TD-3 System: Active Solid-State Devices

We propose 400-Gb/s (16 × 25 Gb/s) optical transmitter and receiver modules for on-board interconnects using polymer waveguide (PWG) arrays. Four four-channel vertical cavity surface emitting laser and PIN photodiode arrays are used in the optical transmitter and receiver modules. A 16-channel PWG array with a length of 140 mm and a pitch of 62.5 μm is used as a short-reach optical signal transmission medium in the module. The 25-Gb/s optical eye diagrams of the all output channels utilize PWG transmissions and exhibit good performance in the transmitter module, with a signal-to-noise ratio (SNR) of over 8.01, peak-to-peak time jitter below 11.70 ps, and mask margin of over 31.5%. In the best-performance channel of the receiver module, the peak-to-peak time jitter and SNR of the eye diagram are 10.34 ps and 10.76, respectively, and the receiver sensitivity is approximately −2.6-dBm under a bit error rate of 10−12. The optical transmitter and receiver modules utilizing PWG transmissions were designed and fabricated to realize 400-Gb/s on-board interconnects.

Authors propose a hardware based approach for reliable encryption in wireless network using Cellular Automata (CA). Distinct layers of encryption have been utilized in proposed model for enhancing data security. Transmitter and receiver modules are designed for performing state transition based encrypted activities. Transmitter module is required for capturing environmental turbulences (noise) from a specific geographical location and send encrypted signal to receiver module through wireless network. Receiver module analyses received signal after decryption for desired activities based on real time situations. Different hardware components are selected and compared based on market study targeting efficient construction of proposed modules. Time complexity and code break complexity are measured using different key lengths, keysets, and data sizes for proposed CA based encryption scheme achieving unique results in hardware based cryptography system. Encryption key length, index, and keyset are required for computing code break complexity in design model. Large data size is effectively managed to calculate protection ratio and reliability factor for realizing efficient protectiveness and accuracy. Comparative study between existing encryption technique and proposed CA based encryption technique is established based on time complexity and code break complexity.

Summary form only given: Microwave Schottky mixer and detector diodes have been utilized in Microwave Systems. In general, thermal compression bonded Schottky diodes exhibit superior noise figure and better mechanical and environmental reliability when compared to point-contact diodes. However, Schottky diodes have been proven less resistant to burnout in radar systems. Short, high-power RF pulses (T = 1-50 nsec) such as those occuring with T-R tubes are detrimental to the Schottky diodes. This paper describes the investigation of high burnout resistant Schottky barrier diodes for X and Ku-band frequencies. High burnout resistant Schottky barrier diodes have been developed by utilizing Platinum for the barrier on n-type epitaxial silicon. The epitaxial Silicon parameters and metalization schemes were optimized to obtain low noise figure and high burnout resistance. X-band diodes exhibit RF burnout greater than 100watts (T= 3 nsec, 103 pulses per sec) and r:burnout of 3 watts which is two to five times greater than presently manufactured Schottky diodes. The na no second pulse burnout exceeds even that of the high point-contact diodes. Similar results were noticed for Ku-band diodes. These diodes exhibit near ideal electrical characteristics and low noise figure. The processing and characteristics of such a Schottky barrier for mixer and detector applications will be discussed. Reflected RF power was monitored during the RF burnout tests and SEM pictures were taken at various stages to understand the burnout mechanism. A complete failure analysis of these devices will be presented.

This paper describes optical transmitter and receiver modules for package-to-package interconnection in broadband switching networks such as an asynchronous transfer mode switch fabric. These modules, which include the multiplexer and demultiplexer, can reduce the number of connections and the problem of skew between links. Five-channel optical transmitter and receiver modules were fabricated and demonstrated at 2.8 Gbit/s with a power dissipation of 4.5 W per channel. Moreover, temperature-insensitive optical interconnection was successfully demonstrated by driving a laser with a constant bias current over the threshold and by deducting the optical signal offset. The output power of the transmitter module was -4.2 dBm. Nonuniformity of the transmitter output powers across the range of optical channels was <2.1 dB. Receiver sensitivity for a bit error rate of 10/sup -11/ was -9.3 dBm. Nonuniformity of the receiver sensitivities was <1.5 dB. The power penalty of the receiver sensitivity due to crosstalk was 1 dB. The connection distance was >250 m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

We experimentally demonstrate the implementation of 10 Gbps high-speed mid-infrared (MIR) free-space optical (FSO) communication, by means of our developed robust high-speed MIR transmitter and receiver modules. Such modules can enable frequency down- and up-conversion between 1550 nm and 3594 nm based on difference frequency generation (DFG) in MgO-doped periodically poled LiNbO3 (MgO: PPLN). The MIR transmitter generates 5.34 dBm power at 3594 nm for input powers of 33 dBm at 1550 nm and 37 dBm at 1083 nm. The MIR receiver regenerates -24.5 dBm power at 1550 nm for input powers of -1.2 dBm at 3594 nm and 36.7 dBm at 1083 nm. The eye diagram of regenerated 1550 nm signal is clear, and both for the on-off keying (OOK) and differential phase shift keying (DPSK) modulation, the power penalties compared with back to back (BTB) signals are lower than 3.5 dB measured at bit error ratio (BER) of 1E-6. According to our analyses, the system supports variable data rate, wavelength, and modulation format. Furthermore, the optical and electrical components are well integrated and fixed in MIR transmitter and receiver modules, which exhibit long-term stability and can be applied to field experiments.

A fabrication technique is described for the formation of metal-semiconductor contacts, with minimum contamination, on a production basis. Contacts of this type have been formed by cleavage in high vacuum in a stream of metal atoms which has very limited application or by normal evaporation which produces contaminated contacts. The basic structure consists of a layer of epitaxial silicon, on a suitable substrate, on which is deposited a film of molybdenum by the hydrogen reduction of the chloride in the same chamber. The system is adaptable to multiple slice operation. Measurements of switching speed indicate that the reverse recovery times are on the order of 1 nanosecond or less. This very short recovery time is attributed to the high injection efficiency which approaches unity. The high electron injection efficiency reduces the minority carrier concentration in the depletion region thereby reducing trr. Data is presented on both forward and reverse characteristics for diodes fabricated on both epitaxial and bulk silicon with different impurity concentrations. Reverse currents on the order of 10 nanoamps at 10 volts have been observed on epitaxial silicon and forward current densities of 30,000-40,000 amperes per square centimeter, at 1 volt, have also been observed. Data is also presented to show the effect of impurity concentration on barrier height.

This paper reports on the development and experimental characterization of a high data-rate communication link at 240GHz with highly-integrated direct-conversion quadrature transmitter and receiver modules implemented in 130nm SiGe HBT technology with ft/fmax of 350/550 GHz. Both modules employ a low-cost chip-on-board packaging scheme with single-chip TX and RX front-end circuits accommodating wideband silicon lens-integrated wire ring on-chip antennas. The key highlights of the developed hardware are its high RF and IF operation bandwidths available from the printed-circuit board-level. With the preliminary wireless transmission tests, a 20Gbps and a 24Gbsp transmission speed with an EVM of 24% was demonstrated for BPSK and QPSK modulation schemes at a distance of 90cm with no channel equalization applied. For a 10Gbps BPSK, an error-free communication link could be established.

We developed transmitter and receiver modules with Ti:PPLN waveguide operated as difference frequency generator to convert a signal (lambda <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> ~ 1550 nm) to the mid infrared (lambda <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</sub> ~ 3800 nm) and back again.

In this paper, a graphene-based electromagnetic imaging system working in 140–220 GHz frequency band for nonintrusive analysis of 3D artwork is presented. A single-stage high-order frequency multiplier is used to generate the signal at the transmitter module, whereas the single-stage high-order subharmonic mixer acts as a signal detector at the receiver. Both modules exploit the nonlinear response of graphene sheets excited by an incident electromagnetic wave, to generate harmonic components and mixing products of the input signals, respectively. The transmitter and the receiver modules were implemented through an additive manufacturing process. The resulting electromagnetic imaging system prototype was applied to the analysis of ceramic vessels, showing its ability to detect enclosed objects and to obtain information in cross-sectional planes. Furthermore, the geometrical parameters and filling material characterization can be obtained by processing the frequency response of the scattered field.

This paper proposes a novel medium access control scheme for low cost, single-hop wireless networks where the source nodes have a transmitter module but no receiver module and hence they can only transmit data to a sink but cannot receive any control signals, like an ACK or NAK, from any other node. The goal of the proposed scheme is to provide QoS (in terms of packet delivery probability) to the nodes in such a network, where the existing schemes like polling or scheduled transmissions, CSMA and ARQ will be ineffective because of the unavailability of a receiver module at the nodes. The proposed scheme uses distributed control and allows the nodes to transmit each packet an optimal number of times at random instants in time within the packet generation interval. We define two optimization problems based on minimizing total network traffic and maximizing the delivery probability of the class of nodes requiring the highest QoS, respectively, and develop mathematical formulae and efficient algorithms to solve them. Numerical analysis and simulation results show that our scheme can provide high QoS to networks of different sizes.

In this paper, a passive control scheme based on the fractional-order calculus is proposed. We study the modified complex projective synchronisation between two identical fractional-order complex chaotic systems, and its application in the secure communication. The fractional-order complex chaotic Lorenz system is employed to encrypt the emitted signal. In the transmitter module, the information signal is modulated into one parameter of the Lorenz system. It is assumed that the same parameter is unknown in the receiver module. In order to synchronise two systems with different initial conditions, the controllers and an appropriate parameter update rule are designed. Theoretical analysis and numerical simulations show that this method is feasible and robust to some extent in the presence of channel noise.

Based on mastering SOPC and Quartus II, designed UART IP Core, and an integrity design proposal is given out. The proposal is embedded in FPGA chip. The transmitter module, receiver module and baud rate generator are simulated and analyses. The experiments results show that the design method is compact and practical, and the circuit is stable, reliable, and strong flexibility.

We report the growth, fabrication, and electrical properties of a fully epitaxial semimetal-semiconductor Schottky diode materials system: ErAs on InAlGaAs. The coherent, thermodynamically stable, lattice-matched interface eliminates oxide and interfacial third phases, making the Schottky barrier height and associated electrical parameters dependent on the fundamental molecular bonding (e.g., interface dipoles) rather than unintentional extrinsic effects. ErAs:InAlGaAs diodes thus have highly tunable properties; by adjusting composition, doping, and interface type, the Schottky barrier height is tunable from ∼100meVto∼620meV, short circuit responsivity is tunable from 0.5to19A∕W, differential resistance is tunable from 103to1010Ωμm2, and capacitance is tunable from 0.4to2fF∕μm2. Rectification of a rf source has been demonstrated up to 20GHz. ErAs:InAlGaAs is thus a very promising materials system for design of an upper mm-wave, zero-bias, square-law detector with a significantly reduced noise floor.

Au-Schottky diodes have been fabricated on epitaxially grown diamond films on highly p-doped substrates. The forward characteristics show a low ideality factor and low series resistance. In reverse, a steadily increasing temperature activated excess leakage current is observed. The analysis of this region has lead to a new defect model. These defects can be in part passivated by plasma pretreatment, leading to significantly lower reverse currents and to the highest ever reported on/off current ratios for epitaxial diamond diodes of up to 10/sup 9/ at high temperature. >

In the previous article about detecting train arrivals [4], we discussed the data transmission process which is the weakness of the system. This article discusses how to overcome these shortcomings. Distance detection systems need to be added to devices that are more powerful and faster in transmitting data. The prototype is built based on the development of the previous prototype. The initial product is a distance detector that has a motion sensor and a data transmission module in the form of Lora 400 MHz and a GSM module. Product development includes the addition of the NodeMCU WIFI module to existing devices. System development aims to: (1) Develop a distance detection system equipped with a WIFI module; and (2) Increase the data transmission speed of the distance detection system equipped with the WIFI NodeMCU module. The implementation method uses research and development techniques [3]. System development takes 6 months, with the stages of completion being system requirements analysis, hardware, and software design, system prototyping, and tool testing. Checklist data and delivery time are used as test data. Furthermore, the data is analyzed quantitatively to determine the achievement of results according to predetermined indicators. The device is equipped with a GPS module, a Lora-R02 receiver and transmitter module, and a Nodemcu ESP8266 module as a replacement for the 900A SIM module which transmits data faster. When the device is being tested, all the sensors of the tool work well at range of 125 meters (previously less than 100 meters). While the Lora module can react when the object has reached a distance of 300 meters. Data transmission previously using GSM modules took 10-13 seconds. After using the WIFI module, data transmission only takes 1-3 seconds.