Wen-Sheng Zhao from Hangzhou University, China, talks to Electronics Letters about the paper ‘Novel electromagnetic bandgap structure for wideband suppression of simultaneous switching noise’, page 1243 Wen-Sheng Zhao My research fields include interconnect modelling, multiphysics simulations and microwave sensor design. My major research topic is signal and power analysis of silicon via (TSV)-based 3D integrated systems. In recent years, the fourth industry revolution has shown an urgent need to develop next generation memory modules. As a key technology of industry 4.0, TSV-based high-bandwidth memory (HBM) has attracted a lot of interest from both the research and industrial worlds. To guarantee the system performance, it is necessary to perform signal/power/thermal integrity analysis for an HBM module. We are currently working on the issues related to the physical design of HBM modules (such as TSV modeling, equaliser design, and power noise suppression). Modern circuits are developing towards miniaturisation, high frequency and low power consumption, which puts strict constraints on the signal and power integrity design. For example, the operating voltages are continuously lowered, thereby limiting noise margin in power distribution network (PDN). Under such circumstances, power/ground noise is becoming a serious problem. To resolve this issue, various techniques including decoupling capacitor and electromagnetic bandgap (EBG) have been proposed and are under study. In comparison with decoupling capacitor, EBG structure can provide wideband noise suppression, and has been widely explored in the chip, package, and board. To improve the system performance, it is always desirable to increase the stopband bandwidth and rejection level of EBG structure. In this Letter, a power plane with coplanar EBG etched in the S-bridge EBG was proposed. With the proposed EBG structure, an ultrawide bandgap from 0.28 to 25 GHz with a high suppression level of -45 dB was achieved. Moreover, the signal integrity performance of the proposed EBG power plane was examined. The signal integrity can be ensured by utilising differential traces as the transmission structure. The proposed design can be used to reduce power/ground noise efficiently for mixed signal systems. We expect the proposed design to provide performance improvements in various mixed-signal systems in the immediate future. Currently, we are also working on developing EBG structures for silicon interposer and on-chip PDN. In the longer term, we expect that the EBG structures can be further explored and used in the physical design optimisation of HBM systems. As the clock frequency of the circuit system is continuously increased, the frequency of the simultaneous switching noise (SSN) also increases. However, the low-frequency components of the noise are not reduced accordingly. Therefore, the major issue we faced was developing a wide stopband EBG structure with a low cutoff frequency. Moreover, as grooves etched on the power/ground plane have an adverse impact on the signal transmission, we had to pay special attention to ensure signal integrity in the EBG design procedure. When we began studying TSV technologies, there was very little real-world deployment. Although several semiconductor giants such as Samsung presented some TSV based memory modules, these systems remained in the laboratory stage. Nowadays, TSV technology has matured, and the TSV-based HBM modules have been used in many graphics processing units since 2015. We are currently working on the physical design and optimisation (including signal and power integrity analysis) for TSV-based integrated systems. We have seen the introduction of many kinds of techniques (e.g., EBG, equaliser, differential signaling, and active decoupling) which will be helpful for future designs. There is no doubt that further improvements are always desirable to promote wide applications of TSV based integrated systems.
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