- Conference Article
- 10.1109/icmmt65948.2025.11188875
Dataset Construction and Analysis of Reverse I-V Characteristics of Terahertz GaAs Schottky Diodes with Varied Physical Parameters
- May 19, 2025
- Zhengyang You + 3 more +3
This paper introduces a physical intrinsic model of terahertz frequency planar Schottky diodes. Using this model, 591 sets of reverse current-voltage (I-V) characteristic data that cover the common physical parameters of GaAs Schottky mixer diodes in the terahertz band were generated and aligned to construct a dataset for deep learning analysis of diode electrical properties. The reverse I-V characteristics of GaAs Schottky Barrier Diodes (SBDs) under different physical parameters were investigated. The results show that the anode diameter, epitaxial layer thickness, and doping concentration of the diodes have different impacts on the reverse I-V characteristics of GaAs Schottky diodes, providing an important reference for the design and optimization of Schottky diodes in terahertz applications.
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