Abstract In contrast to multi‐element ferroelectrics with intricate atomic configurations, single‐element ferroelectrics are distinguished by their structural simplicity and low‐dimensional nature. In addition, they have been experimentally verified to display robust ferroelectricity at room temperature. These materials are regarded as promising candidates for next‐generation flexible optoelectronic devices because of their high electrical conductivity and inherent compatibility with integrated circuits, this review systematically elucidates the underlying mechanisms governing the emergence of ferroelectricity in single‐element systems and comprehensively surveys the state‐of‐the‐art fabrication techniques. The fundamental physical properties of several prominent single‐element ferroelectrics including tellurium (Te), bismuth (Bi), and black phosphorus (BP) are discussed, highlighting their applications in memristors and optoelectronic devices. Finally, the current research challenges are addressed and future trends in material development, fabrication techniques, and potential applications are presented. The objective of this review is to provide a comprehensive understanding of single‐element ferroelectrics, offering valuable insights into their potential for broader applications. image

Abstract Molybdenum disulfide (MoS 2 ) is regarded as a promising next‐generation semiconductor material for high‐end microelectronic chips due to its excellent properties. However, due to the atomic thickness of two‐dimensional materials (2DMs), the interactions between these materials and their supporting substrates cannot be ignored, which affects the intrinsic properties of 2DMs. In this work, we investigated the influence of the substrate on the performance of MoS 2 devices. As compared to supported MoS 2 field‐effect transistors (FETs), the suspended MoS 2 FET exhibits more intrinsic properties of a threshold voltage ( V th ) shift toward 0 V and the current on/off ratio increases by 3 orders of magnitude. Moreover, by varying the trench/channel ratio in the MoS 2 FETs, we can effectively modulate the electrical performance of MoS 2 . An increase in the trench/channel ratio results in a shift of the V th from −40 to −5 V, approaching the ideal value. Concurrently, the subthreshold swing is reduced by approximately an order of magnitude to ~200 mV dec –1 (from ~3600 mV/dec), and the mobility is enhanced from ~1 to 100 cm 2 V −1 s −1 . To mitigate the effects of contact resistance and other extrinsic factors, we fabricated a suspended Hall‐bar MoS 2 device, achieving a mobility of 96.8 cm 2 V −1 s −1 , more than double the 37.0 cm 2 V −1 s −1 measured in a supported device. This work demonstrates a practical approach for enhancing the properties of 2D semiconductor devices, facilitating the development of high‐performance electronics. image

Abstract Metal–organic framework (MOF) glasses feature several unique dynamic and thermodynamic properties that differentiate them from their crystalline counterparts. However, the formation of MOF glasses usually requires the melt‐quenching of molten MOFs from relatively high temperatures. In practice, this approach is quite limited because most MOFs decompose below their melting points. Herein, we demonstrate a direct crystal‐to‐glass transition in HKUST‐1 MOF that has been achieved at room temperature and a relatively low pressure of <1.0 GPa. The dramatic fall in the required pressure is shown to arise from the aggregation of coordinated polar water molecules to form water clusters that exhibit a pulling effect on the Cu–O (ligand) bonds. Meanwhile, the departed fragment gets flipped unfavorably to prevent further regeneration of the bond. Accordingly, a grain boundary‐free continuous porous framework in the glassy state is successfully formed and can be fabricated into membranes. Given their unique microporosity and grain boundary‐free characteristics, such MOF glass membranes present new opportunities for chemical separation (both gases and liquids), electrochemistry, and catalysts, promising a new platform for MOF glasses. image

Abstract Flexible ionic pressure sensors (FIPS) have emerged as promising candidates for bridging the gap between electronics and biologically compatible interfaces. Unlike previous reviews, which focused primarily on materials or devices, this review presents a classification of FIPS based on mechanisms into two distinct categories: the migration‐electronic type and the emerging iontronic type. Eight representative sensing mechanisms are systematically analyzed, including ionic piezoresistive, capacitive, piezoelectric and triboelectric effects (migration‐electronic), as well as ionic diode, potentiometric transduction, nanofluidic and coupled nanofluidic–potentiometric transduction mechanisms (emerging iontronic). The basic force‐electric response principles of each type of sensor have been described, combining theoretical derivation formulas followed by a comparative analysis of advantages, disadvantages, and key performance indicators, which have both comprehensiveness and originality. Furthermore, we highlight advanced engineering approaches integrating ionic transport materials, flexible substrates, and novel electrodes to enhance sensitivity, stability, and multi‐modal responsiveness. Finally, we outline current challenges and future prospects of wearable electronics, healthcare monitoring, and intelligent robotics. By mapping the evolution of sensing mechanisms and their associated architectures, this review provides a comprehensive and forward‐looking perspective on the development of next‐generation ionic sensing systems. image

In 2 Se 3 ‐based ferroelectric artificial neurons with a multi‐terminal electrode architecture have been developed to directly encode and process spatiotemporal signals at the device level. The resistive response of the In 2 Se 3 ferroelectric memristor is harnessed for spatiotemporal‐specific neuronal behavior by engineering inherent in‐plane ferroelectricity and exploiting the broad regulation capability of a coplanar multi‐electrode configuration, enabling adaptable on‐device information processing and culminating in a speech recognition proof‐of‐concept with accuracy approaching 100%. These results demonstrate the device's promise as a compact, energy‐efficient building block for future on‐chip neuromorphic studies. image

Abstract Layered vanadium‐based oxides have emerged as promising cathode materials for aqueous zinc‐ion batteries (AZIBs) owing to their high theoretical capacity, multivalent vanadium species, and low cost. However, their practical development has been hindered by limitations such as narrow interlayer spacing and structural instability. To address these challenges, we successfully generated oxygen vacancies by a one‐step hydrothermal method, and simultaneously inserted benzyltrimethylammonium organic cations (TMBA + ) into the interlayers of V 2 O 5 to obtain a VOH‐TMBA + composite electrode material, realizing the dual‐strategy modification of V 2 O 5 . In the resulting VOH‐TMBA + , oxygen vacancies and TMBA + synergistically expand the interlayer spacing from 6.84 to 13.8 Å, stabilize the layered framework, and modulate the local atomic coordination and electronic structure. This “structural‐electronic” dual regulation endows VOH‐TMBA + with a high specific capacity of 417.2 mAh g −1 at 0.2 A g −1 and exceptional cycling stability (90.7% capacity retention after 7000 cycles at 10.0 A g −1 ). In‐situ XRD/Raman and ex‐situ XPS/SEM characterizations clarify that the VOH‐TMBA + electrode is an energy storage mechanism based on H + /Zn 2+ co‐insertion/extraction. Furthermore, density functional theory calculations demonstrated that the conductivity of VOH‐TMBA + is further enhanced, while the reduction of electrostatic interactions facilitates the transfer of Zn 2+ . This work provides a generalizable strategy for engineering layered metal oxides through collaborative structural and electronic modulation, offering perspectives for designing high‐performance cathode materials in AZIBs. image

Additive manufacturing combined with organic‐inorganic photovoltaic materials for application in solar tracking projects. image