Industrial Demands on Process and Device Simulation

A novel two-dimensional (2D) process simulator has been developed which can handle local oxidation, implantation through arbitrary mask edges, nonplanar surfaces, and high concentration diffusion. Through coupling of 2D process and device simulators, the sensitivity of perimeter junction capacitance and breakdown voltage to variations in boron channel-stop implantation dose and local oxidation time has been simulated for a standard NMOS technology. Experimental results using test structures have confirmed the simulations. It is shown that simple power-law dependencies as a function of the process variables give good agreement with the data.

Evaluation of industrial green development based on set pair analysis

This prospective study analyzed industrial physical work demands. The patients (n = 103), sick-listed 8 weeks because of low back pain, were industrial blue-collar workers in the car manufacturing industry. This study described industrial physical work demands in a sample of patients with subacute low back pain (LBP), studied the agreement between reported and observed work postures, estimated compression load on the spine, and determined the predictive validity of industrial physical work demands and occupational LBP handicap. The patients (n = 103), sick-listed 8 weeks because of low back pain, were industrial blue-collar workers in the car manufacturing industry. Industrial physical work demands were reported by the patients and also studied at the work place. The patients' work demands commonly included lifting, forward bending, standing and twisting, working with the hands above the shoulders, and a compression load on the spine of more than 2000 N, and more than 60% of the patients believed that work demands caused their LBP. Substantial or moderate agreement was found more often between the patients' reports and the physical therapists' observations of work postures. None of the studied industrial physical work demands predicted the rate of return to work or the sick-leave during the second follow-up year. The correlations between reported or observed physical work demands, individual physical capacity, individual psychological capacity, spare-time activities, other factors and LBP are not clear. A workplace visit made by a physical therapist may facilitate the rehabilitation process, especially since many patients believed that work factors caused their LBP.

Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref. [1]) and a Omega-FinFET (similar to structures presented in Refs. [2,3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. We also show examples of 3D oxidation simulations with Sentaurus Process.

There is growing interest in the use of advanced reactor systems for powering industrial processes which could significantly help to reduce CO 2 emissions in the global energy system. However, there has been limited consideration into the role nuclear power would play in meeting current and future industry heat demand, especially with respect to the advantages and disadvantages nuclear power offers relative to other competing low-carbon technologies, such as Carbon Capture and Storage (CCS). In this study, the current market needs for high temperature heat are considered based on UK industry requirements and work carried out in other studies regarding how industrial demand could change in the future. How these heat demands could be met via different nuclear reactor systems is also presented. Using this information, it was found that the industrial heat demands for temperature in the range of 500 ∘ C to 1000 ∘ C are relatively low. Whilst High Temperature Gas-cooled Reactors (HTGRs), Very High Temperature Reactors (VHTRs), Gas-cooled Fast Reactors (GFRs) and Molten Salt Reactors (MSRs) have an advantage in terms of capability to achieve higher temperatures (>500 ∘ C), their relative benefit over Liquid Metal-cooled Fast Reactors (LMFRs) and Light Water Reactors (LWRs) is actually smaller than previous studies indicate. This is because, as is shown here, major parts of the heat demand could be served by almost all reactor types. Alternative (non-nuclear) means to meet industrial heat demands and the indirect application of nuclear power, in particular via producing hydrogen, are also considered. As hydrogen is a relatively poor energy carrier, current trends indicate that the use of low-carbon derived hydrogen is likely to be limited to certain applications and there is a focus in this study on the emerging demands for hydrogen.

Part 1 Policy approaches: macro-policies for appropriate technology - a synthesis of findings, Frances Stewart and Gustav Ranis rural linkages and choice of technlogy, Gustav Ranis the effect of policy and policy reforms on non-agricultural enterprises and employment in developing countries - a review of past experiences, Steve Haggblade et al. Part 2 Policies and places: macro-policies and technology choice in the Philippines, Romeo M.Bautista appropriate technology and rural industrial development in Bangladesh - the macro-context, Q.K.Ahmad macro-policies for appropriate technology in Zimbabwean industry, Daniel B.Ndlela impact of economic policies on technological choice and development in Tanzanian industry, S.M.Wangwe and M.S.D.Bagachwa macroeconomic policy, technological change and rural development - the Costa Rica case, Eduardo Doryan-Garron the FUNDA/Momostenango project - a strategy for development promoted by the private sector (the Guatemala case), Roberto Gutierrez. Part 3 Policies and rural industrialization: macro-strategies and rural industrialization in comparative perspective, Ashwani Saith small-scale industrialization, policies and industrial development in rural regions, Francisco Uribe-Echevarria on the dynamism of small and medium industry in Columbia - some possible lessons, Albert Berry et al appropriate technology in publicly owned industries in Kenya and Tanzania, Jeffrey James the impact of macroeconmic policies on small-scale industry - some K.Fitzgerald notes on income distribution, growth and demand, Charles Cooper. (Part Contents)

The development and implementation of the strategy has long been the focus of scientists and practitioners. But, despite the extensive scientific Arsenal, the tasks facing economic managers do not become easier. In many ways, this situation is due to the fact that in the face of growing uncertainty, which is typical for any, both developed and developing markets, it is increasingly difficult to imagine the «image of the future» and formulate the strategy goals to subordinate the company’s activities to the achievement of these very goals. In a sense, the correct formulation of the problem of long-term development can serve as a foresight, which is used to identify factors that can have an impact on the economy and society in the medium and long term. However, what is the connection of foresight with the setting of goals of the strategy of the industrial enterprise and the choice of mechanisms for the implementation of the chosen strategy – these questions require answers, without which the scientific base of strategic management will not be complete. An attempt is made to find an answer to the question of what hinders industrial development under conditions when the scale of technological modernization is not accompanied by a change in the structure of production. The solution to this problem is proposed to be sought in institutional transformations, on the basis of a theoretical understanding of the laws that determine the technological development of modern industry and the application of the methods of the theory of artificial intelligence systems. The proposed approaches of economic and technological development of territories, states, industries and individual industrial enterprises will allow the most effective financing of investment programs for industrial development.

This paper describes advances and remaining challenges in unstructured 3D meshing techniques for both process and device simulations and parallelization of the process simulator FLOOPS. The meshing is performed using a point cloud manager to create points and an unstructured tetrahedral mesher. Distributed parallel techniques are used to parallelize the sparse matrix assembly and solution for 3D process diffusion simulations.

A standard format for transmitting profiles of semiconductor structures between sites and between tools is described. The standard, called the profile interchange format (PIF), is a flexible and hierarchical format, capable of storing descriptions of semiconductor structures such as those produced and used by process and device simulators. It can store detailed descriptions of the geometry, attribute profiles, material properties, and transient behavior of a single structure or a collection of structures. Two equivalent forms of the PIF are proposed to resolve conflicting demands placed on the format by its two primary uses, which are transmitting profiles between sites and local use as a database for process and device simulation. The 'intersite' form of the PIF, which can be viewed as an extension of the electronic design interchange between sites, most importantly, portability. The 'intertool' form of the PIF is, in concept, equivalent in descriptive capabilities to the intersite form, but is intended to accommodate the needs of profile interchange between tools, most importantly, efficient storage and access of data. The PIF in both modes can be extended and modified to accommodate local needs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The role of the science and technology inflows from Japan in Indonesia's industrial technology development

This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

The state of the art in the field of process and device simulation at Harris Semiconductor, universities, and vendors is reviewed. Particular emphasis is on interrelationships between these groups and between the supporters of the simulation tools at Harris and Harris process/device designers. Simulation of one of the advanced processes is discussed in detail to show how important simulation has become to process development and to illustrate many of the points discussed. Availability of the source code to the companies has allowed Harris programmers to make several incremental improvements at user's request in the time needed. Some of these enhancements are also discussed. >

In this paper experiences in use and application of TCAD in fabrication environment of deep sub-/spl mu/m semiconductor devices is given. Thereby we do not limit ourselves to standard process and device simulation but we discuss also the extension to parameter extraction, ESD and SER simulations. The main goal is to show how one can get a benefit from TCAD and what should be the expectation regarding accuracy and capability to predict. The limits of TCAD and the current status of 3D process and device simulation are discussed at the end of the paper.

Combined process modeling and subthreshold device simulation

Industrial symbiosis emergence and network development through reproduction