Characteristics of Wide-Bandgap AlN/Al2O3 Bilayer Passivation on Different Substrates by Batch ALD on 200 Mm Platform
In this paper we have investigated the characteristics of a wide-bandgap materials bilayer by aluminum nitride (AlN) and aluminum oxide (AlO) on different substrates of GaN and Si on 200 mm platform by batch atomic layer deposition (ALD) of 100+ wafers. Among III-Nitride wide-bandgap semiconductors, AlN is proven to be a suitable candidate for passivation on GaN-based devices since it has excellent miscibility with similar III-V semiconductor like AlGaN. Additionally, lower lattice mismatch of these two wurtzite structures offers the adjustable bandgap and piezoelectricity which can eventually enhance the 2DEG channel carrier concentration in high electron mobility transistors (HEMT). Beside that the non-centrosymmetricity of the AlN wurtzite unit cell causes intrinsic polarization, making it a good choice for piezoelectric sensors. ALD offers an attractive advantage for depositing AlN at lower temperatures than conventional MOCVD or MBE and therefore, eliminates the problem associated with thermal expansion coefficient mismatch between film and substrate. Moreover, ALD also open the opportunity to deposit varying crystallinity of AlN on patterned substrate for barrier layer as well as passivation layer for power HEMT devices. However, AlN has a significant problem that it forms passive oxide layer at the surface when exposed to ambient air. It has been demonstrated that the small amount of oxygen has significantly affects the electrical and optical properties of AlN. Although, this effect can be exploited to desirably oxides by depositing a thin layer of oxides on top at the clean deposition environment which provide the exact chemical environment and lattice distribution of oxygen atoms. Thereby, AlN has been deposited at 350°C by Tokyo Electron (TEL) ALD on GaN heterostructure (here it is AlGaN/GaN) followed by low temperature Al2O3 cap layer at 300°C, as shown in Fig 1(a). In-depth X-ray photoelectron spectroscopy (XPS), cross-sectional scanning transmission electron microscopy (STEM) image along with elemental composition by electron energy loss spectroscopy (EELS) has been investigated to understand the miscibility of AlN and AlO at the heterointerface. It has been observed that aluminum oxynitride (AlON) formed at the heterointerface and clearly identifiable in high resolution cross-sectional STEM image in Fig 1(b). Oxygen diffusion from top AlO to the AlN considered to be the main reasons behind this chemical intermixing. With each layer thickness of 10 nm demonstrated around 25 – 30 Å of AlON on Si substrate, as shown in Fig 1(c) of EELS. Both the XPS depth analysis and EELS results show the thickness of the AlON is mainly depends on the thickness of AlO on Si substrate irrespective of AlN thickness variations, as shown in Fig 1(d) of XPS survey. Another noteworthy finding of this work is that the thickness of AlON significantly influenced by the material properties of the substrate surface. On GaN substrate AlON thickness is different than Si. We also observed that thickness is subject to the pretreatment as well as deposition conditions of AlN. The pretreatment of GaN substrate surface has great influence on the crystallinity of the AlN layer and that has substantial role on the miscibility of AlN/AlO. Near single crystalline AlN has been seen to be less susceptible to the chemical intermixing by oxygen diffusion than the amorphous one which may be because of bigger grain boundaries of the later crystal. In-depth XPS depth analysis of Al2p, N1s, O1s, as shown in Fig 1(e) reveals the nature of chemical compositions of the elements and their bonding inside the entire ALD film thickness. The area under the curve of Al2p, N1s and O1s have been considered to estimate how oxygen atoms substitute nitrogen atoms, creating a cation vacancy in the process and bonds in the AlN wurtzite structure. As an application point of view, AlON possess high-k and exhibits low leakage current, high breakdown voltage and stable threshold voltage while used as a gate dielectric. Despite low temperature of deposition, no significant carbon incorporation has been observed from the TMA precursors. The TEL batch ALD at 200 mm platform exhibits excellent thickness uniformity of only 0.33% standard deviation (STDV) in wafer-within-wafer with 49 measurement points and 0.56% STDV of wafer-to-wafer (wtow) along the 100+ wafer boat. Figure 1
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