD of only 4 V, a small shift of the switching threshold voltage was measured: starting from 2.04 V after 1 day to an identical value of 2.17 V after 8 and 45 days, respectively, with a related exceptional high noise margin of 1.79 V (90% of the theoretical maximum) after 1 day and 1.74 V (87%) after 8 and 45 days. It is interesting to note that, after 8 days of storage time, the hysteresis in inverter characteristics was virtually negligible (<100 mV, see Figure 4d) and moreover, repeated measurements did not change the inverter transition, although the gain was somewhat reduced (from 503 (0 days) to 320 (8 days) and 195 (45 days)). The operational stability of the VTC was shown over a period of at least 45 days (Figure 4c for VDD = 4 V). Furthermore, the remarkable long-term stability of these TMSC-based complementary inverters was demonstrated by 16 consecutively recorded inverter curves that are virtually superimposed over one another (Figure 5c). The current–voltage characteristics show that the Al2O3 + TMSC bilayer capacitors have substantially lower leakage currents than the single TMSC layer devices. Due to the roughness of the aluminum bottom electrode with spikes up to 10 nm, the anodization process is a convenient method to reduce the leakage currents for at least three orders of magnitude at an electric field of 3 MV cm−1 as displayed in Figure 1d and make the dielectric layer more robust.57 Another advantage of the anodization step is the substitution of the hydroxide of the native oxide layer. Finally, the subsequent short oxygen plasma treatment (see the Experimental Section) is sufficiently removing all residuals left after the anodization process. This procedure allows for the generation of a pure and trap-reduced dielectric interface to the organic semiconductors, by measurements at low revealing a virtually flat permittivity in the mHz to kHz frequency range and low dielectric losses which both are indicative of a high purity and negligible amount of mobile ionic The generation of this excellent interface is in virtually hysteresis-free characteristics of all the One important that the performance of OTFTs, and in the charge carrier is the of the As shown by several the of the surface energy of the to that of the is one important the growth For a low surface energy material with a smooth surface TMSC, a growth mode is and with a rather high density and small grain sizes are formed (see Figure The high density of grain a significant decrease of the charge carrier since grain as charge On the a better between pentacene on low surface energy materials TMSC with and better reduce the of trap thus the mobility of charge in the In there is an between grain related and interface with regard to their influence on charge carrier The low subthreshold swing observed in all our pentacene-based OTFTs is indicative of a low interface trap density which the influence of the large grain trap density on the charge carrier Accordingly, a mobility 0.2 cm2 V−1 s−1 is observed in the p-type devices. In C60 films, the influence of on the charge carrier mobility is by far not as significant as in pentacene films, which is attributed to the of the fullerene In the pentacene OTFTs (see Figure a non-linear current increase in the linear regime of the ID(VDS) output characteristics is at higher gate have been in to such a which can be observed in bottom gate The explanations i) the of the charge carrier mobility for semiconductor ii) currents that the of the mobile by an effective under the drain and iii) large at the electrode from an energy between the work of contact material and semiconductor films, a gate or large contact are found in our of these it has been shown that a mobility in combination with a small contact in a non-linear drain voltage dependence of the current due to The from a of from trap and a dependence of on the drain A respective of the pentacene output curve in Figure the dependence in the regime 2 V, thus indicating that a mobility has to be The of any hysteresis in the I(V) curves and the low and value of the subthreshold swing a low density of interface in the pentacene are not for the observed and the of the as by the of the pentacene layer gives rise to which to a field dependence of the charge carrier This is all the more given that the pentacene grain sizes are 300 nm at a large density of grain As by Figure 4 the characteristics of both pentacene- and C60-based OTFTs show a positive onset voltage shifts storage which after a of measurements. The virtually subthreshold swing in pentacene as well as the negligible hysteresis as the origin of the On the contrary, it seems that trap are for the positive onset voltage shift in are either over time or during the first measurements by the applied positive gate be easily by the gate bias and therefore are not to the swing, but the small onset voltage in pentacene-based It has been reported by many that the of the of trap in pentacene trap also be due to such as at the a at the or a at the fabrication and transfer from the to the measurement stage the semiconductor layer and rise to such For oxygen can even the devices are to but transferred directly and measured in a glovebox with reduced oxygen and water have also observed that the of oxygen with pentacene is in the that these are under device operation with the of oxygen in the grain observed that the storage of devices in and their subsequent measurement in did not a change in their I(V) also observed that the storage time to the first measurement has influence on the device (i.e., on the onset voltage in this of and the first measurement the of to the of oxygen or with the which in a second are by Moreover, also are are not as in the as the (see and This an for the positive shift of the onset voltage between first and second measurement (Figure and also for the saturation of the onset voltage shift in In order to clarify which of are present in our we performed measurements on pentacene films (in and after storage in for (see Figure Supporting Information). storage under a small increase of the at energy is observed that can be attributed to the to and The analysis reveals an increase of the from 0.2 to At the position no change is that trap in our devices for bias stress and the positive onset voltage can mainly be attributed to It be that the of any mobility in pentacene OTFTs against an of pentacene both are to oxygen For the C60 transistors, one a strong decrease of the charge carrier mobility during 8 days of storage which is by all over the device grain This is a effect of The decrease in charge carrier mobility and the at the interface that the subthreshold swing is in a positive onset voltage shift of the C60 transistors. With respect to the complementary inverters, noise margin values beyond from the maximum theoretical value for all supply voltages are and the high operational of the OTFT devices. At a very low supply voltage of 4 V, our bilayer organic complementary inverters have a static gain of more than 500 V/V with a noise margin of 92.5%, which is already reported devices with architecture (see the of inverter performance given in 38 and also gain values above 1000 V/V values up to 1600 were measured for our devices. This is all the most as the charge carrier mobility values of the transistors are not thus the that the of the mobility values between p- and n-channel with the virtually hysteresis are the factors for high gain and high noise margin Accordingly, a mobility 1 be the the is not high ≤ it can be by and p-channel transistors with different In our the mobility is The static of a complementary inverter is determined by technology parameters, the parameters of p- and n-type transistors. A good of these parameters a good saturation of both output can to a significant increase of the gain A is shown in the Supporting Furthermore, high gain values are also determined by the interface An insulator with an low trap density (as this is the for is in having I(V) curves with virtually zero Accordingly, it is to measurements with a very high voltage small voltage thus one to the high gain value of the complementary inverter it by hysteresis The noise margin with increasing VDD due to their strong this is also for the of the VTCs by see Figure A for this behavior can be found in the bias stress that was observed for both types of transistors. The negative shift of Von under negative gate and the positive

This qualitative research aims to describe the philosophical values of the Principle of Belief in the One, Supreme God as the spirit of encounter and brotherhood in the context of religious plurality in Indonesia. The philosophical values in the first Principle, in addition to having a vertical dimension, also have a horizontal dimension. The vertical dimension is related to the human tendency to seek wholeness in God, while the horizontal dimension is related to the implications of faith in the practice of life, namely noble and commendable behavior towards fellow human beings. The findings of this study indicate that the philosophical values of the Principle of Belief in the One, Supreme God do not provide room for religious egoism in various forms of expression. The conclusion is that the principle of Belief in One, Supreme God strengthens encounter and brotherhood in the context of religious plurality in Indonesia. Relevant attitudes of faith to the Principle, horizontally, are being humble, open to plurality, respecting other religions, recognizing equal rights to religious freedom, and rejecting all forms of radical-extreme actions in the form of destructive actions in the name of God and religion. Discriminatory, intolerant, and exclusive attitudes in the practice of religious life in Indonesia are contrary to the principle of Belief in the One, Supreme God.AbstrakPenelitian dengan metode kualitatif ini bertujuan untuk mendeskripsikan nilai-nilai filosofis Sila Ketuhanan Yang Maha Esa sebagai spirit perjumpaan dan persaudaraan dalam konteks pluralitas agama di Indonesia. Nilai-nilai filosofis dalam Sila pertama tersebut selain berdimensi vertikal, juga berdimensi horizontal. Dimensi vertikal berkaitan dengan kecenderungan manusia untuk mencari keutuhan diri kepada Tuhan, sedangkan dimensi horizontal berkaitan dengan implikasi iman dalam praksis kehidupan, yakni perilaku mulia dan terpuji kepada sesama manusia. Temuan penelitian ini menunjukkan bahwa nilai-nilai filosofis Sila Ketuhanan Yang Maha Esa tidak memberi ruang bagi egoisme agama dalam berbagai bentuk pengungkapannya. Kesimpulan penelitian ini adalah bahwa Sila ”Ketuhanan yang Maha Esa” memperkuat perjumpaan dan persaudaraan dalam konteks pluralitas agama di Indonesia. Sikap iman yang relevan dengan Sila tersebut, secara horizontal, adalah rendah hati, terbuka pada pluralitas, menghormati agama lain, mengakui kesetaraan hak atas kebebasan beragama, dan menolak segala bentuk tindakan radikal-ekstrem berupa aksi-aksi destruktif atas nama Tuhan dan agama. Sikap diskriminatif, intoleran, dan eksklusif dalam praksis kehidupan beragama di Indonesia bertentangan dengan Sila Ketuhanan Yang Maha Esa.

Accurately locating the foraging areas of diving marine predators is central to understanding their ecology and implementing conservation and management regulations. This study compares horizontal and vertical approaches of identifying seal foraging areas. We analysed GPS locations and dive data obtained from GPS/GSM tags fitted on eight grey seals (Halichoerus grypus) and nine harbour seals (Phoca vitulina). In the horizontal dimension, we used the First Passage Time to identify Area-Restricted Search (ARS) behaviour. In the vertical dimension, we used two dive criteria indicating benthic foraging behaviour: dive shape and vertical descent speed. The two approaches were spatially compared using the Index of Differences in Spatial Pattern. We found that the two approaches highlight similar hotspots when pooling all individuals of the same species. However, the degree of overlap varied considerably at the individual level. Some individuals performed most of their likely foraging dives (vertical dimension) in areas where they also displayed ARS behaviour (horizontal dimension), while others performed these dives both in and outside ARS zones. We suggest that comparing foraging areas detected from horizontal and vertical approaches (1) can strengthen the confidence in the efficiency of approaches to accurately spatialize the actual foraging effort of a diving predator at the scale of a colony (sampled with several individuals); and (2) provides more comprehensive insights into potential interindividual differences in foraging strategies as some divergent individual strategies may not be detected using only horizontal movements.