Development of ITER Equatorial EC Launcher Components Toward the Final Design

This paper presents a structure of millimeter-wave (mmW) on-chip transmission line using redistributed thick copper wires with ground shields. All the layers from standard BEOL layers to the aluminum pad layer can be selected as the ground shield. From electromagnetic field simulations and measurements up to 80 GHz, we prove that global-copper-wire ground shields produce minimum attenuation: less than 0.5 dB/mm at 60 GHz. This stands comparison with transmission lines on SOI substrate or gold-wire transmission lines on GaAs semi-insulating substrate. An mmW silicon on-chip transmission line on a standard 40 nm CMOS process was fabricated successfully.

<p>Whole genome CNV landscape of PDX models profiled by ATAC-seq. A) ASCPs PAX139, PAX217, and PAX265. Vertical arrows highlight CDK6 amplicons and horizontal arrows highlight CDKN2A homozygous deletions. B) PDACs PAX295, PAX297, and PAX300. The X and Y axes in the CGH plots represent chromosome and log2 ratios for each genome. IGV views of ATAC-seq profiles of C) KRAS; D) MYC and ; E) CDK6 in ASCP (top rows) and PDAC (bottom rows) PDX models. F) Dose response profiles of PAX139 organoids to Palbociclib (left panel) and Abemaciclib (right panel). Organoids were seeded in 96-well plate coated with Matrigel (5,000 cells /well) in organoid media. After 2-3 days of growth, fresh organoid media and DMSO or drug (10 wells/condition) was added. Fresh media and drug was added every 2-3 days. MTT assay were done on day 7 to measure proliferation. The absorbance listed for each drug is the average of the 10 wells per condition. Each experiment was performed in triplicate.</p>

Microwave and Optical Technology LettersVolume 5, Issue 9 p. 476-476 Article Second comment on “the recurrence matrix technique for the arbitrary millimeterwave and microwave planar transmission lines” R. Pregla, R. PreglaSearch for more papers by this authorW. Pascher, W. PascherSearch for more papers by this author R. Pregla, R. PreglaSearch for more papers by this authorW. Pascher, W. PascherSearch for more papers by this author First published: August 1992 https://doi.org/10.1002/mop.4650050921AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat No abstract is available for this article. Volume5, Issue9August 1992Pages 476-476 RelatedInformation

How cell numbers are determined is not understood. Hedgehog-Gli activity is involved in precursor cell proliferation and stem cell self-renewal, and its deregulation sustains the growth of many human tumours. However, it is not known whether GLI1, the final mediator of Hh signals, controls stem cell numbers, and how its activity is restricted to curtail tumourigenesis. Here we have altered the levels of GLI1 and p53, the major tumour suppressor, in multiple systems. We show that GLI1 expression in Nestin+ neural progenitors increases precursor and clonogenic stem cell numbers in vivo and in vitro. In contrast, p53 inhibits GLI1-driven neural stem cell self-renewal, tumour growth and proliferation. Mechanistically, p53 inhibits the activity, nuclear localisation and levels of GLI1 and in turn, GLI1 represses p53, establishing an inhibitory loop. We also find that p53 regulates the phosphorylation of a novel N' truncated putative activator isoform of GLI1 in human cells. The balance of GLI1 and p53 functions, thus, determines cell numbers, and prevalence of p53 restricts GLI1-driven stem cell expansion and tumourigenesis.

This paper presents the fabrication process of a thin suspended membrane on normal low resistivity silicon (LRSi), which is then utilized to design millimeter-wave (mm-wave) transmission line and passive circuits with low loss. First, two redistribution metal layers are formed on a plain LRSi wafer with benzocyclobutene in-between. Then, the wafer is thinned down and etched from backside with a specific pattern. Based on this process, a volume is introduced underneath the front side structure and the lossy LRSi substrate is replaced by air, which is the ideal substrate with no loss. Using this method, the substrate loss that contributes the majority part of total loss in mm-wave circuits on LRSi is eliminated. As the operating frequency goes into mm-wave region, the circuit size is scaled down so that the suspended portion is so small that it will not increase the mechanical instability of the structure. Therefore, the proposed suspended membrane on LRSi technology provides an excellent platform to construct mm-wave components. A U-shaped slotline resonator formed on the first redistribution layer is proposed and its quality factors are studied in detail. A second-order bandpass filter is designed and implemented by cascading two such U-shape slotline resonators. The measured frequency responses exhibit good filtering performance, with fractional bandwidth of 13.9% at 126.8 GHz, midband insertion loss of 3.9 dB and passband return loss larger than 14.2 dB. It demonstrates that the proposed suspended membrane on LRSi technology is an excellent candidate for designing low loss mm-wave components.

Given that fifth generation (5G) networks suggest heterogeneous networks (HetNets) design and millimeter-wave (mmWave) transmission as promising technologies to achieve its vision, we consider the downlink of a multi-user multiple-input multiple-output (MU-MIMO) HetNet operating at the region of mmWave frequencies. Actually, by focusing on a realistic assessment, the proposed framework includes the effects of channel aging, residual additive transceiver hardware impairments (RATHIs), and amplified thermal noise (ATN). After providing the definition of the coverage probability for this novel synergy between HetNets and mmWave transmission with its special characteristics under realistic conditions, we proceed with its derivation. Monte Carlo simulations verify the analytical results that allow to quantify the degradation obtained in this new paradigm, and provide interesting design insights. Hence, among others, we determine the degradation of the system due to channel aging, and we demonstrate that the RATHIs play a significant role in the high signal-to-noise ratio (SNR) regime.

A digital BiCMOS cell generator that produces geometrical cell layout with electrically high performance is presented. The generator is based on a 4-row model in which p-MOSFETs and n-MOSFETs are laid on two middle rows and bipolar devices are laid on the top and bottom rows. The main operations involved in the generator include: (1) formation of MOS rows; (2) formation of bipolar device rows; (3) global routing; (4) routing over devices; and (5) channel routing. The generator handles typical constraints governing the placement and routing, such as area/shape, device matching, and routability constraints, as well as the constraints on timing delay for high speed circuits and user-specified I/O ports positions. The generator is linked to ChipGraph, an IC layout editor developed by Mentor Graphics, so that the designer can edit the resulting layout if necessary, and get the mask data in either GDS II or MCIF format for chip manufacture. The experimental results on several BiCMOS circuits are presented. >

The exhaust of power and fusion-reaction products from ITER plasma are critical physics and technology issues from performance, safety, and reliability perspectives. Because of inadequate pulse length, fluence, flux, scrape-off layer plasma temperature and density, and other parameters, the present generation of tokamaks, linear plasma devices, or energetic beam facilities are unable to perform adequate technology testing of divertor components, though they are essential contributors to many physics issues such as edge-plasma transport and disruption effects and control. This Technical Requirements Documents presents a description of the capabilities and parameters divertor test facilities should have to perform accelerated life testing on predominantly technological divertor issues such as basic divertor concepts, heat load limits, thermal fatigue, tritium inventory and erosion/redeposition. The cost effectiveness of such divertor technology testing is also discussed.

An experimental study is described in which time-averaged local heat transfer coefficients were obtained for arrays of horizontal tubes immersed in a hot fluidized bed. Bed temperatures up to 1005 K were achieved. Bed particle sizes of 2.14 mm and 3.23 mm nominal diameter were employed. An array of nine tubes arranged in three horizontal rows was used. The 50.8 mm (2 in.) diameter tubes were arranged in an equilateral triangular configuration with 15.24 cm (6 in.) spacing between centers. The center tube in each of the three rows in the array was instrumented providing data for local heat flux and surface temperature at intervals of 30 deg from the bottom to the top—a total of seven sets of values for each of the center tubes. The three sets of data are representative of the heat transfer behavior of tubes at the bottom, top, and in the interior of a typical array. Data were also obtained for a single horizontal tube to compare with the results of tube bundle performance. Superficial velocities of high-temperature air ranged from the packed-bed condition through approximately twice the minimum fluidization level. Comparisons with results for a single tube in a bubbling bed indicate only slight effects on local heat transfer resulting from the presence of adjacent tubes. Tubes in the bottom, top, and interior rows also exhibited different heat transfer performance.

We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements onvertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- andtenfold stacked quantum dot structures grown by low-pressure metal–organic vapour phaseepitaxy. The XSTM images reveal that the quantum dots are generally verticallywell aligned, and have a truncated pyramidal shape in agreement with similarstudies of InAs dots in GaAs. STM images displaying atomic resolution indicatethat the dots have a pure InAs stoichiometry, with intermixing only occurring inthe top and bottom dot rows. Further, we have investigated various anomalies(considered as defects) as observed in the quantum dot stacks. The origins of theseanomalies are discussed and compared to theoretical predictions available so far.

Dynamic control over real and reactive power flow is one of the key areas of concern for the modern grid. Traditional FACTS based devices have proven to be too costly and complex to achieve any significant market penetration. Modifying existing transmission assets to make them controllable may be a cost-effective method of increasing the grid controllability. Controllable Network Transformers (CNTs) have been shown theoretically to be an effective real and reactive power flow controller. The various options for filter design of a CNT are presented in this paper. The paper also discusses the design and testing of a medium voltage CNT prototype with an integrated hybrid active filter, rated at 200 kVA and 2.4 kV.

In this paper, a novel hollow substrate integrated waveguide (HSIW) is presented for realizing low-loss millimeter-wave (mm-wave) transmission lines embedded in multi-chip modules. A new analysis method for the HSIW is proposed by treating it as a combination of a two-dielectric loaded rectangular waveguide (RWG) and standard substrate integrated waveguide, where an effective dielectric constant, e e , is introduced. An HSIW prototype in the Ka-band is fabricated using a progressive-lamination low-temperature co-fired ceramic technique. The measured results agree well with theoretical calculations and simulations. An average of 0.009-dB/mm loss is achieved in Ka-band, which is comparable to an air-filled RWG. This shows that the technique has great potential for further development to realize highly integrated mm-wave modules.

FEM analyses and prototype tests of the UPP structure for the ECRH in ITER

We designed and fabricated a low-loss transmission line structure with through-silicon vias (TSVs) for use in the millimeter-wave region for three-dimensional packaging of radio frequency microelectromechanical system devices. High-frequency simulations were used to determine the optimum transmission line structure. A transformer was employed to compensate for the impedance mismatch between the TSVs and the coplanar waveguide. The proposed structure was fabricated using a combination of surface micromachining and the molten solder ejection method. The electrical properties of the TSVs and the transmission line were measured, and a low insertion loss of 0.7dB at 80GHz was achieved.

The design and development of novel microelectromechanical systems’ (MEMS) coplanar waveguide (CPW) transmission lines, using microshield and groove, are presented in the paper to operate between 5–60 GHz. The quasi-static capacitances of CPW are calculated using the conformal mapping technique to express the propagation properties, i.e., the characteristic impedance and effective permittivity. Simulation results have shown a considerable loss reduction to levels that compare favorably with the conventional CPW. These transmission lines can be widely used in the development of phase shifters, filters, and antennas, because of their advantages in loss reduction and improvement in the performance.