- Book Chapter
- 10.1007/978-3-319-04573-3_107
Effect of Drain FODs on ESD/LU Immunities in the 60-V High-Voltage nLDMOS
- Jan 01, 2014
- Shen-Li Chen + 5 more +5
Electrostatic discharge (ESD) and latch-up (LU) are the most challenging problems in high-voltage (HV) ICs due to their high power supply voltages. So, an HV LDMOS should be compromised with a high driving capability and high reliability, but it always has obvious conflicts. An MOSFET device fabricated by a multi-finger structure can’t completely turn on, which resulting in the ESD capacity per unit length is very low especially for an HV device. Then, the non-uniform turned-on phenomenon in an LDMOS is seriously impacted the ESD reliability. Therefore, a drain-side engineering is investigated in this paper, which is by adding a field-oxide-device (FOD) structure in the drain side. Does it can solve the non-uniform turned-on problem? After a systematic analysis, it is found that by adding FOD structures in the drain-side is favor to ESD capability (It2 value) in the case of high FOD/n+ ratio as the FOD/N+ area ratio is larger than 80/100. However, as compared with the original reference DUT, the Vh value is increased about 16.37 ~ 59.87 %, which allows devices more robust in the latch-up (LU) immunity.
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