Comparative Performance Analysis of Different High-Speed Buffer Drivers Using BiCMOS Technology and MVL Logic

Background: Multiple-Valued Logic (MVL) is the non-binary-valued system, in which more than two levels of information content are available, i.e., L>2. In modern technologies, the dual level binary logic circuits have normally been used. However, these suffer from several significant issues such as the interconnection considerations including the parasitics, area and power dissipation. The MVL circuits have been proved to be consisting of reduced circuitry and increased efficiency in terms of higher utilization of the circuit resources through multiple levels of voltage. Innumerable algorithms have been developed for designing such MVL circuits. Extended form is one of the algebraic techniques used in designing these MVL circuits. Voltage mode design has also been employed for constructing various types of MVL circuits. Novelty: This paper proposes a novel MVLTRANS inverter, designed using conventional CMOS and pass transistor logic based MVLPTL inverter. Binary to MVL Converter/Encoder and MVL to binary Decoder/Converter are also presented in the paper. In addition to the proposed decoder circuit, a 4-bit novel MVL Binary decoder circuit is also proposed. Tools Used: All these circuits are designed, implemented and verified using Cadence® Virtuoso tools using 180 nm technology library.

The ultimate usefulness of a number system depends on its implementation. Multiple-valued logic has been implemented in charge-coupled devices (CCD). In this technology, logic values are encoded as charge. For example, prototype four-valued logic devices have been implemented at the University of Twente (Enschede, Holland). Hitachi has implemented a 16-valued memory that stores the equivalent of 10/sup 6/ bits. CCD is more compact than any other VLSI technology. Although it is slower than CMOS (complementary metal oxide semiconductor), it is much faster than the disk and has the potential of replacing the disk. The use of multiple-valued logic in CCD increases its storage capacity significantly. Multiple-valued logic has also been implemented in current-mode CMOS.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

A novel complimentary metal-oxide-semiconductor (CMOS) single-electron transistor (SET) hybrid architecture, named SETMOS, is proposed, which offers Coulomb blockade oscillations and quasi-periodic negative differential resistance effects at much higher current level than the traditional SETs. The Coulomb blockade oscillation characteristics are exploited to realize the multiple valued (MV) literal gate and the periodic negative differential resistance behavior is utilized to implement capacitor-less multiple valued static random access memory (MV SRAM) cell. The SETMOS literal gate is then used to build up other MV logic building blocks, e.g., transmission gate, binary to MV logic encoder, and MV to binary logic decoder. Analytical SET model simulations are employed to verify the functionalities of the proposed MV logic and memory cells for quaternary logic systems. SETMOS MV architectures are found to be much faster and less temperature-sensitive than previously reported hybrid CMOS-SET based MV circuits.

Low-power circuit designs are required for battery-operated devices. A transistor needs to be small enough to be integrated onto a single chip. Therefore, CNTFET technology has been widely used to design nanoscale circuits for energy-efficient integration. Multiple-valued logic is utilised to reduce the circuit complexity by minimizing the interconnections. Compared to binary circuits, MVL circuits are more noise sensitive. As a result, it’s essential to consider noise margin into account when designing sustainable and reliable ternary circuits. The paper proposes a standard ternary inverter and compares noise margin, power consumption, delay, and PDP measurements with existing standard ternary inverters. The proposed STI has a 68.6% higher noise margin than the existing designs and 82%, 80%, and 91% improvements in power consumption, PDP, and delay, respectively, over existing circuits.

We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

Compared to binary logic, the multi-valued logic circuits provide very small chip size, higher speed, and considerably small number of interconnections and simpler realization of logic functions. However, the main drawback of these circuits is the lower noise margin. The noise margin decreases as the radix of multi-valued system increases. Due to the low noise margins, it is necessary to restore or recover the nominal levels of the signal after a certain number of cascaded stages. In this paper a new current mode CMOS restoration circuit is presented and evaluated.

Organic multi-valued logic (MVL) circuits can substantially improve the data processing efficiency in highly advanced wearable electronics. Organic ternary logic circuits can be implemented by utilizing the negative transconductance (NTC) of heterojunction transistors (H-TRs). To achieve high-performance organic ternary logic circuits, the range of NTC in H-TRs must be optimized in advance to ensure the well-defined intermediate logic state in ternary logic inverters (T-inverters). Herein, a simple and efficient strategy, which enables the systematic control of the range and position of NTC in H-TRs is presented. Each thickness of p-/n-type semiconductor in H-TRs is adjusted to control the channel conductivity. Furthermore, asymmetric source/drain (S/D) electrode structure is newly developed for H-TRs, which can adjust the amount of hole and electron injection, independently. Based on the semiconductor thickness variation and asymmetric S/D electrodes, the T-inverter exhibits full-swing operation with three distinguishable logic states, resulting in unprecedentedly high static noise margin (≈48% of the ideal value). Moreover, a flexible T-inverter with an ultrathin polymer dielectric is demonstrated, whose operating voltage is less than 8V. The proposed strategy is fully compatible with the conventional integrated circuit design, which is highly desirable for broad applicability and scalability for various types of T-inverter production.

Objectives: This paper analyses various Complementary MOS (CMOS) based XOR circuits in terms of their output voltage levels at deep subthreshold/low frequency region at 16-nm technology node and finds out the suitable XOR circuit for ultralow-power applications. Methods/Analysis: It also provides the worst case high and low output level for various XOR circuits at supply voltage 130 mV. Findings: In addition, it compares the average power dissipation that is the sum of both dynamic and leakage power dissipation (stand-by power dissipation) of XOR circuits along with the variability analysis of power dissipation in order to find the XOR circuit which is most robust and dissipate the least average power. Novelty/Improvement: Simulation result shows that Power-less XOR circuit is having a good output high and low level in all cases and most promising in terms of robustness and average power dissipation among all the other XOR circuits at deep subthreshold/ low frequency region of operation.

Compared to multi-valued logic (MVL) with conventional 2-state FETs with a single threshold, MVL computing architectures, based on 4-state SWS (Spatial wavefunction switched) and QDG (quantum dot gate)-FETs having multiple thresholds, results in reduced device count, higher clock (CLK) speed, and lower power consumption. We have experimentally shown multi-state characteristics in SWS-FETs as well as QDG-FETs. This paper presents a novel QDG-SWS-FET that: (1) functions as a multi-bit FET for efficient low-power logic, (2) can be configured as a quantum dot (QD) nonvolatile random access memory (NVRAM), and (3) is suitable for in-memory MVL computing architecture that are compatible with sub-7nm technology nodes. A QDG-SWS-FET with the addition of a control gate dielectric layer functions as a NVRAM cell. Furthermore, it is shown that one single SWS-QD-NVRAM cell gives the functionality of a 1-bit NAND. We have developed circuit/device models and performed quantum simulations for novel multi-layer quantum dot/quantum well FETs and NVRAMs. Our simulations have shown 4-states/2-bit output-input transfer characteristics in SWS-CMOS inverters and NAND gates using two Si/SiGe quantum well channels.

This paper describes a novel complementary metal oxide semiconductor (CMOS) bootstrapped driver circuit for driving large resistive capacitive (RC) loads. The proposed bootstrapped driver reduces the leakage as well as process, voltage and temperature (PVT) variations from the boosted nodes with higher switching speed. Very large scale integration (VLSI) designers need boosted output for the logic circuits which are operating in ultra-deep submicron regime under widespread use of low voltage. Proposed CMOS bootstrapped driver circuit is easy in design; built with minimum number of transistors and have high boosting efficiency with sharp output performance. Comparative evaluations with existing bootstrapped driver circuits are reported. Simulation results are derived by HSPICE tool with predictive technology model (PTM) bulk CMOS process fabrication at 32 nm technology node. The ability of large leakage reduction makes this driver superior as compared to active drivers. An average of 96.97% leakage current is saved at nominal ultra-low voltage of 0.15 V. Monte-Carlo analysis indicates that the proposed bootstrapped driver has less sensitivity of PVT variations. The power consumption and delay sensitivities are reduced by 10 × and 4.12 × as compared to conventional circuit.

The quest for efficient technologies beyond the traditional CMOS (Complementary-Metal-Oxide-Semiconductor) technology has led researchers to explore newer technologies like the CNFET(Carbon-Nanotube-Field-Effect-Transistor). CNFETs are being used to design and implement various ternary logic circuits. Multivalued logic (MVL) requires multiple threshold voltages that are possible to obtain using CNFETs by modifying the physical dimensions of their CNTs (Carbon Nano Tubes). The ternary sequential logic circuits like ternary D-latch, D-flipflop, and counters existing in literature have been implemented either using STIs (Standard Ternary Inverters) or successor-predecessor circuits. This paper proposes a new design methodology for a ternary D-flipflop that uses a ternary buffer and two STIs designed using two power supplies. Two hybrid architectures for ternary D-flipflop designs have also been proposed that are implemented using a combination of ternary buffer, STIs and successor-predecessor circuits. Using these ternary D-flipflop designs, ternary 3- trit synchronous and asynchronous counters are designed in this paper. The proposed designs are simulated using HSPICE and a standard Stanford CNFET model. The proposed ternary D-flipflops show an improvement of up to 93.5&#x0025; in power, up to 44.7&#x0025; in delay and up to 94.3&#x0025; in PDP compared to existing designs.

The BiCMOS technology has proven to be an excellent workhorse for telecommunication applications [1]. This is due to its excellent digital and analog capabilities as well as the variety of I/O’s it offers. Consequently, this made the design process, using the BiCMOS technology, a very flexible one. However, lately due to the ever increasing complexity of telecommunication switches, the need has arisen for novel circuits with low on-chip power consumption. This is particularly important in two classes of circuits which conventionally consumed the most power; signal translation circuits, and I/O circuits. Moreover, since the DSP portions of telecommunication chips are usually implemented using CMOS logic, the supply voltages will have to be scaled down for future submicron and deep submicron BiCMOS technologies to maintain a high reliability for the CMOS circuits. Also, many of the recently reported low-voltage-swing driver circuits have a compatibility problem. These circuits range from reduced-swing CMOS [2], and CMOS pseudo-ECL or CMOS 100K ECL [3], [4], to CMOS GTL [5]. While the CMOS reduced-swing transceivers have limited speed, the CMOS true or pseudo ECL are complicated to design and have high power consumption, and the GTL requires different reference and termination voltages. Each of these transceivers as well as the true or pseudo Bipolar ECL or CML transceivers requires a different termination voltage and hence the incompatibility problem arises. This means that signal conversion parts as well as multiple termination and reference voltages would be required in systems using parts with different transceiver types, thus increasing the overall system cost and complexity.

The high speed buffer or cache type of memory hierarchy is a widely used technique to provide an effective memory access speed up in the main memory of a computer system. The paper reviews the potential of extending cache techniques to the control memory level of a computer. A brief introductory review is made of microprogramming and cache techniques before discussing control-store cache applications and the advantages that should be made possible by the use of a hierarchial writeable control-store technique. So far, little quantitative measurement has been made of this type of memory hierarchy, and mention is made of work currently in progress to provide some of the information necessary to design such systems.

Around 1970 Intel discovered it could put 2,000 transistorsor perhaps a few moreon a single NMOS chip. In retrospect, this may be said to mark the beginning of very large-scale integration (VLSI), ...

Scalable nanoelectronics with energy‐efficient logic technology is crucial for next‐generation edge devices. Low‐dimensional semiconductors, such as transition metal dichalcogenides and single‐walled carbon nanotubes (SWCNTs), have tunable properties with reduced short‐channel effects. The unique properties of each material can be utilized owing to the heterogeneous integration of multiple semiconducting channels to form complementary metal‐oxide‐semiconductor (CMOS) logic. However, the integration remains challenging. This study reveals the realization of low static power hetero‐CMOS inverters by the integration of n‐type monolayer MoS2 and p‐type SWCNT networks. The balanced inverter exhibits a large peak gain of ≈67 at a supply voltage of 2 V with the customized design of the wafer‐scale synthetic process and channel integration. An ultralow standby power consumption of ≈5 pW and a practical peak gain of ≈7 at a reduced supply voltage of 0.25 V are achieved. A high noise margin (&gt;70%) validates the circuit's tolerance to external noises and the dynamic analysis of the inverting amplifier in push–pull configuration exhibits a large AC gain. This work paves the way toward the wafer‐scale integration of low‐dimensional materials for low‐power nanoelectronics.