Simple framework for systematic high-fidelity gate operations

<sec>Spin qubits in silicon-based semiconductor quantum dots have become one of the prominent candidates for realizing fault-tolerant quantum computing due to their long coherence time, good controllability, and compatibility with modern advanced integrated circuit manufacturing processes. In recent years, due to the remarkable advances in silicon-based materials, the structure of quantum dot and its fabrication process, and qubit manipulation technology, the great progress of high-fidelity state preparation and readout, single- and two-qubit gates of spin qubits for silicon based semiconductor quantum computation has been achieved. The control fidelities for single- and two-qubit gates all exceed 99%—fault tolerance threshold required by the surface code known for its exceptionally high tolerance to errors. In this paper, we briefly introduce the basic concepts of silicon-based semiconductor quantum dots, discuss the state-of-art technologies used to improve the fidelities of single- and two-qubit gates, and finally highlight the research directions that should be focused on.</sec><sec>This paper is organized as follows. Firstly, we introduce three major types of quantum dot (QD) devices fabricated on different silicon-based substrates, including Si/SiGe heterojunction and Si/SiO<sub>2</sub>. The spin degree of electron or nucleus hosted in QD can be encoded into spin qubits. Electron spin qubits can be thermally initialized to ground state by using an electron reservoirs, and can be read out by spin-charge conversion mechanism: energy-selective readout (Elzerman readout) with reservoirs or Pauli spin blockade (PSB) without reservoirs. Additionally, high fidelity single-shot readout has been demonstrated by using radio-frequency gate reflectometry combined with the PSB, which has unique advantages in large-scale qubit array. To coherently control the spin qubits, electron dipole resonance (ESR) or electron dipole spin resonance (EDSR) for electron and nuclear magnetic resonance (NMR) for nucleus are introduced. With the help of isotope purification greatly improving the dephasing time of qubit and fast single-qubit manipulation based on EDSR, fidelity above 99.9% can be reached. For the two-qubit gates based on exchange interaction between electron spins, the strength of interaction <inline-formula><tex-math id="M1">\begin{document}$ J $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M1.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M1.png"/></alternatives></inline-formula> combined with Zeeman energy difference <inline-formula><tex-math id="M2">\begin{document}$ \Delta {E}_{z} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M2.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M2.png"/></alternatives></inline-formula> determines the energy levels of system, which lead to the different two-qubit gates, such as controlled-Z (CZ), controlled-Rotation (CROT), and the square root of the SWAP gate (<inline-formula><tex-math id="M3">\begin{document}$ \sqrt{\rm{S}\rm{W}\rm{A}\rm{P}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M3.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M3.png"/></alternatives></inline-formula>) gates. In order to improve the fidelity of two-qubit gates, a series of key technologies is used experimentally, they being isotope purification, symmetry operation, careful Hamiltonian engineering, and gate set tomography. Fidelity of two-qubit gates exceeding 99% has been demonstrated for electron spin qubits in Si/SiGe quantum dots and nuclear spin qubits in donors. These advances have pushed the silicon-based spin qubit platform to become a major stepping stone towards fault-tolerant quantum computation. Finally, we discuss the future study of spin qubits, that is, how to effectively expand the number of qubits, and many other problems to be explored and solved.</sec>

Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due to 1/f charge noise for two electrons in a double quantum dot used for a two-qubit controlled-phase gate. In contrast to the usual belief, spin decoherence can be dominated by the tunneling noise from 1/f charge noise instead of the detuning noise. Tunneling noise can dominate because the effect of tunneling noise on the spin qubit is first order in the charge admixture; while the effect of the detuning noise is only second order. The different orders of contributions result in different detuning dependence of the decoherence, which provides a way to identify the noise source. We find that decoherence in a recent two-qubit experiment was dominated by the tunneling noise from 1/f charge noise. The results illustrate the importance of considering tunneling noise to design optimal operation of spin qubits.

We propose a scalable neutral atom quantum computer with an on-demand interaction through a selective two-qubit gate operation. Atoms are trapped by a lattice of near field Fresnel diffraction lights so that each trap captures a single atom. One-qubit gate operation is implemented by a gate control laser beam which is applied to an individual atom. Two-qubit gate operation between an arbitrary pair of atoms is implemented by sending these atoms to a state-dependent optical lattice and making them collide so that a particular two-qubit state acquires a dynamical phase. We give numerical evaluations corresponding to these processes, from which we estimate the upper bound of a two-qubit gate operation time and corresponding gate fidelity. Our proposal is feasible within currently available technology developed in cold atom gas, MEMS, nanolithography, and various areas in optics.

We propose a two-qubit quantum logic gate between a superconducting atom and a propagating microwave photon. The atomic qubit is encoded on its lowest two levels and the photonic qubit is encoded on its carrier frequencies. The gate operation completes deterministically upon reflection of a photon, and various two-qubit gates (SWAP, $\sqrt{\rm SWAP}$, and Identity) are realized through {\it in situ} control of the drive field. The proposed gate is applicable to construction of a network of superconducting atoms, which enables gate operations between non-neighboring atoms.

Quantum computation requires high-fidelity single-qubit and two-qubit gates on a scalable platform. Silicon spin qubits are a promising platform toward realization of this goal. In this paper we show how to perform single-qubit and controlled-Z (cz) gates in a linear chain of three spin qubits with always-on exchange coupling, which is relevant for certain dot- and donor-based silicon devices. We also show how to make the cz gate robust against both charge noise and pulse length error using a two-tone pulse shaping method. The robust pulse maintains a fidelity of 99.99% at 3.5% fluctuations in exchange or pulse amplitude, which is an improvement over the uncorrected pulses where this fidelity can only be maintained for fluctuations in exchange up to 2% or up to 0.2% in amplitude.

Achieving fast and high-fidelity qubit operations is crucial for unlocking the potential of quantum computers. In particular, reaching low gate errors in two-qubit gates has been a long-standing challenge in the field of superconducting qubits due to their typically long duration relative to coherence times. To realize fast gates, we use the hybridization between fixed-frequency superconducting qubits with a strongly interacting coupler mode that is tunable in frequency. To reduce population leakage during required adiabatic passages through avoided level crossings, we employ a sensitivity-adaptive closed-loop optimization method to design complex pulse shapes. We compare the performance of Gaussian-square, Fourier-series, and piecewise-constant-slope pulse parametrizations and are able to reach 99.9% controlled-<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline"><a:mi>Z</a:mi></a:math>-gate fidelity using a 64-ns-long Fourier-series pulse defined by only seven parameters. These high-fidelity values are achieved by analyzing the optimized pulse shapes to identify and systematically mitigate signal-line distortions in the experiment. To improve the convergence speed of the optimization, we implement an adaptive cost function, which continuously maximizes the sensitivity. The demonstrated method can be used for tune-up and recalibration of superconducting quantum processors.

We present a theory for understanding the exchange interaction between electron spins in neighboring quantum dots, either by changing the detuning of the two quantum dots or independently tuning the tunneling barrier between quantum dots. The Hubbard model and a more realistic confining-potential model are used to investigate how the tilting and barrier control affect the effective exchange coupling and thus the gate fidelity in both the detuning and symmetric regimes. We show that the exchange coupling is less sensitive to the charge noise through tunnel barrier control (while allowing for exchange coupling operations on a sweet spot where the exchange interaction has zero derivative with respect to the detuning). Both GaAs and Si quantum dots are considered and we compare our results with experimental data showing qualitative agreements. Our results answer the open question of why barrier gates are preferable to tilt gates for exchange-base gate operations.

In recent advancements of quantum computing utilizing spin qubits, it has been demonstrated that this platform possesses the potential for implementing two-qubit gates with fidelities exceeding 99.5%. However, as with other qubit platforms, it is not feasible to completely turn qubit couplings off. This study aims to investigate the impact of coherent error matrices in gate set tomography by employing a double quantum dot. We evaluate the infidelity caused by residual exchange between spins and compare various mitigation approaches, including the use of adjusted timing through simple drives, considering different parameter settings in the presence of charge noise. Furthermore, we extend our analysis to larger arrays of exchange-coupled spin qubits to provide an estimation of the expected fidelity. In particular, we demonstrate the influence of residual exchange on a single-qubit Y gate and the native two-qubit SWAP gate in a linear chain. Our findings emphasize the significance of accounting for residual exchange when scaling up spin-qubit devices and highlight the tradeoff between the effects of charge noise and residual exchange in mitigation techniques. Published by the American Physical Society 2024

It is shown that a two-qubit phase gate and SWAP operation between ground states of cold trapped ions can be realized in one step by simultaneously applying two laser fields. Cooling during gate operations is possible without perturbing the computation. On the contrary, the cooling lasers even stabilize the desired time evolution of the system. This affords gate operation times of nearly the same order of magnitude as the inverse coupling constant of the ions to a common vibrational mode.

Fault-tolerant quantum computers that can solve hard problems rely on quantum error correction1. One of the most promising error correction codes is the surface code2, which requires universal gate fidelities exceeding an error correction threshold of 99 per cent3. Among the many qubit platforms, only superconducting circuits4, trapped ions5 and nitrogen-vacancy centres in diamond6 have delivered this requirement. Electron spin qubits in silicon7-15 are particularly promising for a large-scale quantum computer owing to their nanofabrication capability, but the two-qubit gate fidelity has been limited to 98 per cent owing to the slow operation16. Here we demonstrate a two-qubit gate fidelity of 99.5 per cent, along with single-qubit gate fidelities of 99.8 per cent, in silicon spin qubits by fast electrical control using a micromagnet-induced gradient field and a tunable two-qubit coupling. We identify the qubit rotation speed and coupling strength where we robustly achieve high-fidelity gates. We realize Deutsch-Jozsa and Grover search algorithms with high success rates using our universal gate set. Our results demonstrate universal gate fidelity beyond the fault-tolerance threshold and may enable scalable silicon quantum computers.

A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.

Quantum dot-based single spin qubit systems are resilient towards charge noise and are primarily affected by the noise due to magnetic interactions. Qubit interaction with the environment causes relaxation and decoherence of their quantum states. Hyperfine interaction due to spin of nuclei surrounding the electron and phononic interaction due to spin-orbit interaction are the dominant mechanisms through which GaAs-based quantum dot (QD) qubits undergo decoherence. The external control parameters i.e. static and ac magnetic fields are directly related to the decoherence. This limits the range of values of these parameters for which gate operations can be done successfully. In this work, using a single qubit NOT gate operation, we investigate the impact of varying static and ac magnetic fields on decoherence suppression. We report an increment in the usable range of the static magnetic field value with an increase in ac magnetic field strength in low and high static magnetic field regimes.

We demonstrate that exciting possible realizations of quantum Floquet matter are within reach for modern silicon spin qubits based in quantum dots, most notably the discrete time crystal (DTC). This is significant given that spin qubits have fallen behind other qubit architectures in terms of size and control. However, silicon spin qubits are especially well suited to this task as the charge noise that usually foils gate operations can now be leveraged as an asset in this time-crystal realization. We illustrate differences between prethermal phenomena and true time-crystalline spatiotemporal order. We demonstrate that even for a spin chain of four qubits, rich regime structures can be established by observing signatures of the discrete time crystal and the Floquet symmetry-protected topological regime both distinct from the thermal regime. We also analyze the persistence of these signatures at longer chain lengths, showing that the DTC lifetime grows exponentially with the system length and that these signatures may even be detectable for chains as small as three qubits. We also discuss the effects of longer pulse durations and the effectiveness of pulse sequences for converting the exchange interaction to an Ising model. Our theoretical predictions are well suited for immediate experimental implementations using currently existing quantum dot spin qubit systems.

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a 28Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick 28Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29 ± 0.02 μeV/Hz½ at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to CZ-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.

Course 9 Solid state quantum bit circuits