The NBTI Impact on RF Front End in Wireless Sensor Networks

In this chapter, modelling of Negative Bias Temperature Instability (NBTI), how it is incorporated with Static Random Access Memory (SRAM) and its impact on different SRAM cache configurations is presented. Investigations of how NBTI affects different power saving cache strategies employing the standard symmetric and asymmetric 6-transistor (6T) SRAM, and the isolated read-port 6T SRAM bitcells, are presented. It is observed that more than 38–66% of the recovery in stability parameters (SNM and WNM) under different power saving cache strategies have been achieved for different SRAM bitcells based cache configurations. It is also found that the low V TH transistors age faster than the high V TH transistors due to NBTI. Hence, NBTI effect is more pronounced in future technologies due to reduction in V TH with technology scaling. Also NBTI effect is more significant at higher temperature.

The wake-up process of a power-gated design may induce an excessive surge current and threaten the signal integrity. A proper wake-up sequence should be carefully designed to avoid surge current violations. On the other hand, PMOS sleep transistors may suffer from the negative-bias temperature instability (NBTI) effect which results in decreased driving current. Conventional wake-up sequence decision approaches do not consider the NBTI effect, which may result in a longer or unacceptable wake-up time after circuit aging. Therefore, in this paper, we propose a novel NBTI-aware wake-up strategy to reduce the average wake-up time within a circuit lifetime. Our strategy first finds a set of proper wake-up sequences for different aging scenarios (i.e. after a certain period of aging), and then dynamically reconfigures the wake-up sequences at runtime. The experimental results show that compared to a traditional fixed wake-up sequence approach, our strategy can reduce average wake-up time by as much as 45.04% with only 3.7% extra area overhead for the reconfiguration structure.

The tremendous scaling of the semiconductor devices is producing the high-density integrated circuits (ICs). Metal-oxide-semiconductor field-effect transistors (MOSFETs) are the basic building blocks for the ICs. The lower area requirement with increased numbers of devices on a substrate makes it an interesting field of very-large-scale integration (VLSI) design. The reliability of the logic circuits is the concern issue in modern-era electronics. Reliability affects the overall performance of the logic circuits and possibility to the failure of the semiconductor devices. Negative bias temperature instability (NBTI) degradation is the major concern in ultra-deep submicron (DSM) regime. The negative threshold voltage of PMOS device when shifted in NBTI effect causes performance degradation over the time. NBTI degradation is the aging effect for PMOS device. This chapter presents the overview of NBTI effect and its possible solution.

Negative bias temperature instability (NBTI) in PMOS transistors has become a significant reliability concern in present day digital circuit design. With continued scaling, the effect of NBTI has rapidly grown in prominence, forcing designers to resort to a pessimistic design style using guard-banding. Since NBTI is strongly dependent on the time for which the PMOS device is stressed, different gates in a combinational circuit experience varying extents of delay degradation. This has necessitated a mechanism of quantizing the gate-delay degradation, to pave the way for improved design strategies. Our work addresses this issue by providing a procedure for determining the amount of delay degradation of a circuit due to NBTI. An analytical model for NBTI is derived using the framework of the reaction-diffusion model, and a mathematical proof for the widely observed phenomenon of frequency independence is provided. Simulations on ISCAS benchmarks under a 70nm technology show that NBTI causes a delay degradation of about 8% in combinational logic based circuits after 10 years (ap 3 times 108s)

In this work, we have correlated the degradation by Negative Bias Temperature Instability (NBTI) in MOS Junctionless Nanowire Transistors (JNTs) to the electric field inside the devices. We have measured samples with doping concentrations of 1×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> , biased at two different drain voltages, with several channel lengths (L) and widths (W). To extend the analysis, aiming at the understanding the physical behavior of the devices, we performed simulations of NBTI considering devices with similar characteristics. As a result, a higher degradation by the NBTI effect was obtained for the JNTs with lower doping concentration and shorter channel. The behavior of the NBTI has been correlated to the electric field of the devices and it is shown that the electric field becomes important mainly in accumulation regime.

Negative Bias Temperature Instability (NBTI) is considered one of the major reliability concerns of transistors in current and upcoming technology nodes and a main cause of their diminished lifetime. We propose a new means to mitigate the effects of NBTI on SRAM-based register files, which are particularly vulnerable due to their small structure size and are under continuous voltage stress for prolonged intervals. The conducted results from our technology simulator demonstrate the severity of NBTI effects on the SRAM cells - especially when process variation is taken into account. Based on the presented analysis, we show that NBTI stress in different registers needs to be tackled using different strategies corresponding to their access patterns. To this end, we propose to selectively increase the resilience of individual registers against NBTI. Our technique balances the gate voltage stress of the two PMOS transistors of an SRAM cell such that both are under stress for approximately the same amount of time during operation - thereby minimizing the deleterious effects of NBTI. We present mitigation implementations in both hardware and in software along with the incurred overhead. Through a wide range of applications we can show that our technique reduces the NBTI-induced reliability degradation by 35% on average. This is 22% better than current State-of-the-Art.

A new on-line methodology is used to characterize the negative bias temperature instability (NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by ID−VD characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on-the-fly method. It is found that both reaction–diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90°C and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction–diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction–diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.

Hardware trojans in 3-D ICs due to NBTI effects and countermeasure

The effect of negative bias temperature instability (NBTI) on a single event transient (SET) has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that NBTI can result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-input inverter; but NBTI can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOS in the low-input inverter. Based on this study, for the first time we propose that the impact of NBTI on a SET produced by the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern, and the radiation hardened design must consider the impact of NBTI on a SET.

Negative Bias Temperature Instability (NBTI) has been regarded as most important source of reliability of CMOS devices, and specifically pMOS transistors.In this work we focus on the NBTI-induced degradation of sleep transistor cells More in details we present a practical SPICE-based analysis framework for evaluating delay degradation of power-gated circuits due to NBTI-induced current capability reducing of pMOS sleep transistor. We also describe three NBTI-tolerant pMOS sleep transistor cell design approaches, in which the Vi>th increase due to NBTI is compensated through (i) sleep-transistor over-sizing, (ii) forward-body-biasing, (iii) equivalent 0-probability reduction of the sleep-transistor driving signal.Characterization results on a commercial 45nm CMOS technology define fundamental guide-lines to be used during NBTI-aware sleep-transistor design, while experiments on an industrial benchmark highlight the importance of considering NBTI effect on pMOS sleep transistor design, emphasizing the effectiveness of the proposed design methodologies: more than 85% of time-life extension.

In this paper, we have modeled the results of negative bias temperature instability (NBTI) degradation obtained by using charge pumping and linear drain current techniques in the same time measurement setup. The proposed model is based on Hydrogen molecule (H2) cracking at trapped hole center (E' center) to explain the decrease of oxide trapped charge at long NBTI stress time (t > 1000s). In fact, according to experimental data, which are obtained in the framework of the above cited setup, NBTI induces oxide trap generation at earlier stress time followed later by a decrease (annealing) at long stress time. This behavior looks like annealing in radiation effect on gate oxide in MOSFET, which is explained by H2 cracking model. Based on this similarity, we extended this model to NBTI effect. The extended model presents a perfect correlation with the experimental data.

Power-gating (PG) techniques have been widely used in modern digital ICs to reduce their standby leakage power during idle periods. Meanwhile, virtual supply voltage (VVDD) of a power-gated IC is a function of strength of a PG device and total current flowing through it. Thus, the VVDD level becomes susceptible to 1) negative bias temperature instability (NBTI) degradation that weakens the PG device over time and 2) temporal temperature variation that affects active leakage current (thus total current) of the IC. To account for the NBTI degradation, the PG device must be upsized such that it guarantees a minimum VVDD level that prevents any timing failure over chip lifetime. Moreover, the PG device is also sized for the worst-case voltage drop partly resulted by a large amount of active leakage current at high temperature. However, increasing the size of the PG device to consider both effects leads to higher VVDD (thus active leakage power) than necessary at low temperature and/or in early chip lifetime. To minimize active leakage power increase due to these effects, we propose two techniques that adjust strength of a PG device based on its usage and IC's temperature at runtime. Both techniques are applied to an experimental setup modeling total current consumption of an IC in 32nm technology and their efficacy is demonstrated in the presence of within-die spatial process and temperature variations. On average of 100 die samples, they can reduce active leakage power by up to 10% in early chip lifetime.

A header-based power gating structure inserts PMOS as sleep transistors between the power rail and the circuit. Since PMOS sleep transistors in the functional mode are turned-on continuously, Negative Bias Temperature Instability (NBTI) influences the lifetime reliability of PMOS sleep transistors seriously. To tolerate NBTI effect, sizes of PMOS sleep transistors are normally over-sized. In this paper, we propose a novel NBTI-aware power gating architecture to extend the lifetime of PMOS sleep transistors. In our structure, sleep transistors are switched on/off periodically so that overall turned-on times of sleep transistors are reduced and sleep transistors are less influenced by NBTI effect. The experimental results show that our approach can achieve better lifetime extensions of PMOS sleep transistors than previous works and few area overheads.

Circuit reliability is affected by various fabrication-time and run-time effects. Fabrication-induced process variation has significant impact on circuit performance and reliability. Various aging effects, such as negative bias temperature instability, cause continuous performance and reliability degradation during circuit run-time usage. In this work, we present a statistical analysis framework that characterizes the lifetime reliability of nanometer-scale integrated circuits by jointly considering the impact of fabrication-induced process variation and run-time aging effects. More specifically, our work focuses on characterizing circuit threshold voltage lifetime variation and its impact on circuit timing due to process variation and the negative bias temperature instability effect, a primary aging effect in nanometer-scale integrated circuits. The proposed work is capable of characterizing the overall circuit lifetime reliability, as well as efficiently quantifying the vulnerabilities of individual circuit elements. This analysis framework has been carefully validated and integrated into an iterative design flow for circuit lifetime reliability analysis and optimization.

The emergence of Negative Bias Temperature Instability (NBTI) as the most relevant source of reliability in sub-90nm technologies has led to a new facet of the traditional trade-off between power and reliability. NBTI effects in fact manifest themselves as an increase of the propagation delay of the devices over time, which adds up to the delay penalty incurred by most low-power design solutions. This implies that, given a desired lifetime of a circuit (i.e., a given performance target at some point in time), a power-managed component will fail earlier than a nonpower-managed one. In this work, we show how it is possible to partially overcome this conflict, by leveraging the benefits in terms of aging provided by power-gating (i.e., by using switches that disconnect a logic block from the ground). Thanks to some electrical properties, it is possible to nullify aging effects during standby periods. Based on this important property, we propose a methodology for a NBTI-aware power gating that allows synthesizing low-leakage circuits with maximum lifetime.