Numerical evaluation and optimization of high sensitivity Cu2CdSnSe4 photodetector

This paper deals with the numerical performance evaluation of solar cells based on ZnMgO/CZTS with and without a back-surface field (BSF) layer. ZnMgO is used as a buffer layer due to its non-toxicity and strain-balancing properties at i-ZnO/ZnMgO and ZnMgO/CZTS interfaces. A multilayer structure of ZnO: Al/i-ZnO/ZnMgO/CZTS is considered for the initial analysis. Subsequently, a BSF layer of CZTS material with different optical and electronic properties, called CZTS2, is inserted between the back-contact layer and the existing CZTS layer, called CZTS1, to form a new structure as ZnO: Al/i-ZnO/ZnMgO/CZTS1/CZTS2 to enhance the performance. The performance of the structure with and without the BSF layer was evaluated in terms of various layer parameters such as thickness, band gap, carrier concentration, defect densities, and work function. Then, the effects of operating temperature and the combination of shunt and series resistance on the overall performance were investigated. The simulated results were calibrated with existing experimental data from the literature to validate the work. In the optimized structure with the BSF layer, a maximum efficiency of 23.67% is achieved, which is 4% higher than that of without the BSF layer. The generation and recombination rates of the structures with and without the BSF layer were investigated to understand the reason for the improved efficiency. The results of this work are very promising for the development of high-efficiency, low-cost, and non-toxic CZTS solar cells.

In this study, a photovoltaic (PV) device has been developed by using AgBiS2 as the key material. The simulation of the photovoltaic cell has been performed using the SCAPS-1D simulator to analyze the impact of each layer. The design incorporates three window layers, CdS, In2S3, and ZnSe, alongside six familiar compounds, AlSb, CuGaSe2 (CGS), CuS, MoS2, Sb2S3, and WSe2, as the back surface field (BSF) layers. These heterostructures aim to uncover the potential of AgBiS2 in the realm of photovoltaic technology. When AgBiS2 functions within a singular heterojunction, specifically in configurations such as n-CdS/p-AgBiS2, n-In2S3/p-AgBiS2, and n-ZnSe/p-AgBiS2, the resulting values for open-circuit voltage (V OC) and the short circuit current (J SC) are found to be ∼0.90 V and ∼32 mA/cm2, respectively, while the corresponding power conversion efficiencies (PCE) are 23.56%, 22.60%, and 23.62%, respectively. On the contrary, the incorporation of various BSF layers like AlSb, CGS, CuS, MoS2, Sb2S3, and WSe2 results in a substantial increase in V OC, leading to an enhancement in PCE. Among the AgBiS2 based different dual-heterostructures, the outstanding PCE of 30.04% with a V OC of 1.12 V is achieved by n-ZnSe/p-AgBiS2/p+-Sb2S3 device. In comparison, the n-ZnSe/p-AgBiS2/p+-CGS structure exhibits a similar PCE of 30.03% with a V OC of 1.12 V. Additionally, the n-ZnSe/p-AgBiS2/p+-MoS2 arrangement demonstrates a PCE of 29.95% and a V OC of 1.12 V. The effective band alignments observed at the interfaces of ZnSe/AgBiS2 and AgBiS2/MoS2, ZnSe/AgBiS2 and AgBiS2/CGS, as well as ZnSe/AgBiS2 and AgBiS2/Sb2S3 contribute to a substantial built-in potential, leading to an elevated V OC. As an alternative to ZnSe, the CdS window could offer similar performances, whereas In2S3 might provide a lower efficiency. The elaborate simulation findings highlight the substantial potential of AgBiS2 as an absorber, particularly when coupled with different windows and BSF layers. This opens avenues for experimental research focused on AgBiS2 in the era of photovoltaic cells.

Copper indium gallium selenide (CIGS)-based solar cells have exhibited greater performance than the ones utilizing cadmium telluride (CdTe) or hydrogenated amorphous silicon (a-Si: H) as the absorber. CIGS-based devices are more efficient, considering their device performance, environmentally benign nature, and reduced cost. In this article, we proposed a potential CIGS-absorber-based solar cell with an FTO/ZnSe/CIGS/V2O5/Cu heterostructure, with a V2O5 back-surface field (BSF) layer, SnO2:F (FTO) window layer, and ZnSe buffer layer. Using the solar cell capacitance simulator one-dimensional simulation software, the effects of the presence of the BSF layer, the thickness, bulk defect density, and acceptor density of the absorber layer, buffer layer thickness, interfacial defect density, device resistance, and operating temperature on the open-circuit voltage, short-circuit current, fill factor, and efficiency, as well as on the quantum efficiency and recombination and generation rate, of the device have been explored in detail. The simulation results revealed that only a 1 μm-thick-CIGS absorber layer with V2O5 BSF and ZnSe buffer layers in this structure offers an outstanding efficiency of 31.86% with a VOC of ∼0.9 V. Thus, these outcomes of the CIGS-based proposed heterostructure provide an insightful pathway for fabricating high-efficiency solar cells with performance more promising than the previously reported conventional designs.

In this study, molybdenum diselenide (MoSe2)-based dual-heterojunction with Indium Telluride (In2Te3) as an absorber and a back surface field (BSF) layers with Al/ITO/CdS/MoSe2/In2Te3/Ni heterostructure has been studied by SCAPS-1D simulator. To explore the potentiality of layered materials in photovoltaic devices, a detailed investigation has been executed on the CdS window, MoSe2 absorber, and In2Te3 BSF layers at varied layer thicknesses, carrier concentrations, interface and defect densities, resistances, and operating temperatures. The photoconversion efficiency (PCE) of 24.78% with short circuit current J sc of 30.55 mA cm−2, open circuit voltage V oc of 0.95 V, and fill factor FF of 85.5% were obtained in the reference cell (without the In2Te3 BSF layer), while a notably improved PCE of 29.94% (5.16% higher) with J sc of 31.06 mA cm−2, V oc of 1.10 V, and FF of 87.28% was achieved by inserting the In2Te3 BSF layer. With a favorable band alignment and almost similar chemical and physical properties as transitional metal dichalcogenides (TMDCs) materials, the proposed dual heterostructure with CdS, MoSe2, and In2Te3 exhibits huge potential as a photoactive material and paves a pathway for the fabrication of uniquely layered material-based thin, flexible high-efficiency solar cells.

Numerical simulation of CZTS solar cell with silicon back surface field

We report on a laser doping process for the formation of a local back surface field (BSF) using phosphoric acid (H3PO4) for n-type passivated emitter rear totally diffused silicon solar cells. The sheet resistance of the BSF layer was varied by changing the H3PO4 concentration. The BSF layer was passivated using SiNx. With the passivated BSF, the LBC solar cell shows an improved open circuit voltage. A laser power of 44 mW with 10 kHz resulted in a 45-Ω/sq BSF layer with effective lifetime of 290 μs and a higher Voc of 623 mV. With the optimized laser parameters, devices with the best electrical results yielded a short circuit current density of 36 mA/cm2 and an efficiency of 18.26%.

This research explores a novel design for thin-film solar cells, featuring FeS2 as the absorber layer, CuBi2O4 as the back surface field (BSF) layer, and GaAs as the buffer layer. We carefully evaluate the solar cell’s performance using the SCAPS 1D simulator, including layer thickness, doping levels, and FeS2 and CuBi2O4 defect concentrations. Our n-GaAs/p- FeS2 solar cell exhibits a notable power conversion efficiency (PCE) of 19.19%, a JSC of 46.34 mA/cm2, a VOC of 0.517 V, and an FF of 80.02%. However, our study delves deeper into the intriguing introduction of the CuBi2O4 BSF layer as a second absorber layer in solar cells. This modification boosts PCE to 33.29%, JSC (49.64 mA/cm2), and VOC (0.843 V) while retaining a high FF of 79.58%. The proposed FeS2/CuBi2O4 structure represents an impressive 73.49% improved cell performance compared to the conventional single junction FeS2-based solar cell. Due to the excellent band alignment in the dual-heterojunction arrangement, the efficiency increases significantly. Our study advances FeS2 solar cell optimization, showing the promise of innovative material combinations for photovoltaic technology. Our findings also highlight the importance of adding second absorber layers to improve solar cell efficiency and contribute to sustainable energy.

A comprehensive study of a novel structure for In2S3 based CIGS solar cell has been observed. The effects of the absorber layer and temperature with various back surface field (BSF) layers (SnS/SnTe/MoTe2/GeTe) are analyzed with the SCAPS‐1D simulator. Performances of the ultrathin CIGS solar cell enhanced with the proposed structure of ZnO:Al/i‐ZnO/In2S3/CIGS/BSF/Mo and efficiency reached over 24% with 1000 nm CIGS absorber layer. The cell with SnS BSF layer has obtained 24.41% efficiency but shows less stability with temperature variation. On the other hand, the cell with MoTe2 BSF shows better stability at a higher temperature and reached an efficiency of 24.14%. Besides, the cell with SnTe BSF also suitable for ultrathin In2S3/CIGS, which results in an efficiency of 23.27%. However, the cell with GeTe BSF can give just over 18% efficiency, but it shows greater stability with temperature changes. This study highlights the potential of BSF layer in In2S3/CIGS solar cell enhancing the performance and stability of cells by reducing recombination losses. The incorporation of a 50 nm BSF layer allows further thinning of the absorber layer, reducing material consumption in the fabrication process without sacrificing overall efficiency.

This paper reports the impact of the p-MoSe2 transition metal dichalcogenide as an interfacial layer between the CZTSe absorber and Mo back contact in the CZTSe solar cells. Here, the solar cell capacitance simulator (SCAPS-1D) is employed. The I-V characteristic demonstrated a higher slope in comparison to CZTSe solar cell without considering the interfacial layer. The results show that the p-MoSe2 layer benefits the CZTSe/Mo hetero contact by mediating the quasi- ohmic back contact of the CZTSe solar cell. Accordingly, the conversion efficiency improves from 16.17 % to 23.47 %. To investigate the effect of the p-MoSe2 layer, various performance parameters such as open-circuit voltage (Voc), short circuit current (Jsc), fill factor FF, and efficiency t] were explored at a wide range of thicknesses, bandgap energies, and the carrier concentration. The results revealed that a thickness of the interfacial layer less than 70 nm would cause deterioration of overall cell performance. This is because a low thickness of p-MoSe2 creates high barriers at the CZTS/p-MoSe2 and p-MoSe2/Mo interfaces, which impedes the drift process of photogenerated holes. Additionally, increasing the acceptor carrier concentration doping (NA) above 1017 cm3 results in an improved cell performance due to the enhanced band alignment at the back contact. The obtained values of the Voc and Jsc are 0.74 V and 42.6 mA/cm2, respectively.

The study of AgInS2 solar cell using simulation software wxAMPS

Faced with an alarming increase of energy consumption on one side, and very limiting amounts of available conventional energy sources on the other, scientists have turned to the most promising, renewable energy sources. Possibilities for the application of solar systems based on photovoltaic conversion of solar energy are very wide, primarily because of their relatively low cost and very important fact that solar energy is most acceptable source of electrical energy from the environmental point of view. Recently, increased investments in the development of PV technology are observed worldwide. Photovoltaic (PV) conversion of solar energy is one of the most up-to-date semiconductor technologies that enables application of PV systems for various purposes. The wider substitution of conventional energies by solar energy lies in the rate of developing solar cell technology. Silicon is still the mostly used element for solar cell production, so efforts are directed to the improvement of physical properties of silicon structures. Silicon solar cells belong to a wide group of semiconductor detector devises, though somewhat specific in its design (larger than most of the detectors). Basic part of solar cell is p-n junction, which active part is less that 0.2μm thick, so it could be treated as thin film. This photosensitive layer have the most important influence on solar cell functioning, primarily on creation of electron-hole pairs under solar irradiation, transport properties in cells, formation of internal field, and finally, output characteristics of the device such as short circuit current, open circuit voltage and efficiency. Furthermore, in order to function as a voltage generator with the best possible performances, beside p-n junction other thin films such as contact, antireflective, protective (oxide) thin films must be applied both on the front and on the back surface of solar cells. Also, in order to improve characteristics of the device, MIS structure (thin oxide layers) and back surface field layers are routinely used. Since thin films are very important in many fields of modern science (solar cell technology, for example), a large number of methods were developed for their characterization. Characterization of thin films includes investigations of physical processes in them, developing of the methods for measuring major physical and electrical properties and their

The goal of this research is to analyse conversion efficiency (CE) of proposed copper indium gallium di-selenide (CIGS) thin film solar cell (TFSC) by incorporating perovskite along with CIGS. The performance enhancement is done by introducing a back surface field (BSF) and employing molybdenum (Mo) as a back contact. The possible effects on photovoltaic constraints of the perovskite/CIGS TFSC along with BSF have been examined by SCAPS-1D. The proposed (BaSi2/CIGS/Cs2AgBiBr6/TiO2/FTO/Mo/ Substrate) perovskite/CIGS thin film solar cell shows CE of 28.94 %. The parameters of thin film solar cell were varied for achieve optimized value which will lead to increase in efficiency. The optimized values of perovskite/CIGS TFSC were obtained that is CIGS thickness of 0.9 µm and BSF of 0.5 µm. In addition to this TFSC has been explored in terms of acceptor density, defect density and temperature of the device.

Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer

Heterojunction between crystalline silicon and nanocomposite coupled ZnO·SnO2 and optimization of its photovoltaic performance

We employ simulation based approach for enhancing the efficiency of Cu2ZnSnS4 (CZTS) based solar cells. Initial benchmarking of simulation with the experimentally reported solar cell in literature is performed by incorporating a suitable defect model. We then explore the effects of (a) conduction band offset (CBO) at CZTS/CdS junction, (b) back surface field (BSF) due to an additional layer with higher carrier density, and (c) high work function back contact. Efficiency is observed to improve by about 70% upon optimizing the above three parameters. We also observe that utilizing BSF in the configuration can reduce the high work function requirement of the back contact. A work function of 5.2 eV (e.g., using Ni), a BSF layer (e.g., using SnS), and a CBO of 0.1 eV (e.g., using ZnS) constitute an optimal configuration.