High-order curvature-compensated CMOS bandgap voltage reference

In this paper, a Bandgap reference (BGR) with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is presented. On the basis of first-order temperature-compensated BGR, a complementary curvature-compensation technique (CCCT) is realized by using the saturation region current characteristics of PMOS transistors with proportional to absolute temperature (PTAT) bias voltage. Besides, in addition to the effect of cascode structure and the isolation of the current amplifier, the PSRR of proposed BGR is further improved by adopting self-bias power supply with feedback. The presented BGR is implemented in a standard 0.35 μm BCD process. The post-simulation results show that the TC of the BGR is 4.740 ppm/∘C with a 2.50V average output voltage, and the PSRR is up to -78.5dB.

This paper presents a high wide band power supply rejection ratio (PSRR) current mode bandgap reference (BGR) with a fast startup performance. The BGR includes three main enhancement techniques to improve the PSRR. The proposed design is implemented in 130nm CMOS technology. It only consumes 50μA from a 1.8V supply. The BGR provides 850mV reference voltage and has a power supply rejection ratio (PSRR) of 130dB from DC to 100Hz and more than 110dB till 100MHz. The temperature coefficient (TC) is 10 ppm/°C from -40°C to 125° C. The Bandgap start-up time is 70ns.

The reference voltage is a core part of RFID tags, its performance directly determines the whole chip's life and performance. The temperature coefficient is one of the important performances of the reference voltage source and the high-order temperature compensation is an effective method to reduce the temperature coefficient of the reference source. A low temperature coefficient bandgap reference is designed based on the standard 65nm CMOS process, and the low-supply voltage operation with bandgap reference circuit with current mode structure. The designed CMOS bandgap voltage reference is in the range of -20°C to 100°C with temperature coefficient of 9.6 ppm/°C and provides a good Power Supply Rejection Ratio(PSRR) of 79dB in the low frequency. The results of simulation show that the design improve the performance of the bandgap reference voltage source effectively.

A novel bandgap reference (BGR) with low temperature and supply voltage sensitivity without any resistor, which is compatible with standard CMOS process, is presented in this article. The proposed BGR utilises a differential amplifier with an offset voltage proportional to absolute temperature to compensate the temperature drift of emitter–base voltage. Besides, a self-biased current source with feedback is used to provide the bias current of the BGR core for reducing current mirror errors dependent on supply voltage and temperature further. Verification results of the proposed BGR implemented with 0.35 µm CMOS process demonstrate that a temperature coefficient of 10.2 ppm/°C is realised with temperature ranging from −40°C to 140°C, and a power supply rejection ratio of 58 dB is achieved with a maximum supply current of 27 µA. The active area of the presented BGR is 160 × 140 µm2.

A high precision band-gap reference (BGR) with piecewise-linear compensation is designed in this paper. A low voltage Brokaw BGR architecture is employed to provide low output voltage. A high gain, low power supply rejection ratio (PSRR) operational amplifier is designed to improve the PSRR of the band-gap reference. In order to achieve temperature stability significantly lower than the traditional band-gap reference, a circuit which produces a current with positive temperature coefficient (TC) at high temperatures and 0 current at lower temperatures is designed. The whole BGR circuits are simulated by Spectre based on chartered 0.18μm 1P5M 1.8V CMOS technology. It's clear from simulation result that the TC of the output reference voltage approaches 2.61ppm/K over the military temperature range, the PSRR reaches 107.2dB at low frequency (f=0.1HZ), the whole BGR dissipates 0.4mW. In addition, the output reference voltage changes only 8.6μV when the power supply changes from 1.5V to 2.1V, that is to say, the power regulation ratio is 0.014mV/V.

In this paper, A precision bandgap reference (BGR) with high power supply rejection ratio (PSRR) and low-temperature coefficient (TC) is designed. It comprises a bandgap reference core circuit, a negative feedback loop, a nonlinear temperature compensation circuit, and a bias circuit. The bias circuit is used to increase the PSRR, a negative feedback loop is introduced to maintain the constant output reference voltage, and a nonlinear compensation circuit is used to increase the temperature drift coefficient of the bandgap reference. The voltage supply is 3. 3V. This simulation is based on the SMIC 0.1S$\mu$m CMOS process. The results show that the temperature drift coefficient of the bandgap reference source is 3.255ppm/°C in the temperature range of −40°C~130°C. The PSRR is 103. 192dB at the frequency of 1Hz. The power consumption is 13.1996$\mu$W. The offset voltage is 2.15591mV by Monte Carlo simulation.

A novel band-gap reference circuit is presented in order to reduce the offset voltage and power consumption. By using the op-amp input voltage as part of the reference voltage source, the gain and power supply rejection ratio of the op-amp is increased. The working principle of the Band-gap reference circuit is analyzed, and it is pointed out that the temperature coefficient becomes smaller through using the temperature compensation. The simulation results based on xiyue 0.3um bipolar process show that the circuit has low power dissipation and good temperature characteristic, the power supply rejection ratio is up to 92dB. The correctness of the theoretical analysis is verified by simulation results.

ABSTRACTA bulk-isolated curvature-compensated bandgap voltage reference (BGR) compatible with triple-well CMOS technologies is presented in this paper. Verification results of the proposed BGR implemented in a 0.35-µm 3.3-V triple-well CMOS technology demonstrate that the BGR achieves a reference voltage of 220.4 mV with an average temperature coefficient (TC) of 3.7 ppm/°C in the −40 to 130°C range with 8-bit trimming. The measured current consumption and power supply rejection of the circuit are 33.15 µA and −69.51 dB at 100 Hz, respectively (VDD = 3.3 V). The circuit is capable of operating with supply voltages down to 2 V and its line regulation is 0.16%/V over a voltage range from 2 to 3.6 V. The root mean square output noise voltage in the 0.1–10 Hz frequency range is 2.54 µV. Moreover, measurement results show that the substrate noise sensitivity at the BGR output improved more than 30 dB for frequencies up to 50 kHz, thanks to the employed block bulk isolation strategy, although the effective improvement is expected to be more than 75 dB without the coupling from the electrostatic discharge diode in the I/O pad.

A new sub-1-ppm/°C curvature-compensated bandgap voltage reference (BGR) is presented in this paper. The Complementary to Absolute Temperature (CTAT) voltage component of a forward biased BJT is first well balanced with a Proportional to Absolute Temperature (PTAT) voltage, leaving only a high order logarithmic error with the form of TlnT. This residual non-linear error is corrected by a difference of two CTAT voltages with different non-linear terms through controlling the collector currents of BJTs, which can achieve an ideal non-linear compensation. All the circuits are designed in a standard 0.35-pm CMOS process. The post-simulation results show the proposed BGR achieves temperature coefficient (TC) of 0.7 ppm/°C over temperature range of −40 °C to 125 °C and power supply rejection (PSR) of −104 dB at 3.6 V power supply. The line regulation of the output reference voltage is 0.1 mV/V in the supply range of 24.5 V. The maximum dissipating current from the supply is 25.45 μA.

The design of CMOS bandgap voltage references focusing on high accuracy and low temperature coefficient methodologies is discussed in this paper. Several solutions of total bandgap voltage reference error minimization are considered. As a summary it is proposed bandgap voltage reference with output voltage accuracy 1.2V ± 0.08% in temperature range -40...125°C.

A −184 dB PSRR and 2.47 [formula omitted] noise self biased bandgap reference based on FVF structure

A low dropout (LDO) voltage regulator with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is presented in this paper. Large 1µF off-chip load capacitor is used to achieve the high PSRR. However, this decreases the gain and pushes the LDO’s output pole to lower frequency causing the circuit to become unstable. The proposed LDO uses rail-to-rail folded cascode amplifier to compensate the gain and stability problems. 2nd order curvature characteristic is used in bandgap voltage reference circuit that is applied at the input of the amplifier to minimize the TC. The characteristic is achieved by implementing MOSFET transistors operate in weak and strong inversions. The LDO is designed using 0.18µm CMOS technology and achieves a constant 1.8V output voltage for input voltages from 3.2V to 5V and load current up to a 128mA at temperature between -40°C to 125°C. The proposed LDO is targeted for RF application which has stringent requirement on noise rejection over a broad range of frequency.

Based on the 0.18‐μm BCD process, this paper proposes a novel high‐order bandgap reference. Building on the original concave‐curve bandgap reference, high‐order compensation for the concave‐curve voltage‐mode bandgap reference is realized through β compensation and a piecewise compensation mechanism for source/sink currents. Under a 5‐V supply voltage and an ambient temperature range of −40°C to 125°C, the reference voltage is 1.205 V. The best temperature drift coefficient can reach as low as 0.875 ppm/°C, the power supply rejection ratio is 64.11 dB, the phase margin is 65.6°, the bandwidth can reach 6.2 MHz, and the total power consumption is 60.2 μA. With a power‐on time of 10 μs, the start‐up time of the bandgap reference is only 6.4 μs.

As a way of generating high precision voltage reference, bandgap voltage reference is a very important module in the analog integrated circuits and mixed-signal integrated circuits to provide a temperature and power supply insensitive output voltage. The bandgap voltage reference circuit presented here in this paper is an improved conventional bandgap reference circuit. A self-biasing structure and a current mirror structure are used. It can get the PTAT(Proportional to absolute temperature) current, and then get the voltage that is proportional to temperature. The output voltage of an Op-amp is adopted as the op-amp's offset voltage to make the power consumption lower, and high value polysilicon resistors of low temperature coefficient are used to reduce the impact of resistor drift on the circuit. The errors caused by current mismatch is eliminated in the improved CMOS bandgap, and at the same time the DC PSRR (power supply rejection ratio) is increased because of the increase of the feedback factor.

In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.