Acoustic GHz-microscopy and its potential applications in 3D-integration technologies

In this paper, we design a new program to achieve carbon nanotubes through silicon vias (TSV) interconnects compatible with CMOS technology using an auxiliary TSV structures and laser local heating method. Auxiliary TSV structures are made by two wafers. One wafer is etched into ups and downs structures and then deposited SiN x and SiO 2 film. The other one is made into TSV structures by deep silicon etching, depositing thin film and wafer thinning and polish. Two wafers are bonded together by patterned BCB (Benzocyclobutene). For the entire device structures, we use FDTD solutions software to simulate infrared optical properties of SiN x . SiN x film layer can absorb 10.6 µm infrared laser strongly. Thermal simulation of geometrical model by COMSOL Multiphysics software shows well temperature compatibility. It turns out the program is compatible with current CMOS processes. Using a laser local heating method, we have studied the local growth of carbon nanotubes. Carbon nanotubes grown in TSVs are sparse, intertwined and have a poor morphology; the reason for this is that TSVs' geometric sizes limit gases flows. Carbon nanotubes interconnect still need further study.

This paper investigates the failure causes for slopped through silicon vias (TSV) and presents process improvement for implementing the slopped TSV for 3D wafer level packaging (WLP). IMEC is developing slopped and scaled generic approaches for 3D WLP. Previously we have reported on the integrated process flow for the slopped (TSV) and showed the feasibility of Parylene N as a dielectric material. In the TSV process discussed here, firstly 200mm device wafer is bonded facedown on a carrier using temporary glue layer and thinned by grinding. TSV's are realized by dry etching from the wafer backside, followed by dielectric deposition and patterning. Dielectric patterning is done at the bottom of the via on 100 microns thin silicon device wafer supported by the carrier. Finally, conformal plating is done inside the via to obtain the interconnections.This paper discusses the yield killer or failure causes in the slopped TSV process. There can be many parameter including silicon etch uniformity, dielectric etching at the bottom of the via and resist residue inside the via that can reduce the yield of the process. We report that one of the main factors contributing to the yield loss is silicon dry etching effects including non-uniformity and notching. Using standard Bosch etching process, notching at the interface between landing oxide and silicon has been observed. The notching cause a discontinuity at the bottom of the via resulting in no plating at the bottom interface.In this paper we report on a new via shape that is a combination of slopped and straight etching sequence to overcome the notching problem. Different parameters including influence of grinding marks, mask opening, wafer thickness variation, etching rate and etching profile across the wafer were investigated. The optimized design rules for mask opening and effect of individual etching parameters on the etching profile will be presented. In etching, firstly a sloped via with slope of 60 degrees is optimized with changing different etching parameters including different gasses and pressure. Slope via facilitates in subsequent dielectric deposition and sputtering processes. Secondly, a straight wall etching process based on Bosch process and soft landing step with longer passivation steps were investigated to obtain the notch free etching profile. The optimized etching process is notch free, very repeatable and total variation across different wafers is less then 2 percent for 100 micron target opening.This paper reports the failure analysis of TSV and discuses the processes improvement to obtain higher yielding vias. Different parameters that reduced the yield are discussed with main focus on notching effects during silicon etching. An improved and characterized, notch free uniform silicon etching across the wafer process based on two step etching is presented. An integration flow implementing the above optimized parameters with electrical yield will be detailed in the paper.

The technology of 3D IC integration is highly probable to achieve the demand for high performance, better reliability, miniaturization and lower-priced portable electronic products. Since the through silicon via (TSV) is the heart in 3D IC integration architectures, the reliability issues of TSV interconnects should be extremely concerned. Due to the large thermal expansion mismatch among the Cu, Si, and SiO 2 , the induced thermal stresses and strains can occur and become the driving forces for failures in TSV interconnects. Hence, the stress analyses and failure mode investigation for TSVs are in urgent need. Among the typical failures, the mostly common failure type is delamination, which will be caused when lower energy release rate (ERR) or higher critical stresses at interfaces are presented. In this study, the finite element modeling (FEM) for a symmetrical single in-line copper filled TSV with redistribution layer is illustrated. Two kinds of horizontal cracks that embedded in the interface of SiO 2 passivation and Cu seed layer (Cu pad delamination cases) are introduced to realize the interfacial ERR, where is also the critical stress area that observed from finite element analysis. The significance of design parameters such as crack length, TSV diameter, TSV pitch, depth of TSV, SiO 2 thickness and Cu seed layer thickness are also brought up. The methodology of design of experiments (DoE) has been adopted to capture the most important mechanical parameters of the TSV to comprehend the corresponding ERR. It is believed that these results would be helpful to avoid delamination of TSV interconnects in 3D IC integration.

In this paper a low temperature ‘via-last’ technology will be presented. This technology has been especially developed for CMOS image sensors wafer level packaging. In the first part of this paper, the design of the TSV will be presented and a first approach of a design rule definition for TSV will be introduced. The alignment strategy will be also presented, and specific patterns to succeed front side to back side alignment will be described. In a second part the steps of the Through Silicon Vias (TSV) technology will be presented: glass wafer carrier bonding onto the silicon substrate, silicon thinning and backside technology including specific steps like double side lithography, silicon deep etching, silicon side wall insulation, vias metallization and final bumping. A special focus will be done on this paper on the TSV metallization step and especially on the chemical seed layer etching. A study has been achieved in this project in order to optimize this part of the process and the results will be shown. Then, morphological and electrical characterizations of the via-last technology will be presented and discussed. Finally, a picture obtained with the TSV CMOS Image Sensor (TSV CIS) will be shown.

Three-dimensional packaging (3DP) is an emerging trend in microelectronics development toward system in package (SiP). 3D flip chip stacking structures with through silicon vias (TSVs) have very good potential for the implementation of 3D packaging. Prototype design and fabrication of multi-stacked flip chip three dimensional packaging (3DP) with TSVs formed by deep reactive ions etching (DRIE) and TSVs plugging by copper plating for interconnection are studied and discussed in details. The three middle chips and top chip are stacked by a flip chip bonder and the solder balls are reflowed to form the 3DP structure. Lead-free soldering and wafer thinning are also implemented in this prototype. In addition to the conceptual design, all wafer level fabrication processes are described and the subsequent die stacking assembly is also presented in this paper.

Through silicon vias (TSVs) provide advanced vertical interconnections solutions for system-in-package (SiP) (such as chip to chip, chip to wafer, and wafer to wafer stacking), wafer-level packaging, interposer packaging. At present the shortest electrical path (vertical electrical feed through) between two sides of a silicon chip is one of the important applications. In order to achieve high density and high performance package, TSVs technology has been developed. And for three-dimensional (3D) MEMS (Microelectromechanical System) packaging, TSVs are the most important enabling technology. In this paper, some advantages of TSVs technology are described, and process flow of TSVs module is introduced firstly. Subsequently, a novel electricity test method of Non-Ideal Planes for TSVs is introduced. Finally, many critical issues and challenges of TSVs are reviewed.

Void growth in through silicon vias (TSVs) has been imaged by X-ray microscope without physical cross sectioning. In additional, a finite element stress modeling is used to study the stress-assisted void growth. Fabrication of through silicon vias (TSVs) is challenging and often hampered by the presence of seam-line or voids inside the TSVs as pre-existing void. Annealing these TSVs induces large hydrostatic stress gradient distribute around the pre-existing void. This hydrostatic stress gradient is the driving forces for the vacancies to diffuse to the pre-existing void region and causing void growth. Because physical cross sectioning of TSVs is not required for the 8KeV lab-based X-ray microscope, the same TSVs can be imaged before and after annealing. Void growth is observed at the pre-existing void location after annealing in TSVs with 5μm in diameter and 26 μm of depth. Stresses in a copper-filled TSV with a pre-existing void were simulated by finite element methods and will be presented. The maximum of hydrostatic stress gradient is found to be around the void when cool down from annealing temperature to room temperature. The comparison between simulated results and experimental data show that void growth in TSV is stress-assisted, where vacancies diffuse and coalesce at the void as a result of the hydrostatic stress gradient.

In this paper, we show the advantages of 3-D stacked through silicon via (TSV) in high chip density package in aspect of wideband and low power distribution network (PDN) impedance. We selected large size (80 μm) and large pitch (200 μm) TSV with thick silicon substrate (Si, 80 μm, aspect ratio =1) for on-chip PDN, and compared two total PDN impedances of a PDN with TSVs and a PDN with wire-bondings depending on number of stacked chips from 2 to 10 on a single package. PDN impedance with TSVs includes total capacitance and inductance of TSV and 20 mm × 20 mm package substrate. PDN impedance with wire-bondings shows total capacitance and inductance of wire-bondings and same size package substrate. PDN impedance with TSVs has lower levels with wide bandwidth from 10 MHz to 5 GHz except serial resonance frequency range of the package substrate around 350 MHz. In low frequency range from 10 MHz to 350 MHz, total capacitance of a PDN with TSVs is larger than that of a PDN with wire-bonding because of 0.1 μm thickness silicon oxide (Si02) for blocking DC leakage from TSV to Si substrate. Over 350 MHz, total inductance of a PDN with TSVs is smaller than that of a PDN with wire-bonding because TSV is the smallest electrical path from top surface of stacked chips to the package PDN. The effectiveness of lowering total PDN impedance is better when the number of stacked chips is growing because total length of TSVs is linearly increased with factor 1 while total length of wire-bonding is done with factor √2.

Through silicon vias (TSVs) play an important role as the vertical electrical connections in 3-D stacked integrated circuits. However, the closely clustered TSVs suffer from the crosstalk noise between the neighboring TSVs, and result in the extra delay and the deterioration of signal integrity. For a 3 × 3 TSV array, the severity of crosstalk noise in the center victim TSV is classified into 11 levels, which is defined as 0C to 10C from low noise to high noise, depending on the combinations of the digital patterns applied to the TSV array. An enhanced code based on the Fibonacci number system (FNS) to suppress the crosstalk noise below 6C level is proposed, in which both the redundancy of numbers and the nonuniqueness of Fibonacci-based binary codeword are utilized to search the proper codeword. Experimental results show that the proposed technique decreases about 22% latency of TSVs comparing with the worst crosstalk cases. This technique is applicable in the large-scale TSV array for it has a quasi-linear hardware overhead, and its system overhead is less than that of the 3-D 4-LAT counterpart if the data width is greater than 18, and it has good usability for it consumes less power per TSV and achieves lower bit error rate at the interested frequency range comparing with that of the original FNS coding technique.

Through silicon vias (TSV) are an enabler for high performance Three Dimensional Integrated Circiuts (3DIC). TSVs are used for signal, power and ground lines in 3DICs. TSVs used to carry signals can induce noise in nearby circuitry and in those instances shielding is required. Traditional shielding is composed of guard rings surrounding the signal TSVs or if the signal is differential in nature, a careful arrangement of TSVs carrying the differential signals can aid in noise reduction. In the guard ring scenario, the guard rings are typically tied to ground. This paper proposes a technique for energy scavenging utilizing the guard rings for shielding TSVs. Energy absorbed by the guard rings can be stored for later use by the system. This paper examines the feasibility of configuring the guard rings to charge a decoupling capacitor instead of shunting energy to ground. It is shown that the decoupling capacitor can be charged using this method and that under certain conditions, the overall power of the system can be reduced by 4% to 15%

Three-dimensional integration is considered as one of the effective methods that continue the rapid development of microelectronic technology for More than Moore. Through Silicon Via (TSV), which is used to connect signals on different layers, is the critical factor of three-dimensional integration technology. Because of its lower thermal resistance, TSV is also beneficial for heat dissipation. In order to verify the feasibility of using TSV as an internal nested heat dissipation structure in three-dimensional systems, an analytical model of internal heat transfer of a power chip with TSV was proposed. Based on the proposed theoretical model, the thermal resistance of the vertical silicon path and the TSV path is 32.4K/W and 5.34K/W, respectively. It is proved to be feasible that using TSV for internal heat dissipation of a power chip. The simulated results of the thermal resistance on the two paths are nearly consistent with the theoretical ones. So, the analytical model of the heat transfer is correct and validated.

Grain characteristics of copper filler have an important influence on physical properties of through silicon vias (TSVs) in three-dimensional (3D) packaging. Due to the mismatch of coefficients of thermal expansion (CTE) between the copper and silicon, there exist obvious thermal stresses when the TSV structure is bearing thermal load. However, the elastic response characteristics of copper can be affected distinctly by the size, shape and orientation of copper grains in TSVs. These effects can not be ignored, especially for 3D ICs undergoing continuous miniaturization and increasing integration. In this study, the grain growth and evolution of a typical copper filler in the TSV structure is dynamically simulated and investigated by using Monte Carlo method (MCM), then the thermo-mechanical behavior of TSVs with considering the grain characteristics of copper filler is studied with combined MCM and finite element method (FEM), i.e., MC-FE method. Besides, the effects of grain evolution on the protrusion of copper filler in the TSV is also investigated. Simulation results are presented for providing more quantitative description and comprehensive understanding of the influences of microstructure evolution of copper filler on the thermo-mechanical behavior of Cu-filled TSVs.

Convergence and miniaturization of consumer electronic products such as cameras, phones, etc. has been driven by enhanced performance and reduced microelectronics size. For past few decades Moore’s law has been driving the microelectronics industry to achieve high performance with small form-factors at a reasonable cost. While the continued miniaturization of the transistors has resulted in unparalleled growth of the electronics industry, further performance increment via size scaling could be cost-ineffective and difficult to manufacture. To satisfy the current/future integrated Circuit (IC) package requirements, vertical integration of chips holds the key, i.e., 3-D packaging. Chip-stacking (3-D) is emerging as a powerful technology to reduce package footprint, decrease interconnection power, higher frequencies, and provide efficient integration of heterogeneous devices. It allows further reduction in the form factor of current systems and eases the interconnect performance limitation since the components are integrated on top of each other instead of side-by-side, resulting in shorter interconnect lengths. Due to high package density and chip-stacking on top of each other, heat dissipation from the stacked chips becomes a concern. To overcome these thermal challenges and provide shorter/faster inter-chip electrical connection, Through Silicon Via (TSV) technology is being implemented in 3-D ICs. TSVs allow 3-D chips to be interconnected directly and provide high speed signal propagation. TSVs provide inter-chip heat/current path but the current flowing through the TSVs results in localized heat generation (Joule Heating) within the silicon, which could be detrimental to the overall performance of the system. In this paper, the effect of Joule heating on the device performance measured by trans-conductance, electron mobility (e− mobility), and channel thermal noise is analyzed. Thinned (100 μm) chips with a uniform power map and evenly distributed TSVs are analyzed in this work. Thermal distribution in the package is studied for different TSV currents including a base-line case of no-current (thermal TSV only) and the junction temperature is determined for each case. The response from the thermal analysis is correlated to the device performance through existing relations. Results indicate that joule heating has a significant effect on the thermal response of the 3D IC and subsequently proves to be detrimental to the chip performance. An understanding of the electrical performance dependence on TSV joule heating is developed through this work.

Through Silicon vias (TSVs) are a key breakthrough in 3D technology to shorten global interconnects and enable the heterogeneous integration. However, TSVs also introduce an important source of noise coupling arising from electrical coupling between TSVs and the active devices. This paper investigates the TSV noise coupling to active devices including both FinFETs and planar transistors based on two-port S-parameter measurements up to 40 GHz. The measurements clearly show that nFinFETs have better noise coupling immunity than planar nNMOSFETs. The dominant coupling mechanisms were also identified for both types of active devices. Moreover, calibrated TCAD models were developed. We show that via-last TSV architectures with thick liners (“donut TSVs”) and scaled TSV diameters reduce the noise coupling to active devices. Finally, both coupling and stress induced saturation current variations as a function of TSV to active devices distance were investigated. This allows us to propose a novel model for the TSV Keep Out Zone (KOZ) including electromagnetic coupling effects.

The fabrication of through-silicon vias (TSVs) is a major component in the development of three-dimensional (3D) integration technology and advanced 3D packaging approaches. The large diameter and length of TSVs, as compared to traditional interconnects, create some unique process challenges. Via plating and chemical-mechanical polishing (CMP) processes used in standard copper interconnect technology are generally not suitable for TSV fabrication. Therefore, efforts are being made to develop such processes specifically for TSV technology. This paper will describe the development of a void-free Cu electroplating process for TSV filling, along with CMP processing to remove the overburden layer and expose the Cu-filled vias for subsequent metallization. The focus of the paper will be the integration of the TSV plating and CMP processes, with discussion regarding observed integration challenges and their solutions. First, a Cu electroplating process was developed for defect-free, bottom-up filling of silicon vias from 20-200 μm in diameter and 150-375 μm deep, with aspect ratios from 1:1 to 8:1. Next, CMP tests were conducted using Cu-filled silicon vias of 50 μm diameter and 150 μm depth, designed for use in a MEMS wafer-level packaging application. These tests indicated that plating nonuniformity and Cu mound defects over filled vias caused significant CMP process issues. The plating process was then modified to eliminate these problems in the Cu films, resulting in improved CMP uniformity and reduced polishing time.