Stochastic geometry analysis of interference and coverage in Terahertz networks

Researchers are interested in unmanned aerial vehicles (UAVs) because they have many uses in current 5G and future 6G networks and are safer than human-operated vehicles. Terahertz (THz)-band communications are a possible option in 6G for fast communication. THz wireless communication between UAVs is taken into consideration in this work. Different fading channels, which are significant influencing factors in THz communication channel modeling, are used to analyze the performance of UAV communications in THz networks. Consideration must be made to the structure, wireless channel parameters, and transmission characteristics when evaluating the performance of wireless technology. Nakagami-m, Rician, Weibull, and Rayleigh fading channels are all taken into consideration, along with log-normal fading. Moreover, an optimization algorithm for the THz channel is presented, which is meant to minimize transmission power by optimizing the trajectory of uplink and downlink transmissions between the UAV and users. The equations of the UAV locations and the transmission power optimization of each user are derived. Analytical formulations regarding capacity, outage probability, and bit error rate (BER) are generated when performance-influencing factors are taken into account. The analytical analysis is supported by the numerical results that are provided.

Terahertz (THz) wave science and technology have been found countless applications in biomedical imaging, security screening, and non-destructive testing as they approach maturity. However, due to the challenge of high ambient moisture absorption, the development of remote open-air broadband THz spectroscopy technology is lagging behind the compelling need that exists in homeland security, astronomy and environmental monitoring. Furthermore, the underlying physical mechanisms behind the interaction between the THz wave and laserinduced plasma which responds strongly to electromagnetic waves have not been fully understood. This review aims to explain the light-plasma interaction at THz frequencies within a semiclassical framework along with experimental study of the femtosecond-laserinduced nitrogen plasma fluorescence under the illumination of single-cycle THz pulses. The results indicate that THz-radiation-enhanced-emission-of-fluorescence (THz-REEF) is dominated by electron kinetics in the THz field and the electron-impact excitation of gas molecules/ions. The information of the time-dependent THz field can be recovered from the measured time-resolved THz-REEF from single-color laser induced plasma with the help of the bias as local oscillator. The calculations and experimental verification lead to complete understanding of the science behind these effects and push forward to extend their capabilities in related applications such as remote THz sensing, plasma diagnostics and ultrafast photoluminescence modulation. Systematic studies in selected gases including neon, argon, krypton, xenon, methane (CH4), ethane (C2H6), propane (C3H8), and n-butane (C4H10) gases were performed to obtain an improved understanding of the THz-REEF. The dependences of the enhanced fluorescence on the THz field, laser excitation intensity, gas pressure, and intrinsic atomic properties were experimentally characterized. Both narrow line emission and broad continuum emission of the gas plasma were enhanced by the THz field. Their fluorescence enhancement ratios and time-resolved enhanced fluorescence were largely dependent on the scattering cross section and ionization potential of atoms. For the first time, we demonstrated a novel ‘all-optical’ technique of broadband THz wave remote sensing by coherently manipulating the fluorescence emission from asymmetrically ionized gas plasma that interacted with THz waves. By studying the ultrafast electron dynamics under the single cycle THz radiation, we found that the fluorescence emission from laser-induced air plasma was highly dependent on the THz electric field and the symmetry of the electron drift velocity distribution created by two-color laser fields. The time-resolved THz-REEF can be tailored by switching the relative two-color phase and laser polarizations. Owing to the high atmospheric transparency and omni-directional emission pattern of fluorescence, this technique can be used to measure THz pulses at standoff distances with minimal water vapor absorption and unlimited directionality for optical signal collection. The coherent THz wave detection at a distance of 10 m had been demonstrated. The combination of this method and previously demonstrated remote THz generation would eventually make remote THz spectroscopy available. We also introduced a unique plasma diagnostic method utilizing the THz-wave-enhanced fluorescence emission from the excited atoms or molecules. The electron relaxation time and plasma density were deduced through applying the electron impact excitation/ionization and electron-ion recombination processes to the measured time-delay-dependent enhanced fluorescence. The electron collision dynamics of nitrogen plasma excited at different gas pressures and laser pulse energies were systematically investigated. This plasma diagnostic method offers picosecond temporal resolution and is capable of omnidirectional optical signal collection. The ultrafast quenching dynamics of laser-pulse-induced photoluminescence in semiconductors under the radiation of single-cycle THz pulses was studied. It was found that the quenching in both cadmium telluride (CdTe) and gallium arsenide (GaAs) was linearly proportional to the intensity of incident THz waves and reaches up to 17% and 4% respectively at the peak intensity of 13 MW/cm2. The THz-wave-induced heating of the carriers and lattice and the subsequent decreased efficiency of photocarrier generation and recombination were most likely to be responsible for the quenching. This is potentially useful for the applications of a non-invasive ultrafast light modulator for photoluminescence devices with picoseconds switching time in the fields of the light-emitting devices and optical communication.

The ever-growing number of interconnected devices and the emergence of high-bandwidth technologies such as holographic communications in mixed reality are driving an exponential growth in the demand for terabits-per-second (Tbps) data rates with sub-milliseconds latency. For this reason, the sixth-generation (6G) wireless communications are moving towards the terahertz (THz) frequency band because of its wider spectral bandwidth availability to enable higher channel capacity and data rates according to the Shannon-Hartley theorem. However, the efficiency of wireless THz signal transmission is reduced by the increased path loss and atmospheric attenuation due to water vapor absorption at THz frequencies, which significantly decreases the signal-to-noise ratio and the spectral efficiency of THz wireless communications. The realization of THz band communications is further impeded by the limited power output of existing compact THz sources due to the extremely low conversion efficiencies. Therefore, it is crucial to develop broadband THz integrated circuits with waveguiding and beamforming functionalities for supporting high data-rate on-chip communications and to provide sufficient gains to counteract the path loss and limited power of THz wireless transmissions. This thesis aims to improve the spectral efficiency of 6G wireless communications via the spatiotemporal shaping of THz waves using silicon photonics. Spatiotemporal light shaping is the basis of nearly all THz photonic devices, ranging from THz wavefront manipulation using metasurfaces to THz planar waveguiding using photonic crystal waveguides. Silicon photonics is a promising material platform for THz wave shaping due to the low-loss propagation of THz waves in high-resistivity silicon and the prospect of a monolithic integrated circuit due to the complementary metal-oxide semiconductor (CMOS) fabrication process compatibility. Silicon metasurfaces allow the wavefront modulation of incident THz radiation by exploiting the generalized Snell’s law of refraction and reflection to beamform highly directional THz waves in a dynamic multi-user communication environment for enhancing the spectral efficiency. Likewise, broadband silicon photonic crystal waveguides allow the in-plane and lossless transport of THz waves to support on-chip high data-rate THz communications that can also seamlessly integrate multiple THz photonic devices in a THz integrated circuit. In addition, silicon electron emitters and silicon gratings potentially allow the on-chip generation of highly intense and broadband THz radiation to counteract the significant THz attenuation. In this thesis, spatiotemporal wave shaping techniques using silicon photonics for enhancing the spectral efficiency of THz band communications is presented. First, a self-adaptive and deep reinforcement learning model for THz beamforming is proposed, which can beamform multiple highly directional THz radiation beam in real-time to serve a dynamically changing multi-user communication environment and improve the signal-to-noise ratio of THz wireless transmission while potentially reducing the communication latency. Second, a broadband THz topological silicon waveguide designed based on valley photonic crystals is proposed for the robust and lossless transport of broadband THz waves for the construction of THz integrated circuits with broadband channel capacity for enabling higher data-rate on-chip communication. Last, the versatility of free-electron radiation from silicon gratings is investigated for the generation of highly intense spatiotemporal wave packets with user-designed group velocities and tunable intensity profile, with the potential to realize integrated high-power THz sources. The deep learning beamforming model, the broadband topological waveguide designs, and the free-electron radiation intensity shaping techniques presented in this thesis extends beyond the THz regime and are scalable across the entire electromagnetic spectrum. The CMOS process compatibility of silicon metasurfaces, silicon planar waveguides, along with silicon electron emitters and silicon gratings offers the opportunity to realize a broadband THz photonic integrated circuit with waveguiding, wave generation and beamforming functionalities for enhancing the spectral efficiency of THz communications in 6G wireless networks.

Terahertz (THz) band communication is a promising pillar technology to satisfy the demands of intelligent information society. The ultra-broad bandwidth in the THz band provides a great potential of a plethora of applications and services. However, THz wireless communication systems encounter stringent challenges, including more severe Doppler effects and more strict peak-to-average power ratio (PAPR) requirements. In this work, a discrete Fourier transform spread orthogonal time frequency space (DFT-s-OTFS) modulation scheme is proposed to address these issues of THz communications. The proposed DFT-s-OTFS can improve the bit error rate (BER) performance by two orders of magnitude compared to orthogonal frequency division multiplexing (OFDM) in presence of high Doppler spread, and reduce the PAPR by approximately 3 dB in contrast with OTFS.

This paper presents the modelling and analysis of graphene based monopole antennas for Terahertz (THz) Band communications in micro-networks. Graphene is used as a conductor for radiating patch and ground in monopole antenna structures. Polyimide of thickness 143 µm is used as substrate with relative permittivity of 3.5. Two types of antennas were modelled; one is narrowband resonating at 0.1 THz and the other is wideband operating in 0.030-0.117 THz band. The second antenna has broader impedance bandwidth (>10%) in the band of operation.

Nowadays, many wireless communication applications and services demand high capacity and bandwidth. Experts expect that in next few years, communications markets need to use high data rates up to 40 Gbps. For meeting the requirements of high data rate, bands up to 3 THz hold promise as they can achieve data rates up to a few tens of Gbps. The bands ranging from 275 to 3,000 GHz are known as terahertz (THz) bands. THz bands are not assigned yet globally for dedicated services and communication applications. The implementation of THz communication requires various kinds of evaluations and effort in order to assess different aspects related to channel characterizations, THz system designs, propagation, algorithms and techniques for signal processing, platform configurations, in addition to security and privacy issues. The evaluation and assessment should also consider the statistical parameters and measurements of the channels. This chapter introduces the key aspects of THz channel specifications and related considerations. In addition, a comparison between mm-waves and THz channel characteristics is made. The chapter also discusses the theoretical concepts of THz channel characterizations, limitations, requirements, and methodologies for measurements including a comparison between different channel analyses. Moreover, the chapter provides a brief description of THz channel characterization in nano communications.

Second-order nonlinear optical wavelength-conversion has been attractive for generating terahertz (THz) wave with high peak-power and for THz-wave detection with high sensitivity. Over 50 kilowatt peak-power THz-wave radiation and sensitive THz-wave detection down to several tens of atto-joule using LiNbO 3 or 4-dimethylamino- N’ -methyl-4’- stilbazolium tosylate (DAST) crystals have been demonstrated. LiNbO 3 crystal is an eminent nonlinear crystal for converting wavelengths between THz wave and near infrared (NIR) at frequency range from 1 to 3 THz. Mixing THz wave with an intense NIR pump beam in the LiNbO 3 provides generation of a signal light at a different frequency because of efficient figure of merit. Additionally, sensitivity of up-conversion detection working at room temperature is more than that of cryogenically cooled THz detector. Here, we report on a sensitive THz-wave detection based on novel design using a slant-stripe-type periodically poled Mg doped lithium niobate (PPMgLN) for practical use. The efficient scheme that two optical waves, the pump and up-conversion signal beams, propagate collinearly in the PPMgLN to achieve effective parametric amplification for the signal beam was designed. Minimum THz-wave detection was achieved down to energy about 100 aJ at the frequency of 1.6 THz. The result leads to a novel THz detector based on fiber and integrated optics with high sensitivity, robustness, and easy handling. The nonlinear optical up-conversion detection is promising and broadening THz horizons.

Terahertz (THz)-band (0.1-10 THz) communication has been envisioned as a key technology to enable wireless Terabit-per-second (Tbps) links. At THz frequencies, the path-loss is governed by the spreading loss and the molecular absorption loss. The latter also determines the available transmission bandwidth, which drastically shrinks with distance. As a result, traditional modulation schemes cannot fully take advantage the THz channel, and new modulation schemes are needed if THz channel communications are going to reach their full potential. Several solutions have been presented including Hierarchical Bandwidth Modulations (HBM), which is the only presented work that not only compensates for molecular absorption losses but leverages those losses to improve the capabilities of the system. The focus of this thesis is two-fold. First the design of HBM is formalized, exploring the trade-offs and achievable performance as a function of system parameters. Secondly, these trade-offs and performance metrics are verified using a one-of-a-kind experimental testbed for ultrabroadband communication networks. The results show that with proper design HBM successfully achieves its goal of exploiting the distance-dependent characteristics of the THz channel.--Author's abstract

While 5G is being widely deployed around the world, the efforts from both academia and industry have started to investigate various promising 6G techniques, among which Terahertz (THz) systems have drawn much research attention. Recent developments in nanotechnology have enabled electromagnetic nano-communications in the THz band for supporting very large bandwidths with ultra-high data rates over 6G big-data-driven nano-networks. One of the major bottlenecks over such networks is the very limited energy that can be accessed by nano devices. Towards this end, novel energy harvesting (EH) mechanisms have been proposed to remedy this energy scarcity problem. However, how to accurately model and characterize the relationships among THz-band wireless channel, energy consumption, and EH models still remains a challenging and open problem. To solve the abovementioned problems, we propose to develop a joint optimal resource allocation policy for self-powered nano devices to achieve the maximum channel capacity in the THz band over EH-based nano-networks. Particularly, using the Time-Spread On-Off Keying (TS-OOK) modulation mechanism, we establish the wireless communication and EH models in the THz band. Then, we formulate and solve the channel capacity maximization problem under several different constraints for our proposed THz-band EH-based schemes. Simulation results are included, which evaluate and validate our proposed EH-based nano-communication schemes in the THz band.

In this paper, we compare the performance of two main MIMO techniques, beamforming and multiplexing, in the Terahertz (THz) band. The main problem with the THz band is its huge propagation loss, which is caused by the tremendous signal attenuation due to molecule absorption of the electro-magnetic wave. To overcome the path loss issue, massive MIMO has been suggested to be employed in the network and is expected to provide Tbps for a distance within a few meters. In this context, beamforming is studied recently as the main technique to take advantage of MIMO in THz and overcome the very high path loss with the assumption that the THz communication channel is Line-of- Sight (LoS) and there are not significant multipath rays. On the other hand, recent studies also showed that the well- known absorbed energy by molecules can be re-radiated immediately in the same frequency. Such re-radiated signal is correlated with the main signal and can provide rich scattering paths for the communication channel. This means that a significant MIMO multiplexing gain can be achieved even in a LoS scenario for the THz band. Our simulation results reveal a surprising observation that the MIMO multiplexing could be a better choice than the MIMO beamforming under certain conditions in THz communications.

The TeraNova platform: An integrated testbed for ultra-broadband wireless communications at true Terahertz frequencies

Wireless data rates have doubled every eighteen months for the last three decades. Following this trend, Terabit-per-second links will become a reality within the next five years. In this context, Terahertz (THz) band (0.1-10 THz) communication is envisioned as a key technology of the next decade. Despite major progress towards developing THz sources, compact signal generators above 1 THz able to efficiently work at room temperature are still missing. Recently, the use of hybrid graphene/semiconductor high-electron-mobility transistors (HEMT) has been proposed as a way to generate Surface Plasmon Polariton (SPP) waves at THz frequencies. Compact size, room-temperature operation and tunability of the graphene layer, in addition to possibility for large scale integration, motivate the exploration of this approach. In this paper, a simulation model of hybrid graphene/semiconductor HEMT-based THz sources is developed. More specifically, first, the necessary conditions for the so-called Dyakonov-Shur instability to arise within the HEMT channel are derived, and the impact of imperfect boundary conditions is analyzed. Second, the required conditions for coupling between a confined plasma wave in the HEMT channel and a SPP wave in graphene are derived, by starting from the coupling analysis between two 2DEG. Multi-physics simulation are conducted by integrating the hydrodynamic equations for the description of the HEMT device with Maxwell’s equations for SPP modeling. Extensive results are provided to analyze the impact of different design elements on the THz signal source. This work will guide the experimental fabrication and characterization of the devices.

The integrated sensing and communication (ISAC) systems up to the terahertz (THz) band play a crucial role across myriad applications in the 6G technology. Nevertheless, due to the absence of ultra-wideband electrooptic devices, previously reported THz-ISAC systems which usually implement THz linear frequency modulation (LFM) dechirping and THz signal demodulation based on THz electrical mixers are still unable to achieve full-photonic synthesis of radar sensing and communication in the THz band. We present a simultaneous full-photonic dechirping and demodulation THz-ISAC system based on the thin-film lithium niobate Mach–Zehnder modulator (TFLN-MZM). In the THz-ISAC signal generation, coherent optical carrier generation based on an optical frequency comb (OFC) is used to generate the LFM-QPSK signal, and full-photonic dechirping of W-band LFM signals is realized via an ultra-wideband TFLN-MZM in the radar dechirping receiver. Besides, to achieve full-photonic ISAC processing, a homologous coherent receiver based on the TFLN-MZM is demonstrated to demodulate the THz-ISAC signal. In the experiment, we evaluate the impact of overlapping bandwidths of LFM and QPSK signals on system performance. According to the experimental results, the demonstrated THz-ISAC system attains a range resolution of 7 mm and a data rate of 22 Gbit/s QPSK with frequency up to 110 GHz. The demonstrated simultaneously full-photonic dechirping and demodulation THz-ISAC system with mm-scale resolution is beneficial to the 6G applications in the future.

Terahertz (THz) science and technology have greatly progressed over the past two decades to a point where the THz region of the electromagnetic spectrum is now a mature research area with many fundamental and practical applications. Furthermore, THz imaging is positioned to play a key role in many industrial applications, as THz technology is steadily shifting from university-grade instrumentation to commercial systems. In this context, the objective of this review is to discuss recent advances in THz imaging with an emphasis on the modalities that could enable real-time high-resolution imaging. To this end, we first discuss several key imaging modalities developed over the years: THz transmission, reflection, and conductivity imaging; THz pulsed imaging; THz computed tomography; and THz near-field imaging. Then, we discuss several enabling technologies for real-time THz imaging within the time-domain spectroscopy paradigm: fast optical delay lines, photoconductive antenna arrays, and electro-optic sampling with cameras. Next, we discuss the advances in THz cameras, particularly THz thermal cameras and THz field-effect transistor cameras. Finally, we overview the most recent techniques that enable fast THz imaging with single-pixel detectors: mechanical beam-steering, compressive sensing, spectral encoding, and fast Fourier optics. We believe that this critical and comprehensive review of enabling hardware, instrumentation, algorithms, and potential applications in real-time high-resolution THz imaging can serve a diverse community of fundamental and applied scientists.

We present experimental results of an investigation into the performance of a commercial, packaged GaAs high-electron-mobility transistor (HEMT) as a detector of terahertz (THz) radiation in the frequency ranges 0.22–0.32 and 0.520–0.650 THz. Enclosed in a standard ceramic housing and without a dedicated antenna for radiation coupling, the transistor is capable of sensitive direct detection (power detection) of THz radiation at room temperature. The device responsivity shows a strong variation with wavelength, indicating that various device features (transistor metallization, contact pads, wires) act as an effective THz antenna. With the THz radiation focused with a parabolic mirror (and without a substrate lens), the maximum responsivity reaches 2.5 and 0.72 V/W with values of the minimum optical noise-equivalent power (NEP) of 1.4 and 2.5 nW/ $\sqrt{\mathrm{Hz}}$ at the sensitivity peaks at 0.271 and 0.632 THz, respectively. The performance of the HEMT, in comparison with antenna-coupled FET detectors optimized for THz detection (TeraFETs), can be assessed better if the responsivity and the NEP are referred to the effective antenna cross-section determined experimentally for the device. We arrive at a cross-sectional responsivity of 42 V/W (1.6 V/W) and a cross-sectional NEP of 135 pW/ $\sqrt{\mathrm{Hz}}$ (1250 pW/ $\sqrt{\mathrm{Hz}}$ ) at 0.271 THz (0.632 THz), for measurements through the ceramic cap. The cross-sectional NEP values are about one order of magnitude at 0.271 THz and two orders of magnitude at 0.632 THz higher than those achieved with the best TeraFETs, yet in a range where they enable many practical applications at low cost for the detector.