- Conference Article
4
- 10.1109/eptc56328.2022.10013122
Fan-Out Higher Layer Heterogeneous Solution in HPC Application
- Dec 07, 2022
- Feng Kao + 5 more +5
In recent year, based on high performance computing (HPC) and big data computing (BDC) application need to upgrade these performance incudes high process rates, high communication rate and low latencies. As transistor scaling reaches physical and economic barriers, the performance and cost of transistors are increasingly lagging behind the historical Moore's Law trajectory. Heterogeneous integration of SiP (system in package), 2.5D and fan-out solutions are driving the beyond Moore vision. In this paper, it is demonstrated that one of fan-out technology is to provide the high RDL layer count and fine RDL line width and line space, called FO-MCM (fan-out multi-chip modules). The FOMCM used organic interposer is applied lower RC delay and the high I/O density interconnection for HBM dies integration in comparison to 2.5D with the whole piece of Si interposer. Since HPC and BDC application performance derived High Bandwidth Memory grow up, that also impact the assembly package structure in parallel. The next general HBM need more metal layers to keep the performance in high frequency compare to original package design. SPIL's FO-MCM development integrates chips by 1 ASIC die and 2 HBM with 4–6 layers RDL show in Fig. 1. Since FOMCM used organic interposer to bridge chips, this kind of package can provide the solution which is cheaper than 2.5D and has simply vendor management to the end customer. As such, an overview of Fan-out integration solution associated with HBM will be presented in this paper.
Read more