Novel half mode substrate integrated waveguide power amplifier

Objectives: In this study, two new power splitters integrated with a novel half mode substrate integrated waveguide (HMSIW) and composite right/left-handed transmission lines (CRLH-TL) cells are presented, realized and compared to a conventional Substrate Integrated Waveguide (SIW) one. Methods: The SIW technology is characterized by a high Q factor and a low return loss, but it suffers from the massive size particularly in low frequencies bands, so to achieve practically 50% miniaturization in size with keeping the high performances of the SIW technique, HMSIW origins from SIW has been utilized. otherwise, so as to reduce the HMSIW device, size, Composite Right/Left-Handed Transmission Lines (CRLH-TL) cells are applied. The designs are printed on a Roger RT/duroid 6010 and performed within an HFSS environment based on the finite element method (FEM). Simulations and measurements of the three power dividers are presented over a frequency band from 2.2 GHz to 2.6 GHz. Findings: The novel proposed component achieves about 70% and 90% of size reduction compared to, respectively, the HMSIW and SIW power splitters. The simulated and measured results are in close agreement. Application: Compared to the SIW power divider and the HMSIW one the novel proposed device is characterized by a compact size and an easy fabrication process. So that it will enable a convenient reduction of size, loss and cost in millimeter-wave and microwave systems.Keywords: Power Divider, HMSIW, SIW, CRLH-TL Cells, Tapered Transition

This paper presents a compact wideband power amplifier (PA) which can be reconfigured in two different wide bands for 5G applications. To achieve the reconfiguration of operation frequencies and reduce the circuit volume, a simple switching T-shaped impedance matching network is adopted, including only one PIN diode, to realize the input matching network (IMN) and output matching network (OMN). The second harmonic control technology is adopted to improve the performance. To demonstrate the reconfigurability of two wide bands, a PA was designed and fabricated to operate at 3.2-3.6 GHz and 4.6-5.0 GHz based on GaN HEMT die device. The size of PA is 43x45 mm. Measured results show that the designed PA achieves 40.5-41.7 dBm output power and 53%-71% drain efficiency in the first band, while 39-40.4 dBm output power and 48%-56% drain efficiency in the second band.

A filtering power divider/power combiner based on half mode substrate integrated waveguide technology for high power applications is proposed. This design includes one half mode substrate integrated waveguide cavity, one matched load, and four sections of quarter-wavelength transmission lines. The high isolation between output ports is obtained by combining the half mode substrate integrated waveguide cavity and microstrip network (one matched load and four sections of quarter-wavelength transmission lines). This structure utilizes for high power applications because of the matched load is connected to ground. The design is fabricated and tested by network analyzer. A good agreement between the simulated and measured results is observed. The measured results show that for a return loss of 15 dB, the bandwidth is from 5.15 to 5.35 GHz (IEEE 802.11a wireless local area network (WLAN) standard) and over this whole bandwidth, the output return loss and isolation between output ports are better than 14.5 dB and 17.5 dB, respectively. Also, the measured insertion loss is

This paper presents a novel method by using resonators in both input and output matching networks to design a tri-band GaN HEMT power amplifier. Two parallel resonators in series as one frequency selection element are used for each operation frequency. By applying this frequency selection element in both input and output matching networks constructed with microstrip line, tri-band matching network is realized. With our proposed frequency selection element, we can use the conventional L-type structure to design matching network for three frequencies so that the design analysis procedure is easier. We also propose a new simplified output matching network by using bias line to match the output impedance to reduce the number of resonators. To demonstrate our method, we fabricate a tri-band power amplifier that can work at 1 GHz, 1.5 GHz, and 2.5 GHz concurrently. Experimental results show that the output power is 39.8 dBm, 40.8 dBm, and 39.2 dBm with 56.4%, 58.3%, and 43.4% power added efficiency (PAE) at 1 GHz, 1.5 GHz and 2.5 GHz, respectively.

A low profile cavity-backed dual-band antenna based on half mode substrate integrated waveguide (HMSIW) technology is designed. HMSIW technology is used to make semicircular resonant cavity. An additional resonance can be generated by loading a U-shaped strip outside the radiation aperture of HMSIW cavity, thus realizing the dual-band performance. The reflection characteristics of single-band and dual-band HMSIW cavity-backed antennas are studied. The simulated results show that the resonant frequencies can be controlled easily by changing the antenna parameters. The proposed antenna has the characteristics of low profile, high gain and low cross polarization.

This paper proposed a novel compact bandpass filter with folded half mode substrate integrated waveguide (FHMSIW) cavities using two-layer printed circuit board(PCB) process. The area of the FHMSIW filter is reduced by nearly 50 % and 75 % compared with half mode substrate integrated waveguide(HMSIW) filter and substrate integrated waveguide(SIW) filter, respectively. A four-pole Chebyshev FHMSIW bandpass filter at C-band has been designed, simulated and fabricated. Measured results are presented and found to agree with the full-wave simulated results by using Ansoft HFSS. The filter shows good performance and compact size.

A planar half mode substrate integrated waveguide (HMSIW) broadband bandpass filter is proposed. It is realized by cascading a lowpass filter and a highpass filter. A transmission line with half mode substrate integrated waveguide (HMSIW) on the circuit board has the characteristic of highpass, while a periodic uniform photo band structure (PBG) array has the characteristic of bandstop. Combining these two structures, a novel compact broadband bandpass filter (BPF) is fabricated and measured. Measured results show that the proposed BPF has wide bandwidth from 11.8 GHz to 23.8 GHz, all the measured insert loss are less than 3.6 dB, return loss are less than 9 dB in the passband. The BPF achieves a wide stopband with 34 dB attenuation low to 5 GHz and 27 dB attenuation up to 35 GHz.

This paper presents a design for a highly-linear power amplifier — based on GaN HEMT- with an output power of more than 10W, and an ultra-broadband bandwidth extending from 0.8 to 4.2 GHz (136%). Different design techniques are adopted to achieve a flat power gain of 10 ± 1.5 dB over the entire operating bandwidth. Eighth order low pass filter matching circuits are designed for input and output matching networks, providing optimal fundamental and harmonic impedances within more than 2 octaves of operation. The designed power amplifier exhibits a small signal gain more than 10dB, an input/output return loss better than 10 dB within the operation bandwidth. Second and third-harmonic intermodulation distortion are far below −36dBc and −45dBc, respectively, at an input power of 30dBm over the entire frequency band, while achieving a power added efficiency (PAE) better than 25%. Using a two-tone testbench with a frequency spacing of 8 MHz, a maximum value of the output OIP2 and OIP3 are found to be greater than 50 dBm, and 60 dBm, respectively.

In this paper, we employ a novel method by using resonators with microstrip lines to design a dual-band GaN HEMT power amplifier. At both input and output matching networks, we add parallel resonators between series microstrip lines and open-circuited stubs to realize the dual-band operation. With our proposed structure, we can use the conventional L-type structure to design matching network for each operation frequency so that the design is easier. By using just one transistor without any tunable electronic element or switch, a novel dual-band class AB power amplifier working at 1.5 GHz and 2.4 GHz is designed and fabricated to demonstrate our proposed simple method. With dual-band matching networks using resonators, the experimental results show the output power 40.3 dBm and 39.05 dBm with power added efficiency (PAE) 55.63% and 40.25% at 1.5 GHz and 2.4 GHz, respectively.

In this letter, a wideband compact 3-dB coupler is designed based on the multilayer half mode substrate integrated waveguide (HMSIW) theory and Bethe hole coupling theory. The design utilizes higher band of quasi-TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5,0</sub> mode in HMSIW and dual-layer structure to reduce the size of component. This letter also theoretically proposes a relationship between SIW and HMSIW broad wall coupler with the same coupling section, which can obviously simplify the design procedure and maintain stable coupling differences. Meanwhile, this coupler shows a 3-dB coupling over a wide bandwidth with a single row of only five small apertures, which needs more in SIW and waveguide circuits. In long term, the method of cutting SIW components along magnetic wall to get HMSIW components can also play an important role in the future design, especially in size reduction and performance improvement of the circuits. Simulation results are in agreement with the measured data.

In this paper, a novel design of half-mode substrate integrated waveguide (HMSIW) cavity based antenna is presented for dual-frequency application in Ka band (26-40 GHz). Two HMSIW cavities are placed side by side and are excited through the help of inductive coupling window followed by a section of HMSIW line. As a result, the cavities are excited at TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">110</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">HM</sup> mode and the open end dielectric aperture of the HMSIW cavity starts radiating into free space. The two HMSIW line are connected to the input SIW feeding line with the help of a SIW to HMSIW power divider. The proposed antenna resonates at 26 GHz and 29 GHz while maintaining a compact design configuration which makes it suitable for application in LMDS frequency band.

In this paper, novel evanescent mode substrate integrated waveguide (SIW) and half-mode substrate integrated waveguide (HMSIW) filters are proposed, and their applications to mechanical and electrical reconfigurable bandpass filters (BPFs) are studied. SIW and HMSIW loaded with coupled complementary split-ring resonators achieve forward electromagnetic wave transmission below the waveguide cutoff frequency due to evanescent wave amplification. The half-mode configuration of the proposed SIW BPF is an opening structure, and the proposed HMSIW BPF is suitable to load with control elements. The electric/magnetic coupling effects and frequency responses reconfigurable mechanics of the proposed HMSIW structure are studied based on lumped equivalent circuit model. By using floating capacitors with mechanical switches and PIN diodes loaded on the HMSIW resonators, two one-bit HMSIW 500 MHz mechanical and 300 MHz electrical reconfigurable BPFs are demonstrated.

A compact bandpass filter exhibiting an ultra-wide out-of-band rejection is studied and developed. A combination of electromagnetic bandgap (EBG)-loaded half-mode substrate integrated waveguide (HMSIW) and composite right/left-handed (CRLH) HMSIW is used in this development. The proposed filter operates below the characteristic cutoff frequency of HMSIW. The CRLH HMSIW loaded with EBG structures is investigated first. The filter with a miniaturized size is then implemented with two slots etched on HMSIW to reduce coupling effects between EBG structures and interdigital capacitors. Defected microstrip structure (DMS) as feed lines are used to obtain an ultra-wide out-of-band rejection. Measured results show that this effective stopband can cover up to 10.3 times the design center frequency for a rejection level of 20 dB. The filter exhibits high selectivity, good stopband performance, and compact size.

This paper presents a new method that improves the stability of the C-band GaN power amplifier (PA) while maintaining high PA gain. It is well known that the electromagnetic (EM) coupling between the PA input and output matching network (MN) can degrade the PA stability. In this paper, an iteration method is used to monitor the design of the input MN to compensate the EM coupling and stabilize the whole PA, while the output MN is designed to improve the PA efficiency by carefully controlling the drain impedances at multiple harmonic frequencies. By using the proposed method, a 5.8GHz class-F power amplifier is designed, fabricated and measured. Experimental results reveals that the proposed PA archives a saturation output power of 38.2dBm, drain efficiency of 70.7% and gain of 13.5dB while maintaining a high stability factor over the entire frequency band.

Nowadays, the RF system requires a small size for compact package passive and active devices, include antenna devices. This paper proposes the half mode substrate integrated waveguide (HMSIW) structure combined with the antenna slot known as HMSIW cavity backed slot antenna (CBSA). It is achieved by bisecting the conventional SIW along the fictitious magnetic wall. By using parametric studies for the slot position and length in the ground layer, the frequency resonance shift to the lower frequency and it can be applied for antenna size reduction. The simulation results give return loss at 18.55 dB with resonance frequency of 2.43 GHz, fractional bandwidth of 1.65 % and gain of 4.12 dB where it is suitable for industrial scientific and medical (ISM) radio bands. The measurement of fabrication antenna gives resonance frequency at 2.45 GHz with fractional bandwidth of 1.22 % and gain of 3.64 dBi. Therefore, it is shown that the proposed antenna can effectively reduce its size without sacrificing its performance.