- Research Article
- 10.35848/1347-4065/ae549f
Polarity-dependent time-dependent dielectric breakdown in ferroelectric AlScN
- Apr 28, 2026
- Japanese Journal of Applied Physics
- Kazuki Goshima + 6 more +6
Abstract Ferroelectric AlScN is a premier candidate for next-generation non-volatile memories and in-memory computing, yet its reliability degradation mechanisms remain unclear. Here, we demonstrate a pronounced polarity dependence in the time-dependent dielectric breakdown (TDDB) statistics of AlScN capacitors and its suppression via plasma oxidation (PO). For as-deposited Al0.7Sc0.3N and Al0.8Sc0.2N, Weibull analysis reveals that the shape parameter (β) is significantly smaller under positive top-electrode bias than under negative bias, suggesting a universal, polarity-sensitive breakdown process. We propose that field-driven migration of near-surface oxygen species modulates defect-network evolution in a polarity-dependent manner. To validate this, the Al0.8Sc0.2N surface was modified by PO. Angle-resolved HAXPES confirmed enhanced near-surface oxidation, and J–V measurements showed reduced leakage current. Crucially, TDDB analysis demonstrated that PO strongly suppresses the polarity dependence of β, consistent with our proposed model. Finally, the voltage acceleration coefficient and 10-year lifetime voltage were evaluated.
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