Michigan Psychoanalytic Institute

IFETC is a recently launched conference sponsored by the IEEE Electron Devices Society (EDS) to provide a unique forum for discussions on broad range of flexible/printable electronics device/manufacturing-related topics including sensors, displays, and in general large area flexible electronics systems. Looking back, the IFETC finds its origins in the

Journal Article A Spiritual Commonwealth: Anglican Ecclesiastical Polity in Western Nigeria (1841–71) Get access Adrian M Deese Adrian M Deese Email: adeese@umich.edu https://orcid.org/0000-0002-1991-2822 Search for other works by this author on: Oxford Academic Google Scholar Journal of Church and State, Volume 65, Issue 3, Summer 2023, Pages 318–330, https://doi.org/10.1093/jcs/csad045 Published: 04 August 2023

This article presents a brief overview of the origins and growth of the Electron Devices Society (EDS) of the Institute of Electrical and Electronics Engineers (IEEE) over the last seven decades. It is found that the origins of EDS lie on 5 March 1952 as the Institute of Radio Engineers (IRE) Professional Group on Electron Devices which became EDS on 17 February 1976. The article also presents the growth of diverse top-tiered professional journals as well as sponsored meetings and conferences on topics of growing interest to electron devices community.

Given that disparate mind/body views have interfered with interdisciplinary research in psychoanalysis and neuroscience, the mind/body problem itself is explored here. Adding a philosophy of mind framework, problems for both dualists and physicalists are presented, along with essential concepts including: independent mental causation, emergence, and multiple realization. To address some of these issues in a new light, this article advances an original mind/body account—Diachronic Conjunctive Token Physicalism (DiCoToP). Next, puzzles DiCoTop reveals, psychoanalytic problems it solves, and some empirical evidence accrued for views consistent with DiCoToP are presented. In closing, this piece challenges/appeals for neuroscience research to gain evidence for (or against) the DiCoToP view.

This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure ${p}$ -channel tunnel field-effect transistors ( ${p}$ TFETs) with Ge (Germanium) channel and different compound semiconductor source. In order to study the figure-of-merits (FOMs) of analog and RF performances, various Ge-channel ${p}$ TFETs are designed with Ge, GaAsP, SiGe, and InAlAs sources. The numerical simulation data show an improvement in the FOMs of analog performance such as drain current ( $I_{ds}$ ), transconductance ( $g_{m}$ ), transconductance-generation-factor ( $g_{m}$ /I $_{ds}$ ), and intrinsic gain ( $g_{m}$ $R_{o}$ ) of the devices with compound semiconductor source compared to Ge-source ${p}$ TFET devices. Similarly, an improvement in the RF FOMs such as gate-to-source ( $\text{C}_{gs}$ ) and gate-to-drain ( $\text{C}_{gd}$ ) capacitances, maximum frequency of oscillation ( $f_{MAX}$ ), and cutoff frequency ( $f_{T}$ ) is observed for the devices with GaAsP, SiGe, and InAlAs source compared to Ge-source ${p}$ TFETs. The simulation results also show that the common-source amplifiers, designed with Ge-heterostructure ${p}$ TFETs, exhibit a significant enhancement in gain and Gain-Bandwidth product of the circuit.

Abstract This paper reports a systematic theoretical study of Al0.23Ga0.77N/GaN/AlxGa1‐xN double‐heterojunction high electron mobility transistors (DH‐HEMTs) with a boron‐doped GaN cap layer under the gate. Boron containing GaN is a desired replacement for Schottky gate in DH‐HEMT to improve the resistivity and surface qualities of GaN cap with good structural properties, and the influence of polarization field in the GaN cap layer can be used to lift up the conduction band for normally OFF operation of the device. This study shows that the B‐doped GaN cap layer offers excellent device characteristics such as high threshold voltage VT of 1.92 V, steep subthreshold slope of ~ 72 mV/dec, high ON/OFF drain current ratio of ~ 107, extremely low subthreshold drain current Ids,LL ~ 10−9 A/mm, and low gate leakage current, Igs,LL less than 10−15 A/mm. For an Al0.07Ga0.93N back‐barrier/buffer, a high OFF‐state breakdown voltage (VBR,OFF) of 865 V is achieved at Ids = 1 mA/mm and Vgs = 0 V with substrate grounded and gate‐to‐drain distance and gate field plate length of 10 and 5 μm, respectively. The simulated high VT and VBR,OFF values are achieved due to the presence of increased back‐barrier height of the AlxGa1‐xN buffer and high Schottky barrier between the Boron‐doped GaN cap and gate metal. Finally, a DC to AC full‐bridge inverter circuit is designed to evaluate the benefit of B‐doped DH‐HEMTs based switching devices for an ultra‐low‐loss inverter circuit.

The author contends that it is possible to reconcile trauma and drive theories of psychopathology if we carefully examine the general notion of trauma and reexamine Freud’s () theory of war neurosis and of repression itself as an elementary form of traumatic neurosis. The logic of these views follows Laplanche’s reintroduction and generalization of the seduction theory in contemporary psychoanalysis.

Commentary on “Transference as a Therapeutic Instrument”: Thinking About TransferenceRobert WinerRobert WinerPsychiatrist in private practice in Bethesda, Maryland, and a faculty member, Washington Psychoanalytic Institute.Address correspondence to Robert Winer, 6912 Ayr Lane, Bethesda, MD 20817. E-mail: [email protected]Search for more papers by this authorPublished Online:February 2014https://doi.org/10.1521/psyc.2014.77.1.8PDFPDF PLUS ShareShare onFacebookTwitterLinkedInRedditEmail ToolsAdd to favoritesDownload CitationsTrack Citations About Previous article Next article FiguresReferencesRelatedDetails Volume 77Issue 1Mar 2014 Information© 2014 Guilford Publications Inc.PDF download